公开(公告)号：US4553239A

公开(公告)日：1985-11-12

申请号：US464889

申请日：1983-02-08

申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

IPC分类号： H01S5/00 ,  G02F3/02 ,  H01S5/028 ,  H01S5/06 ,  H01S5/062 ,  H01S5/12 ,  H01S5/16 ,  H01S3/19

CPC分类号： H01S5/12 ,  G02F3/026 ,  H01S5/0281 ,  H01S5/06 ,  H01S5/0602 ,  H01S5/06213 ,  H01S5/16 ,  H01S5/164

摘要： A distributed feedback semiconductor laser which has periodic corrugations on a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer. In accordance with the present invention, a semiconductor having an energy gap larger than that of light emitting layer is formed so as to be extended from a current injection region. The semiconductor is formed uniformly and sufficiently distributed in the current injection region.

摘要翻译： 一种分布式反馈半导体激光器，其在光的行进方向上的发光层或相邻层上具有周期性波纹，并且通过将电流注入发光层来执行激光振荡。 根据本发明，形成具有比发光层的能隙大的能隙的半导体，以从电流注入区域延伸。 半导体在电流注入区域中形成均匀且充分分布。

公开(公告)号：US4506367A

公开(公告)日：1985-03-19

申请号：US433085

申请日：1982-10-06

申请人： Shigeyuki Akiba ,  Kazuo Sakai ,  Katsuyuki Utaka ,  Yuichi Matsushima

发明人： Shigeyuki Akiba ,  Kazuo Sakai ,  Katsuyuki Utaka ,  Yuichi Matsushima

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S3/19

CPC分类号： H01S5/12 ,  H01S5/10 ,  H01S5/1082

摘要： A distributed feedback semiconductor laser which is characterized in that periodic corrugations are performed in the surface of an InGaAsP quaternary layer so that an InP layer is grown thereon so as to overcome difficulties in prior arts.

摘要翻译： 一种分布式反馈半导体激光器，其特征在于在InGaAsP四元层的表面进行周期性波纹，使得InP层在其上生长，以克服现有技术中的困难。

公开(公告)号：US4340966A

公开(公告)日：1982-07-20

申请号：US122171

申请日：1980-02-19

申请人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

发明人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

IPC分类号： H01L21/208 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/3235 ,  H01S5/32391

摘要： A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

摘要翻译： 在InP衬底上形成的具有包含多个In1-xGax'AsyP1-y（0.42y≤x≤0.5y，0≤y≤1）的异质结构的半导体激光器，它们是 与InP晶格匹配，其中包含在层中并且具有大于0.6eV但小于0.9eV的禁带宽的发光层在InP衬底上夹在两个InP层之间，其中存在 设置在发光层和在其上生长的至少一个具有比发光层的禁带宽度大的禁带宽度的缓冲层，但小于InP的禁带宽度的InP层。 缓冲层在室温下的禁带宽度可能大于0.8eV但小于1.0eV。