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    DISPLAY DEVICE AND ELECTRONIC DEVICE
    81.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20250120277A1

    公开(公告)日：2025-04-10

    申请号：US18985487

    申请日：2024-12-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takashi NAKAGAWA ,  Hidetomo KOBAYASHI ,  Hideaki SHISHIDO

    IPC: G09G3/3233 ,  G09G3/32

    Abstract: A display device with high luminance is provided. A pixel includes a light-emitting device, a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, and a second capacitor. One electrode of the light-emitting device is electrically connected to one of a source and a drain of the first transistor. A gate of the first transistor is electrically connected to one electrode of the first capacitor and one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is electrically connected to one electrode of the second capacitor. One electrode of the second capacitor is electrically connected to a first wiring having a function of supplying a first potential. The other electrode of the second capacitor is electrically connected to the other electrode of the first capacitor, one of a source and a drain of the third transistor, and one of a source and a drain of the fourth transistor.

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    83.
    发明公开
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开

    公开(公告)号：US20230369344A1

    公开(公告)日：2023-11-16

    申请号：US18140797

    申请日：2023-04-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Koji KUSUNOKI ,  Susumu KAWASHIMA ,  Hideaki SHISHIDO ,  Tomoaki ATSUMI ,  Motoharu SAITO

    IPC: H01L27/12 ,  G09G3/3233

    CPC classification number: H01L27/1237 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2310/08

    Abstract: A semiconductor device including a first transistor, a second transistor, and an insulating layer is provided. The first transistor includes a first semiconductor layer and a first conductive layer. The second transistor includes a second semiconductor layer and a second conductive layer. The insulating layer includes a first side surface over the first conductive layer and a second side surface over the second conductive layer. A gate insulating layer includes a portion facing the first side surface with the first semiconductor layer therebetween and a portion facing the second side surface with the second semiconductor layer therebetween. A gate electrode includes a portion facing the first side surface with the gate insulating layer and the first semiconductor layer therebetween and a portion facing the second side surface with the gate insulating layer and the second semiconductor layer therebetween. The first semiconductor layer is electrically connected to the second semiconductor layer.

    Display Apparatus and Electronic Device
    84.
    发明申请
    Display Apparatus and Electronic Device 有权

    公开(公告)号：US20220416008A1

    公开(公告)日：2022-12-29

    申请号：US17787654

    申请日：2020-12-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeya HIROSE ,  Hideaki SHISHIDO

    IPC: H01L27/32

    Abstract: A display apparatus with high display quality is provided. A high-resolution display apparatus is provided. The display apparatus includes a plurality of pixels, and the pixels each include a light-emitting device, a first transistor, a second transistor, a third transistor, a fourth transistor, and a first capacitor. One electrode of the light-emitting device is electrically connected to one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, and one electrode of the first capacitor. A gate of the second transistor is electrically connected to the other electrode of the first capacitor, one of a source and a drain of the third transistor, and one of a source and a drain of the fourth transistor. One frame period of each of the pixels includes a period in which the first transistor and the fourth transistor are each in a conduction state.

    DISPLAY DEVICE
    85.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20220230573A1

    公开(公告)日：2022-07-21

    申请号：US17609497

    申请日：2020-04-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Takashi NAKAGAWA ,  Takayuki IKEDA ,  Hidetomo KOBAYASHI ,  Hideaki SHISHIDO ,  Shuichi KATSUI ,  Kiyotaka KIMURA

    IPC: G09G3/20

    Abstract: A display device with a narrower frame can be provided. In the display device, a first layer, a second layer, and a third layer are provided to be stacked. The first layer includes a gate driver circuit and a data driver circuit, the second layer includes a demultiplexer circuit, and the third layer includes a display portion. In the display portion, pixels are arranged in a matrix, an input terminal of the demultiplexer circuit is electrically connected to the data driver circuit, and an output terminal of the demultiplexer circuit is electrically connected to some of the pixels. The gate driver circuit and the data driver circuit are provided to include a region overlapping some of the pixels. The gate driver circuit and the data driver circuit have a region where they are not strictly separated from each other and overlap each other. Five or more gate driver circuits and five or more data driver circuits can be provided.

    NEURAL NETWORK, POWER STORAGE SYSTEM, VEHICLE, AND ELECTRONIC DEVICE
    86.
    发明申请
    NEURAL NETWORK, POWER STORAGE SYSTEM, VEHICLE, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20210288357A1

    公开(公告)日：2021-09-16

    申请号：US16603487

    申请日：2018-04-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kazutaka KURIKI ,  Ryota TAJIMA ,  Kouhei TOYOTAKA ,  Hideaki SHISHIDO ,  Toshiyuki ISA

    IPC: H01M10/48 ,  H01M10/44 ,  G06N3/04 ,  G06N3/063 ,  H02J7/00

    Abstract: A power storage system with excellent characteristics is provided. A power storage system with a high degree of safety is provided. A power storage system with less deterioration is provided. A storage battery with excellent characteristics is provided. The power storage system includes a neural network and a storage battery. The neural network includes an input layer, an output layer, and one or more hidden layers between the input layer and the output layer. The predetermined hidden layer is connected to the previous hidden layer or the previous input layer by a predetermined weight coefficient, and connected to the next hidden layer or the next output layer by a predetermined weight coefficient. In the storage battery, voltage and time at which the voltage is obtained are measured as one of sets of data. The sets of data measured at different times are input to the input layer and the operational condition of the storage battery is changed in accordance with a signal output from the output layer.

    SEMICONDUCTOR DEVICE
    87.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200321362A1

    公开(公告)日：2020-10-08

    申请号：US16910196

    申请日：2020-06-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

    IPC: H01L27/12 ,  H01L29/786

    Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

    SEMICONDUCTOR DEVICE, BATTERY UNIT, AND BATTERY MODULE
    88.
    发明申请
    SEMICONDUCTOR DEVICE, BATTERY UNIT, AND BATTERY MODULE 审中-公开

    公开(公告)号：US20200295413A1

    公开(公告)日：2020-09-17

    申请号：US16640233

    申请日：2018-08-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Ryota TAJIMA ,  Hideaki SHISHIDO ,  Kensuke YOSHIZUMI

    IPC: H01M10/48 ,  H01Q1/38 ,  H01Q1/22 ,  H01M2/10 ,  G01R31/382 ,  G01R31/371 ,  G01K1/14 ,  G06N3/04

    Abstract: A semiconductor device capable of monitoring the state of a battery or the like is provided. The states of a plurality of batteries in a battery module is easily acquired. The semiconductor device that can be attached to an electrode of a battery or the like includes a first substrate, an element layer, and first to third conductive layers. The element layer includes a first circuit and a second circuit and is provided on a side of a first surface of the first substrate. The first conductive layer and the second conductive layer are provided on a side of a second surface positioned opposite to the first surface of the first substrate. The first circuit is electrically connected to each of the first conductive layer and the second conductive layer through an opening provided in the first substrate. The third conductive layer is provided to be stacked on a side opposite to the first substrate side of the element layer and electrically connected to the second circuit. The first conductive layer and the second conductive layer each function as a terminal, and the third conductive layer functions as an antenna.

    SEMICONDUCTOR DEVICE
    90.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190165003A1

    公开(公告)日：2019-05-30

    申请号：US16248978

    申请日：2019-01-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

    Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

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