公开(公告)号：US06897502B2

公开(公告)日：2005-05-24

申请号：US10620698

申请日：2003-07-17

申请人： Shinichi Watanabe ,  Toyota Morimoto ,  Tohru Ozaki ,  Haruhiko Koyama

发明人： Shinichi Watanabe ,  Toyota Morimoto ,  Tohru Ozaki ,  Haruhiko Koyama

IPC分类号： H01L27/105 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A first impurity diffusion area is formed in the semiconductor substrate at a bottom of the first trench formed in a surface of the semiconductor substrate. A second impurity diffusion area is formed in the surface of the semiconductor substrate, each have one end contacting a first side wall of the first trench, and each have the same conductive type as the first impurity diffusion area. A first gate electrode is provided on the first side wall between the first and second impurity diffusion areas with a gate insulating film interposed therebetween. A first ferroelectric film is provided on a first lower electrode, which is provided on the second impurity area. A first upper electrode is provided on the first ferroelectric film. A first interconnection layer is provided above the first upper electrode. A first contact plug electrically connects the first interconnection layer and first impurity diffusion area.

摘要翻译： 在形成于半导体衬底的表面中的第一沟槽的底部的半导体衬底中形成第一杂质扩散区。 在半导体基板的表面形成第二杂质扩散区域，每个第一杂质扩散区域的一端与第一沟槽的第一侧壁接触，并且各自具有与第一杂质扩散区域相同的导电类型。 第一栅电极设置在第一和第二杂质扩散区之间的第一侧壁上，其间插入有栅极绝缘膜。 第一铁电体膜设置在设置在第二杂质区域上的第一下部电极上。 第一上电极设置在第一铁电体膜上。 第一互连层设置在第一上电极上方。 第一接触插塞电连接第一互连层和第一杂质扩散区。

公开(公告)号：US20050062113A1

公开(公告)日：2005-03-24

申请号：US10802810

申请日：2004-03-18

申请人： Shinichi Watanabe

发明人： Shinichi Watanabe

IPC分类号： H01L27/108 ,  H01L21/28 ,  H01L21/30 ,  H01L21/336 ,  H01L21/8242 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L29/6656 ,  H01L21/28061 ,  H01L21/3003 ,  H01L27/10861 ,  H01L27/10873 ,  H01L29/51

摘要： A semiconductor device with an insulating layer including deuterium comprising: a semiconductor substrate; a gate insulating film including deuterium therein and formed on the semiconductor substrate; diffusion layers formed in the semiconductor substrate and located apart from each other to be adjacent to the gate insulating film; a gate electrode formed on the gate insulating film; a first insulating film including deuterium therein and formed on a side surface of the gate electrode; and a protective layer formed so as to cover the first insulating film.

摘要翻译： 一种具有包括氘的绝缘层的半导体器件，包括：半导体衬底; 在该半导体基板上形成有包含氘的栅绝缘膜， 扩散层形成在半导体衬底中并且彼此分离以与栅极绝缘膜相邻; 形成在栅极绝缘膜上的栅电极; 包括其中的氘的第一绝缘膜，并形成在栅电极的侧表面上; 以及形成为覆盖第一绝缘膜的保护层。

公开(公告)号：US06853749B2

公开(公告)日：2005-02-08

申请号：US09995714

申请日：2001-11-29

申请人： Shinichi Watanabe ,  Hideki Honma

发明人： Shinichi Watanabe ,  Hideki Honma

IPC分类号： G06K9/20 ,  G06F13/00 ,  G06K9/00 ,  G06K9/03 ,  H04N1/00 ,  H04N1/32 ,  H04N1/387 ,  G06K9/34

CPC分类号： G06K9/033

摘要： A character recognition section generates character recognition result information resulting from character recognition of image information. An image information cutout section cuts out character recognition image information, corresponding to an area as to which the character recognition is performed, from the image information. A recognition result generation section generates recognition result information which is composed of the character recognition result information and the character recognition image information. A recognition result transmission section transmits the recognition result information to other terminals using electronic mail. As a result, an information communications apparatus of the invention can make transmissions of information to the wide area, without increasing the network load, which is to be used for the determination of whether or not a character recognition has been accurately performed.

摘要翻译： 字符识别部生成由图像信息的字符识别得到的字符识别结果信息。 图像信息切出部从图像信息中切出对应于执行了字符识别的区域的文字识别图像信息。 识别结果生成部生成由字符识别结果信息和字符识别图像信息构成的识别结果信息。 识别结果发送部分使用电子邮件将识别结果信息发送到其他终端。 结果，本发明的信息通信装置可以在不增加网络负载的情况下，向广域进行信息的传输，这将用于确定字符识别是否已经被准确地执行。

公开(公告)号：US06850757B2

公开(公告)日：2005-02-01

申请号：US09836270

申请日：2001-04-18

申请人： Shinichi Watanabe ,  Toshio Nagatsuka

发明人： Shinichi Watanabe ,  Toshio Nagatsuka

IPC分类号： G06F13/00 ,  H04L12/28 ,  H04L12/58 ,  H04W4/12 ,  H04M11/10 ,  G06F15/16 ,  H04M11/00

CPC分类号： H04L51/24 ,  H04L51/38 ,  H04W4/12

摘要： A mail notification apparatus is provided that enables a user of a cellular phone to know of the arrival of an electronic mail, even when the user is away from his/her office. The mail notification apparatus stores an electronic mail address of a local mail account in association with a mail address of a cellular phone. When it is determined that the electronic mail has arrived at the electronic mail address, the mail notification apparatus notifies, by using electronic mail, the arrival of the electronic mail to the cellular phone through the Internet and a communication vender mail server.

摘要翻译： 提供了一种邮件通知装置，即使当用户离开他/她的办公室时，蜂窝电话的用户也能够知道电子邮件的到来。 邮件通知装置与蜂窝电话的邮件地址相关联地存储本地邮件帐户的电子邮件地址。 当确定电子邮件已经到达电子邮件地址时，邮件通知装置通过使用电子邮件通过因特网和通信供应商邮件服务器通知电子邮件到达移动电话。

公开(公告)号：US06647784B2

公开(公告)日：2003-11-18

申请号：US09997249

申请日：2001-11-30

申请人： Mikio Kashiwai ,  Shiro Sato ,  Hisamitsu Takagi ,  Shinichi Watanabe ,  Hidemi Ichinose ,  Yukiyasu Shiroi ,  Yoichiro Ishiguro ,  Isao Takeshita

发明人： Mikio Kashiwai ,  Shiro Sato ,  Hisamitsu Takagi ,  Shinichi Watanabe ,  Hidemi Ichinose ,  Yukiyasu Shiroi ,  Yoichiro Ishiguro ,  Isao Takeshita

IPC分类号： G01M100

CPC分类号： G01M1/34

摘要： The object of the invention is to provide a balance adjusted wheel and its manufacturing method utilizing a cutting surface, for which cutting is performed by setting a point as a rotation center offset by a given distance from the central axis of a wheel central portion. The invention will improve the work efficiency for wheel balance adjustment and manufacturing of tire/wheel assembly.

公开(公告)号：US06646496B2

公开(公告)日：2003-11-11

申请号：US10166819

申请日：2002-06-11

申请人： Shinichi Watanabe

发明人： Shinichi Watanabe

IPC分类号： G05F324

CPC分类号： G05F3/262

摘要： A current control circuit for maintaining constant current characteristics with respect to power source potential fluctuations has a first resistor with one end connected to a source potential first and second P-channel field effect transistors each having a source connected to the other end of the first resistor and a gate coupled to a gate of the other P-channel FET. The first P-channel FET has a drain directly connected to the mutually coupled gates. A second resistor connects a drain of the second P-channel FET to the mutually coupled gates, and a resistor element connects the mutually coupled gates to a zero potential. A voltage arising at the drain of the second P-channel FET is used as a gate-driving voltage for driving a gate of a current-setting transistor.

摘要翻译： 用于保持相对于电源电位波动的恒定电流特性的电流控制电路具有第一电阻器，其一端连接到源电位第一和第二P沟道场效应晶体管，每个源极连接到第一电阻器的另一端 以及耦合到另一个P沟道FET的栅极的栅极。 第一P沟道FET具有直接连接到相互耦合的栅极的漏极。 第二电阻器将第二P沟道FET的漏极连接到相互耦合的栅极，并且电阻器元件将相互耦合的栅极连接到零电位。 在第二P沟道FET的漏极处产生的电压用作用于驱动电流设定晶体管的栅极的栅极驱动电压。

公开(公告)号：US06632723B2

公开(公告)日：2003-10-14

申请号：US10132520

申请日：2002-04-26

申请人： Shinichi Watanabe ,  Takashi Ohsawa ,  Kazumasa Sunouchi ,  Yoichi Takegawa ,  Takeshi Kajiyama

发明人： Shinichi Watanabe ,  Takashi Ohsawa ,  Kazumasa Sunouchi ,  Yoichi Takegawa ,  Takeshi Kajiyama

IPC分类号： H01L2176

CPC分类号： H01L21/823481 ,  H01L21/763

摘要： A semiconductor device is disclosed, which includes a semiconductor substrate, drain and source regions of a MOS transistor, a gate electrode formed on a surface of a channel region of the MOS transistor trench type element isolation regions in each of which an insulating film is formed on a surface of a trench formed in the surface of the semiconductor substrate, the element isolation regions sandwiching the channel region from opposite sides thereof in a channel width direction, and a conductive material layer for a back gate electrode, which is embedded in a trench of at least one of the element isolation regions, configured to be supplied with a predetermined voltage to make an depletion layer in a region of the semiconductor substrate under the channel region of the MOS transistor or to voltage-control the semiconductor substrate region.

摘要翻译： 公开了一种半导体器件，其包括半导体衬底，MOS晶体管的漏极和源极区域，形成在MOS晶体管沟槽型元件隔离区域的沟道区域的表面中的栅电极，其中形成绝缘膜 在形成在半导体衬底的表面中的沟槽的表面上，元件隔离区域在沟道宽度方向上从其相对侧夹着沟道区域，以及嵌入在沟槽宽度方向上的背栅电极用导电材料层 被配置为被提供预定电压以在半导体衬底的位于MOS晶体管的沟道区域的区域内的耗尽层或者对半导体衬底区域进行电压控制的元件隔离区域中的至少一个。 PTEXT>

公开(公告)号：US06315018B1

公开(公告)日：2001-11-13

申请号：US09196349

申请日：1998-11-19

申请人： Shinichi Watanabe

发明人： Shinichi Watanabe

IPC分类号： B60C1112

CPC分类号： B60C11/13 ,  B60C11/0306 ,  B60C11/12 ,  B60C11/1281 ,  Y10S152/03 ,  Y10S152/903

摘要： A sipe formed in a block is structured, in a depthwise direction of the sipe, by a narrow groove portion formed at a ground-contact surface side of the sipe and a wide groove portion formed at a bottom portion side of the sipe and wider than the narrow wide portion. A portion connecting the narrow groove portion and the wide groove portion is inclined along a longitudinal direction of the sipe. When a pneumatic tire having a tread surface on which such blocks are formed is worn, wear proceeds as follows. At an initial stage of wear during which draining performance of main grooves is excellent, only the narrow groove portion is exposed so that noise is suppressed. At an intermediate stage of wear during which draining performance of the main grooves deteriorates, the wide groove portion is gradually exposed, and the draining performance of the sipe improves to compensate for deterioration of the draining performance of the main grooves. At a final stage of wear, only the wide groove portion remains, and because a depth of the sipe is small, noise is suppressed. In this way, noise can be suppressed until the final stage of wear of the tire, and at the same time, deterioration in wet performance of the tire can be suppressed.

摘要翻译： 形成在块体中的刀槽花纹在刀槽花纹的深度方向上由形成在刀槽花纹的接地面侧的窄槽部和形成在刀槽花纹的底部侧的宽槽部构成， 狭窄的部分。 连接窄槽部和宽槽部的部分沿着刀槽花纹的长度方向倾斜。 当具有形成有这种块的胎面的充气轮胎磨损时，磨损如下进行。 在主凹槽的排水性能优异的磨损初始阶段，只有窄槽部分露出，从而抑制噪声。 在主槽的排水性能劣化的中间磨损阶段，宽槽部逐渐暴露，并且刀槽花纹的排出性能提高，以补偿主槽的排水性能的劣化。 在磨损的最后阶段，只有宽槽部分保留，并且由于刀槽花纹的深度小，所以噪声被抑制。 以这种方式，可以抑制噪音直到轮胎的最后磨损阶段，同时可以抑制轮胎的湿润性能的劣化。

公开(公告)号：US5537637A

公开(公告)日：1996-07-16

申请号：US207209

申请日：1994-03-08

申请人： Tadao Sugita ,  Tatehiko Toyosawa ,  Kazumi Shoji ,  Shinichi Watanabe ,  Atsumi Fujiwara ,  Masaaki Kitanda

发明人： Tadao Sugita ,  Tatehiko Toyosawa ,  Kazumi Shoji ,  Shinichi Watanabe ,  Atsumi Fujiwara ,  Masaaki Kitanda

IPC分类号： H01Q1/00 ,  H04B5/00 ,  H04H20/80 ,  H04B7/14

CPC分类号： H04H20/80 ,  H01Q1/007 ,  H04B5/0093

摘要： A medium-frequency radio transmission system is formed by installing a receiving antenna for receiving an amplitude-modulated medium-frequency radio wave at the rooftop of an existing building, receiving the medium-frequency radio wave, coupling the received medium-frequency radio wave to an existing distributing cable or distributing conductive piping with or without a coupler for the radio wave, and transmitting the radio wave to a predetermined floor. At the predetermined floor the basement or tunnel of an existing building such as underground shopping mall, underground parking lot, underground railway, road tunnel or deep space of massive building is provided with a coupling such as an existing loop-like or linear wiring or piping line with or without a coupler.

摘要翻译： 通过在现有建筑物的屋顶安装用于接收调幅中频无线电波的接收天线，接收中频无线电波，将接收到的中频无线电波耦合到 现有的分配电缆或具有或不具有用于无线电波的耦合器的导电管线，以及将无线电波发射到预定的地板。 在预定楼层，现有建筑物的地下室或隧道，如地下商场，地下停车场，地下铁路，公路隧道或大型建筑物的深空，设有诸如现有的环状或线性布线或管道 具有或不具有耦合器的线。

公开(公告)号：US5156794A

公开(公告)日：1992-10-20

申请号：US720673

申请日：1991-06-25

申请人： Nozomu Nakanishi ,  Hironobu Otani ,  Takeshi Hasegawa ,  Shinichi Watanabe

发明人： Nozomu Nakanishi ,  Hironobu Otani ,  Takeshi Hasegawa ,  Shinichi Watanabe

IPC分类号： B29B7/48 ,  C11D13/18

CPC分类号： B29B7/481 ,  C11D13/18

摘要： A pulverizing/kneading apparatus for pulverizing and kneading a material such as a soap compound. The material is supplied in a barrel in which are provided a pair of shafts respectively having feeding helical gears and returning helical gears. The material supplied is kneaded and the fine particles contained in the material pulverized by the gears. The forward driving force of the feeding gears is larger than the backward driving force of the returning gears so that the material advances forwardly toward the discharge opening of the barrel.