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公开(公告)号：US20130234088A1
公开(公告)日：2013-09-12
申请号：US13728552
申请日：2012-12-27
IPC分类号： H01L45/00
CPC分类号： H01L45/14 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/16
摘要： According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.
摘要翻译： 根据实施例，半导体器件包括第一和第二忆阻器。 第一忆阻器包括由第一材料制成的第一电极，由第二材料制成的第二电极和布置在第一和第二电极之间的第一电阻切换膜。 第一电阻开关膜连接到第一和第二电极。 第二忆阻器包括由第三材料制成的第三电极，由第二材料制成的第四电极和布置在第三和第四电极之间的第二电阻切换膜。 第二电阻开关膜连接到第三和第四电极。 第一材料的功函数小于第二材料的功函数。 第三种材料的功函数大于第二种材料的功函数。
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公开(公告)号：US07646072B2
公开(公告)日：2010-01-12
申请号：US12320280
申请日：2009-01-22
IPC分类号： H01L29/78
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
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公开(公告)号：US20090242970A1
公开(公告)日：2009-10-01
申请号：US12388810
申请日：2009-02-19
申请人： Tatsuo SHIMIZU , Masato Koyama
发明人： Tatsuo SHIMIZU , Masato Koyama
IPC分类号： H01L29/792 , H01G4/06 , H01L29/40 , H01L29/78
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/28282 , H01L28/56 , H01L28/75 , H01L29/517 , H01L29/66833 , H01L29/7833 , H01L29/7881 , H01L29/792
摘要： It is made possible to provide a semiconductor device that has the effective work function of the connected metal optimized at the interface between a semiconductor and the metal. A semiconductor device includes: a semiconductor film; an oxide film formed on the semiconductor film, the oxide film including at least one of Hf and Zr, and at least one element selected from the group consisting of V, Cr, Mn, Nb, Mo, Tc, W, and Re being added to the oxide film; and a metal film formed on the oxide film.
摘要翻译： 可以提供一种具有在半导体和金属之间的界面处优化的连接金属的有效功函数的半导体器件。 半导体器件包括：半导体膜; 形成在半导体膜上的氧化物膜，包括Hf和Zr中的至少一种的氧化物膜和选自V，Cr，Mn，Nb，Mo，Tc，W和Re中的至少一种元素被添加 到氧化膜; 和形成在氧化物膜上的金属膜。
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公开(公告)号：US20090200616A1
公开(公告)日：2009-08-13
申请号：US12370641
申请日：2009-02-13
申请人： Tatsuo Shimizu , Masato Koyama
发明人： Tatsuo Shimizu , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L21/823857 , H01L21/823821 , H01L21/823842 , H01L27/1203 , H01L29/785
摘要： According to one embodiment, it is possible to provide a semiconductor device provided with an MIS transistor which has an effective work function being, as much as possible, suitable for low threshold operation. A CMIS device provided with an electrode having an optimal effective work function and enabling low threshold operation to achieve by producing an in-gap level by the addition of a high valence metal in an Hf (or Zr) oxide and changing a position of the in-gap level by nitrogen or fluorine or the like has been realized.
摘要翻译： 根据一个实施例，可以提供一种设置有MIS晶体管的半导体器件，该半导体器件具有尽可能多的适合于低阈值操作的有效功函数。 具有电极的CMIS器件具有最佳的有效功函数，并且能够通过在Hf（或Zr）氧化物中添加高价金属而产生空隙间电平来实现低阈值操作，从而改变位于 通过氮或氟等的差异水平已经实现。
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公开(公告)号：US07498643B2
公开(公告)日：2009-03-03
申请号：US11373140
申请日：2006-03-13
IPC分类号： H01L29/76
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
摘要翻译： 可以尽可能地防止装置特性的劣化。 半导体器件包括：半导体衬底; 栅极绝缘膜，设置在所述半导体衬底的上方并且含有金属，氧和添加元素; 设置在所述栅极绝缘膜上方的栅电极; 以及设置在栅电极两侧的半导体衬底中的源/漏区。 添加元素是选自浓度为0.003原子％以上且3原子％以下的第5,6,15和16族元素中的至少一种元素。
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公开(公告)号：US20070034902A1
公开(公告)日：2007-02-15
申请号：US11373140
申请日：2006-03-13
IPC分类号： H01L31/00
CPC分类号： H01L27/11521 , H01L21/28194 , H01L21/28202 , H01L29/4933 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
摘要翻译： 可以尽可能地防止器件特性的劣化。 半导体器件包括：半导体衬底; 栅极绝缘膜，设置在所述半导体衬底的上方并且含有金属，氧和添加元素; 设置在所述栅极绝缘膜上方的栅电极; 以及设置在栅电极两侧的半导体衬底中的源/漏区。 添加元素是选自浓度为0.003原子％以上且3原子％以下的第5,6,15和16族元素中的至少一种元素。
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公开(公告)号：US07122470B2
公开(公告)日：2006-10-17
申请号：US11340549
申请日：2006-01-27
申请人： Masato Koyama , Akira Nishiyama
发明人： Masato Koyama , Akira Nishiyama
IPC分类号： H01L21/44
CPC分类号： H01L21/28088 , H01L21/823835 , H01L21/823842 , H01L29/4966 , H01L29/665
摘要： A semiconductor device having a gate electrode free from increasing of resistance of the gate electrode, from decreasing of capacitance of the insulation film due to depletion, and from penetrating of impurity. The semiconductor device includes a silicon layer, a gate insulating film formed on the silicon layer, a metal boron compound layer formed on the gate insulating film, and a gate electrode formed on the metal boron compound layer and containing at least silicon.
摘要翻译： 一种半导体器件，具有不增加栅极电阻的栅电极，由于耗尽而导致的绝缘膜电容的减小和杂质渗透。 半导体器件包括硅层，形成在硅层上的栅极绝缘膜，形成在栅极绝缘膜上的金属硼化合物层，以及形成在金属硼化合物层上并至少含有硅的栅电极。
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公开(公告)号：US20060186488A1
公开(公告)日：2006-08-24
申请号：US11407066
申请日：2006-04-20
申请人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
发明人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/517 , H01L29/518
摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键 ，以及形成在绝缘膜上方的电极。
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公开(公告)号：US20060027879A1
公开(公告)日：2006-02-09
申请号：US11244295
申请日：2005-10-06
IPC分类号： H01L29/76
CPC分类号： H01L21/823814 , H01L21/28097 , H01L21/823835 , H01L29/4975 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.
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公开(公告)号：US06982467B2
公开(公告)日：2006-01-03
申请号：US10863204
申请日：2004-06-09
IPC分类号： H01L29/76
CPC分类号： H01L21/823814 , H01L21/28097 , H01L21/823835 , H01L29/4975 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.
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