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44 条记录 (耗时 0.027 秒)

    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same
    4.
    发明申请
    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same 有权
    具有由有机材料制成的栅极电介质的薄膜场效应晶体管及其制造方法

    公开(公告)号：US20050260803A1

    公开(公告)日：2005-11-24

    申请号：US11134512

    申请日：2005-05-23

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

    IPC分类号： H01L21/283 ,  H01L21/336 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

    CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

    摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

    摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same
    5.
    发明申请
    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same 有权
    具有至少一个有机半导体层的半导体部件及其制造方法

    公开(公告)号：US20050196972A1

    公开(公告)日：2005-09-08

    申请号：US11066732

    申请日：2005-02-25

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang

    IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L51/30

    CPC分类号： H01L51/107 ,  H01L51/0545

    摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

    摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。

    Method for producing a mask arrangement and use of the mask arrangement
    7.
    发明申请
    Method for producing a mask arrangement and use of the mask arrangement 审中-公开
    用于制造掩模装置的方法和所述掩模装置的使用

    公开(公告)号：US20060183029A1

    公开(公告)日：2006-08-17

    申请号：US11346572

    申请日：2006-02-03

    申请人： Hagen Klauk ,  Florian Eder ,  Marcus Halik ,  Dirk Rohde ,  Gunter Schmid

    发明人： Hagen Klauk ,  Florian Eder ,  Marcus Halik ,  Dirk Rohde ,  Gunter Schmid

    IPC分类号： G03C5/00 ,  G03F1/00

    CPC分类号： H01L51/0011 ,  H01L27/283 ,  H01L51/0003 ,  H01L51/0512

    摘要： A method is provided for producing a mask arrangement that is used for additive forming of organic semiconductor material regions on a substrate. The mask arrangement is formed by applying a photocrosslinkable polymer material to a mask carrier region, exposing it in a controlled and selective and thereby patterned manner and subsequently developing it. The developing process facilitates the removal of polymer material regions that are not exposed, and have not been photocrosslinked, from surface regions of the mask carrier region such that the desired mask arrangement is produced.

    摘要翻译： 提供了一种制造用于在基板上添加形成有机半导体材料区域的掩模布置的方法。 通过将光可交联聚合物材料施加到掩模载体区域，以受控和选择性的方式将其曝光以形成掩模布置并随后显影。 显影方法有助于从掩模载体区域的表面区域除去未被曝光并且未被光致交联的聚合物材料区域，使得产生所需的掩模装置。

    Semiconductor memory device and method for fabricating a semiconductor memory device
    9.
    发明申请
    Semiconductor memory device and method for fabricating a semiconductor memory device 审中-公开
    半导体存储器件及半导体存储器件的制造方法

    公开(公告)号：US20060249769A1

    公开(公告)日：2006-11-09

    申请号：US11361648

    申请日：2006-02-24

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid

    IPC分类号： H01L29/94

    CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/11502 ,  H01L28/55

    摘要： A semiconductor memory device and method for fabricating a semiconductor memory device is disclosed. In one embodiment, the semiconductor memory device using at least one ferroelectric layer which has at least one electrically non-conductive polymer and ferroelectric nanoparticles distributed in the polymer. In another embodiment, the present invention provides a method for fabricating a semiconductor memory device using at least one ferroelectric layer. It is thus possible to fabricate a semiconductor memory device using at least one ferroelectric layer on inexpensive and, if appropriate, flexible substrates.

    摘要翻译： 公开了一种用于制造半导体存储器件的半导体存储器件和方法。 在一个实施例中，使用至少一个铁电层的半导体存储器件，该铁电层具有分布在聚合物中的至少一种非导电聚合物和铁电纳米粒子。 在另一个实施例中，本发明提供一种制造使用至少一个铁电层的半导体存储器件的方法。 因此，可以在廉价且适当的柔性基板上使用至少一个铁电层来制造半导体存储器件。