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    Memory element and memory apparatus
    81.
    发明授权
    Memory element and memory apparatus 有权
    存储器元件和存储器件

    公开(公告)号：US08637947B2

    公开(公告)日：2014-01-28

    申请号：US13684644

    申请日：2012-11-26

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC: H01L29/82 ,  G11C11/02

    CPC classification number: H01L29/82 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

    Abstract translation: 存储元件包括分层结构和负热膨胀材料层。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于胶片面的磁化，其中磁化方向根据信息而改变，并且包括具有正的磁致伸缩常数的磁性层。 通过在分层结构的层叠方向上施加电流来将信息记录在存储层中来改变磁化方向。 磁化固定层具有垂直于成为存储在存储层中的信息的基础的膜面的磁化。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。

    ROUTER AND METHOD OF SUPPLYING POWER TO MEMORY UNIT IN THE SAME
    82.
    发明申请
    ROUTER AND METHOD OF SUPPLYING POWER TO MEMORY UNIT IN THE SAME 有权
    向其中的存储单元供电的路由器和方法

    公开(公告)号：US20130235872A1

    公开(公告)日：2013-09-12

    申请号：US13779139

    申请日：2013-02-27

    Applicant: SONY CORPORATION

    Inventor： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H04L12/56

    CPC classification number: H04L45/742 ,  H04L45/60 ,  H04L49/25

    Abstract: A router, includes: a routing table memory unit configured to store a routing table and be capable of reading and writing the routing table at any time, the routing table being destination information of a packet; a search engine unit which has a transfer information base memory unit and which is configured to search for a destination of the packet based on a transfer information base; a power supply unit configured to supply power to the routing table memory unit and the transfer information base memory unit; and a control unit configured to control the power supply unit such that the power is supplied to the non-volatile memory when the non-volatile memory is operated, and the power supply is interrupted when the non-volatile memory is not operated.

    Abstract translation: 路由器包括：路由表存储单元，被配置为存储路由表，并且能够随时读取和写入路由表，路由表是分组的目的地信息; 搜索引擎单元，其具有传送信息库存储单元，其被配置为基于传送信息库来搜索分组的目的地; 电源单元，被配置为向所述路由表存储单元和所述传送信息库存储单元供电; 以及控制单元，被配置为控制所述电源单元，使得当所述非易失性存储器被操作时，所述电力被提供给所述非易失性存储器，并且当所述非易失性存储器未被操作时所述电源被中断。

    MEMORY ELEMENT AND MEMORY APPARATUS
    83.
    发明申请
    MEMORY ELEMENT AND MEMORY APPARATUS 有权
    记忆元素和记忆装置

    公开(公告)号：US20130163314A1

    公开(公告)日：2013-06-27

    申请号：US13675328

    申请日：2012-11-13

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC: G11C11/16

    CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer, and includes an anti-ferromagnetic oxide layer formed on any of the at least two ferromagnetic layers. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

    Abstract translation: 存储元件包括分层结构。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于膜面的磁化，其中磁化方向根据信息而改变，并且通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储器中 层。 磁化固定层具有垂直于成为存储在存储层中的信息的基底的膜面的磁化，具有包括至少两个铁磁层和非磁性层的叠层铁钉结构， 形成在所述至少两个铁磁层中的任一个上的铁磁性氧化物层。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。

    MEMORY ELEMENT AND MEMORY APPARATUS
    84.
    发明申请
    MEMORY ELEMENT AND MEMORY APPARATUS 有权
    记忆元素和记忆装置

    公开(公告)号：US20130134532A1

    公开(公告)日：2013-05-30

    申请号：US13675789

    申请日：2012-11-13

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L29/82

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

    Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。

    STORAGE ELEMENT AND MEMORY
    86.
    发明申请
    STORAGE ELEMENT AND MEMORY 有权

    公开(公告)号：US20220238797A1

    公开(公告)日：2022-07-28

    申请号：US17717362

    申请日：2022-04-11

    Applicant: SONY CORPORATION

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

    Memory element and memory device
    88.
    发明授权
    Memory element and memory device 有权

    公开(公告)号：US10937955B2

    公开(公告)日：2021-03-02

    申请号：US16853157

    申请日：2020-04-20

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02

    Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Storage element and storage apparatus
    89.
    发明授权
    Storage element and storage apparatus 有权

    公开(公告)号：US10580471B2

    公开(公告)日：2020-03-03

    申请号：US16408840

    申请日：2019-05-10

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C11/16 ,  H01F10/32 ,  G11C11/155 ,  H01L43/08 ,  H01L27/22 ,  G11B5/39 ,  H01L43/02 ,  G11C11/15

    Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

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