摘要:
A method is described for producing a structured metal layer used, for example, as an antenna for RF ID tags. The structured metal layer is electrodeposited on a cathode, on the surface of which conducting and non-conducting regions are defined. Applied to the deposited metal layer in a residual volume is an adhesive with which the structured metal layer can be made to adhere firmly on a carrier layer.
摘要:
The circuit element has a first layer composed of an electrically insulating substrate material and a first electrically conductive material which is in the form of at least one discrete area such that it is embedded in the substrate material and/or is applied to the substrate material. Furthermore, it has a second layer having a second electrically conductive material, and a monomolecular layer composed of redox-active bispyridinium molecules, which is arranged between the first layer and the second layer. The bispyridinium molecules are immobilized on the electrically conductive material which is in the form of at least one discrete area, and make electrical contact with the second electrical material of the second layer. Furthermore, electrically inert molecules are immobilized on the first layer, which molecules form a matrix which surrounds the at least one discrete area with the monomolecular layer composed of bispyridinium molecules.
摘要:
A supply voltage is needed in conventional electronic circuits used for processing signals, such as counting pulses. The supply voltage supplies the logic circuit components. Especially apparatuses which have to be operated over a longer period of time or/and in remote sites of use and are dependent upon a supply voltage are impaired with the dependency-related disadvantages, such as the necessity of expensive EEPROMs or significantly increased maintenance expenditure. The present invention relates to an electronic circuit which is provided with an input (5) for inputting at least one information signal, an energy means (2) for converting the energy that is present in the at least one information signal into a supply voltage, a control means (3) for generating at least one switch-on control signal when the information signal is input and a signal processing means (4) for storing information which is represented by the at least one information signal and/or for evaluating information which is represented by the at least one information signal and for storing the secondary information which is obtained by the evaluation. At least one ferroelectric flipflop (26) is used. The signal processing means (4) can be activated by the at least one switch-on control signal for evaluating and/or storing purposes. The at least one information signal can be or is the only energy source for the electronic circuit (1) during the evaluation and/or storing process.
摘要:
As a consequence of DRAM memory cell miniaturization, the available space for read/write amplifiers decreases in width from hitherto 4 bit line grids to 2 bit lines grids. Conventionally previously known read/write amplifiers cannot be accommodated on this reduced, still available space. Therefore, it has not been possible hitherto to provide read/write amplifiers arranged beside one another which would manage with the novel DRAM memory cell spacings. The principle underlying the invention is based on replacing at least some of the transistors of conventional design which are usually used for read/write circuits by “vertical transistors” in which the differently doped regions are arranged one above the other or practically one above the other. Compared with the use of conventional transistors, the use of vertical transistors saves enough space to ensure an arrangement of a read/write circuit in the grid even with a reduced grid width.
摘要:
A read/write memory includes a monolithically integrated self-test device which iteratively enables a defect test with a redundancy analysis, without significant external test aids. The test is achieved essentially by virtue of the fact that word lines to be repaired are stored and excluded from further examinations and in each case the line having the most defects not previously detected is always determined and examined first, until either the number of repair lines no longer suffices or no more defects occur. An associated test method is also provided.
摘要:
A description is given of a sense amplifier subcircuit (10), for example an N latch section or a P latch section, for a DRAM memory for amplifying voltage signals read from a bit line (50), having at least two evaluation transistors (20; 30), the gate (21) of one evaluation transistor (20) being connected or connectable to at least one bit line (50) and the gate (31) of another evaluation transistor (30) being connected or connectable to at least one reference bit line (51) and the drains (23, 33) of the evaluation transistors (20; 30) being connected or connectable to the bit lines (51, 50) and the sources (22, 32) of the evaluation transistors (20; 30) being connected or connectable to a (NCS/PCS) lead (11).
摘要:
A DRAM memory (50) having a number of DRAM memory cells (51) is described, the memory cells (51) in each case having a storage capacitor (52) and a selection transistor (12) which are formed in the area of an at least essentially rectangular cell area (59), the cell areas (59) having a greater extent in the longitudinal direction (L) than in the width direction (B) and which are wired or can be wired to the cell periphery via a word line (56, 57) and a bit line (55). The word lines (56, 57) and the bit line (55) are conducted over the memory cells (51) and are at least essentially oriented perpendicularly to one another. To achieve, with increasing miniaturization of the DRAM memory patterns, during the transition from so-called “folded” bit line architectures to so-called “open” bit line architectures that the bit line grid, and thus also the grid of corresponding read/write amplifiers, varies linearly in scale with the longitudinal extent (L) of the memory cells (51), it is provided according to the invention that the bit lines (55) are now oriented perpendicularly to the longitudinal extent (L) of the memory cells (51) in the direction of the lateral extent (B) of the memory cells (51)
摘要:
An electronic device includes an acceleration-sensitive sensor, an electronic circuit arrangement for analyzing the output signal from the sensor, an ignition output element, an ignition element, and a safety device for the vehicle's occupants. To test the operating readiness of the ignition element, an oscillator circuit is also provided, which applies an output signal to the ignition element. The resulting voltage drop obtained across the ignition element is compared by means of a window comparator to threshold values.
摘要:
A positioning device for a rubber-blanket cylinder which is supported in double-excentric bearing rings allows a positional adjustment of the rubber-blanket cylinder relative to a plate cylinder and a printing substrate supported on an impression cylinder. The plate cylinder and the impression cylinder have stationary axes of rotation relative to the frame of the printing unit. A printing gap is adjusted by the positioning device to varying printing substrate thickness, and in one terminal position, the rubber-blanket cylinder is fully disengaged from the other cylinders. The rubber-blanket cylinder is shifted along a positioning path with one segment following an arc of a circle which is concentric with the plate cylinder. The parameters of the bearing and the adjusting devices are defined such that the positioning path is traversed while the respective inner and outer bearing rings rotate continuously.