公开(公告)号：US20150072470A1

公开(公告)日：2015-03-12

申请号：US14540184

申请日：2014-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Miyuki HOSOBA ,  Kosei NODA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Junichiro SAKATA

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/7869

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

Abstract translation: 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层 减少了

公开(公告)号：US20150050775A1

公开(公告)日：2015-02-19

申请号：US14529525

申请日：2014-10-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryosuke WATANABE ,  Suzunosuke HIRAISHI ,  Junichiro SAKATA

IPC: H01L21/477 ,  H01L29/66

CPC classification number: H01L21/477 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.

Abstract translation: 目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。 在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。 此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。 包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。

公开(公告)号：US20150044818A1

公开(公告)日：2015-02-12

申请号：US14521710

申请日：2014-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Shuhei YOSHITOMI ,  Takahiro TSUJI ,  Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroyuki TOMATSU ,  Masahiko HAYAKAWA

IPC: H01L27/12 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

Abstract translation: 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

公开(公告)号：US20150011049A1

公开(公告)日：2015-01-08

申请号：US14328060

申请日：2014-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Hiroki OHARA ,  Junichiro SAKATA

IPC: H01L29/66 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02565 ,  H01L21/30604 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.

Abstract translation: 目的在于提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体装置。 此外，另一个目的是以高生产率以低成本制造高度可靠的半导体器件。 在包括具有作为沟道形成区域的氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，在氮气气氛下加热氧化物半导体层以降低其电阻，从而形成低电阻氧化物半导体层。 此外，选择性地增加与栅电极层重叠的低电阻氧化物半导体层的区域的电阻，从而形成高电阻氧化物半导体层。 通过溅射法形成与氧化物半导体层接触的氧化硅膜，可提高氧化物半导体层的电阻。

公开(公告)号：US20140319520A1

公开(公告)日：2014-10-30

申请号：US14331460

申请日：2014-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takashi SHIMAZU ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

IPC: H01L29/16 ,  H01L29/786

CPC classification number: H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

Abstract translation: 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氧氮化物膜的氧化物半导体层形成。

公开(公告)号：US20140291675A1

公开(公告)日：2014-10-02

申请号：US14305156

申请日：2014-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

Abstract translation: 本发明的目的是提供一种包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括半导体层为氧化物半导体层的反交错薄膜晶体管的半导体器件中，在氧化物半导体层上设置有缓冲层。 缓冲层与半导体层的沟道形成区域和源极和漏极电极层接触。 缓冲层的膜具有电阻分布。 设置在半导体层的沟道形成区域上的区域具有比半导体层的沟道形成区域更低的导电性，并且与源极和漏极电极层接触的区域具有比半导体的沟道形成区域更高的导电性 层。

公开(公告)号：US20140209902A1

公开(公告)日：2014-07-31

申请号：US14230731

申请日：2014-03-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

Abstract: An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.

Abstract translation: 目的是降低半导体器件的制造成本。 目的是提高半导体器件的开口率。 目的是使半导体器件的显示部分显示更高清晰度的图像。 目的在于提供一种可以高速运转的半导体装置。 该半导体器件包括一个基板上的驱动电路部分和显示部分。 驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。 显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。

公开(公告)号：US20140197406A1

公开(公告)日：2014-07-17

申请号：US14217887

申请日：2014-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract translation: 本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。 在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层， 使用金属材料形成。 因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。

公开(公告)号：US20130285052A1

公开(公告)日：2013-10-31

申请号：US13926276

申请日：2013-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takashi SHIMAZU ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.

Abstract translation: 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氧氮化物膜的氧化物半导体层形成。

公开(公告)号：US20130153910A1

公开(公告)日：2013-06-20

申请号：US13770120

申请日：2013-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract translation: 本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。 在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层， 使用金属材料形成。 因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。