公开(公告)号：US20100171138A1

公开(公告)日：2010-07-08

申请号：US12651734

申请日：2010-01-04

申请人： Shunpei Yamazaki ,  Masahiro Katayama ,  Shingo Eguchi ,  Yoshiaki Oikawa ,  Ami Nakamura ,  Satoshi Seo ,  Kaoru Hatano

发明人： Shunpei Yamazaki ,  Masahiro Katayama ,  Shingo Eguchi ,  Yoshiaki Oikawa ,  Ami Nakamura ,  Satoshi Seo ,  Kaoru Hatano

IPC分类号： H01L33/00

CPC分类号： H01L27/3246 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/52 ,  H01L51/524 ,  H01L51/5253 ,  H01L2251/5338 ,  H05B33/02 ,  H05B33/04 ,  H05B33/12

摘要： Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.

摘要翻译： 提供了薄且高度可靠的发光元件。 此外，以高产率制造在柔性基板上形成发光元件的发光器件。 一个发光装置包括柔性基板，形成在柔性基板上的发光元件和覆盖发光元件的树脂膜，在发光元件中，作为隔板的绝缘层具有凸部和凸部 部分被嵌入树脂膜中，即树脂膜覆盖绝缘层的整个表面和第二电极的整个表面，由此可以使发光元件变薄并且高度可靠。 此外，在其制造方法中可以以高产率制造发光器件。

公开(公告)号：US20100072611A1

公开(公告)日：2010-03-25

申请号：US12564637

申请日：2009-09-22

申请人： Yoshiaki Oikawa ,  Shingo Eguchi

发明人： Yoshiaki Oikawa ,  Shingo Eguchi

IPC分类号： H01L23/06

CPC分类号： H01L23/295 ,  H01L23/3107 ,  H01L23/60 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00

摘要： An object is to provide a thin and small semiconductor device that has high reliability and high resistance to external stress and electrostatic discharge. Another object is to manufacture a semiconductor device with high yield while shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process. A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown (malfunction of the circuit or damage to a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge. By providing an antenna on the external side of the conductive shield, a sufficient communication capability is secured. With the use of a pair of insulators which sandwich the semiconductor integrated circuit, a thin and small semiconductor device that has resistance properties and high reliability can be provided. Further, shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process, so that a semiconductor device can be manufactured with high yield.

摘要翻译： 本发明的目的是提供一种具有高可靠性和高外部应力和静电放电性能的薄而小的半导体器件。 另一个目的是制造高产率的半导体器件，同时在制造过程中防止由外部应力或静电放电引起的形状缺陷和缺陷特性。 覆盖半导体集成电路的导电屏蔽防止由于静电放电而导致的半导体集成电路的静电击穿（电路的故障或半导体元件的损坏）。 通过在导电屏蔽的外侧设置天线，确保足够的通信能力。 通过使用夹在半导体集成电路中的一对绝缘体，可以提供具有电阻特性和高可靠性的薄型和小型半导体器件。 此外，在制造过程中防止由外部应力或静电放电引起的形状缺陷和缺陷特性，从而可以高产率制造半导体器件。

公开(公告)号：US20100072583A1

公开(公告)日：2010-03-25

申请号：US12564603

申请日：2009-09-22

申请人： Yoshiaki Oikawa ,  Shingo Eguchi

发明人： Yoshiaki Oikawa ,  Shingo Eguchi

IPC分类号： H01L23/60 ,  H01L23/02

CPC分类号： H01L23/60 ,  H01L23/3107 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00

摘要： With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

摘要翻译： 通过使用形成在半导体集成电路的顶部或底部的导电屏蔽，防止由静电放电引起的半导体集成电路的静电击穿（电路的故障或半导体元件的损坏），并且充分的通信 获得能力。 通过使用夹持半导体集成电路的一对绝缘体，可以提供厚度和尺寸减小并且具有耐外部应力的高度可靠的半导体器件。 可以以高产率制造半导体器件，同时在制造过程中防止由外部应力或静电放电引起的形状和特性的缺陷。

公开(公告)号：US20100065952A1

公开(公告)日：2010-03-18

申请号：US12556229

申请日：2009-09-09

申请人： Yoshiaki Oikawa ,  Shingo Eguchi

发明人： Yoshiaki Oikawa ,  Shingo Eguchi

IPC分类号： H01L23/06 ,  G06K19/06

CPC分类号： H01L27/0248 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.

摘要翻译： 为了解决由于蓄积在绝缘体中的电荷的放电（静电放电的问题）导致包括薄膜晶体管的天线或电路的电池损坏的问题，半导体器件包括第一绝缘体，包括薄膜的电路 提供在第一绝缘体上的晶体管，设置在电路上并与电路电连接的天线，以及设置在天线上的第二绝缘体，设置在第一绝缘体和电路之间的第一导电膜，以及第二导电膜 设置在第二绝缘体和天线之间。

公开(公告)号：US20100060126A1

公开(公告)日：2010-03-11

申请号：US12552840

申请日：2009-09-02

申请人： Shingo Eguchi ,  Yasushi Shimizu ,  Noriaki Oguri

发明人： Shingo Eguchi ,  Yasushi Shimizu ,  Noriaki Oguri

IPC分类号： H01J61/94

CPC分类号： H01J1/316 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

摘要： There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 Ω/square and not more than 1×1013 Ω/square.

摘要翻译： 提供了根据本发明的电子源，其具有多个电子发射器件，其中每个电子发射器件具有一对电极，以及设置在该对之间的具有各自的电子发射部分的多个导电膜 的电极，以与所述一对电极电连接，所述电子源包括：短路抑制膜，其位于所述多个导电膜之间，并且设置在所述电子发射器件上以电连接到 一对电极，主要包含钨（W）和锗（Ge）氮化物，其中钨原子数与钨和锗原子数之比在短路抑制膜中为0.24以上，表面电阻率 的短路抑制膜不小于1×10 10Ω·OHgr·/平方并且不大于1×10 13Ω·平方。

公开(公告)号：US20100013372A1

公开(公告)日：2010-01-21

申请号：US12500247

申请日：2009-07-09

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

IPC分类号： H01J1/62

CPC分类号： H01L33/44 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

摘要： An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

摘要翻译： 目的是提供一种非常可靠的发光装置，该发光装置薄且不被外部局部压力损坏。 此外，另一个目的是通过在制造过程中防止由于外部应力引起的形状和特性的缺陷而以高产率制造发光器件。 发光元件被密封在其中纤维体浸渍有机树脂的第一结构体和其中纤维体浸渍有机树脂的第二结构体之间，由此可靠的发光器件是薄的和 可以提供强度。 此外，通过防止制造过程中的形状和特性的缺陷，可以以高产率制造发光器件。

公开(公告)号：US20090278252A1

公开(公告)日：2009-11-12

申请号：US12429202

申请日：2009-04-24

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Shunpei Yamazaki

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Shunpei Yamazaki

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L21/71 ,  H01L23/293 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/00

摘要： To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.

摘要翻译： 为了减少半导体器件的缺陷，例如由于外部应力和静电放电引起的形状和特性的缺陷。 提供高度可靠的半导体器件。 此外，为了通过减少制造过程中的上述缺陷来提高半导体器件的制造成品率。 该半导体器件包括夹在抗冲击电阻层和外部应力之间的半导体集成电路和扩散冲击的冲击扩散层和覆盖半导体集成电路的导电层。 通过使用覆盖半导体集成电路的导电层，可以防止由于半导体集成电路的静电放电引起的静电击穿（电路的故障或半导体元件的损坏）。

公开(公告)号：US07511303B2

公开(公告)日：2009-03-31

申请号：US11670460

申请日：2007-02-02

申请人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

发明人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

IPC分类号： H01L27/14

CPC分类号： H01L29/78624 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

公开(公告)号：US20090017567A1

公开(公告)日：2009-01-15

申请号：US12232036

申请日：2008-09-10

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/50

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

公开(公告)号：US07212265B2

公开(公告)日：2007-05-01

申请号：US10375017

申请日：2003-02-28

申请人： Shingo Eguchi ,  Yuriko Tsuji

发明人： Shingo Eguchi ,  Yuriko Tsuji

IPC分类号： G02F1/1335 ,  G02F1/136

CPC分类号： G02F1/133555 ,  G02F1/133504 ,  G02F2001/13685

摘要： With an object of providing a transflective type liquid crystal display device having a transparent electrode of an uneven structure formed without particularly increasing steps, in fabricating the transflective type liquid crystal display device, a amorphous transparent conductive film is formed on a substrate, a crystalline portion is formed in the amorphous transparent conductive film to thereby form the transparent conductive film including the crystalline portion, a amorphous portion is removed at a film surface of the transparent conductive film including the crystalline portion to thereby form the transparent conductive film having an uneven shape formed by a remaining crystalline portion at a film surface and a reflecting electrode having the uneven shape is formed by forming a reflective conductive film above the transparent electrode having the uneven shape.

摘要翻译： 本发明的目的是提供一种具有不特别增加步骤形成的具有不平坦结构的透明电极的透反射型液晶显示装置，在半透射型液晶显示装置的制造中，在基板上形成非晶体透明导电膜，结晶部分 形成在非晶透明导电膜中，从而形成包含结晶部分的透明导电膜，在包含晶体部分的透明导电膜的膜表面处去除非晶部分，从而形成具有不均匀形状的透明导电膜 通过在膜表面上的剩余结晶部分和具有不平坦形状的反射电极通过在具有不平坦形状的透明电极上形成反射导电膜而形成。