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公开(公告)号：US20120228643A1
公开(公告)日：2012-09-13
申请号：US13417362
申请日：2012-03-12
IPC分类号： H01L33/00
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.
摘要翻译： 包括薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，第三无机绝缘层上的阳极，与第三有机绝缘层重叠的第二有机绝缘层 所述阳极的端部具有35度至45度的倾斜角度，在所述第二有机绝缘层的上表面和所述侧表面上的第四无机绝缘层，并且在所述阳极上具有开口，与所述阳极接触的有机化合物层 和第四无机绝缘层并含有发光材料，以及与有机化合物层接触的阴极，其中第三和第四无机绝缘层包括氮化硅或氮化铝。
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公开(公告)号：US08238152B2
公开(公告)日：2012-08-07
申请号：US12711333
申请日：2010-02-24
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译： 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。
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公开(公告)号：US08218099B2
公开(公告)日：2012-07-10
申请号：US12871162
申请日：2010-08-30
申请人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
发明人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
IPC分类号： G02F1/136
CPC分类号： H01L27/1225
摘要： An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.
摘要翻译： 本发明提供一种有源矩阵液晶显示装置，其中在一个基板上形成多种电路，并且根据多种电路的特性设置多种薄膜晶体管。 包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。 使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。 此外，使用透光材料形成像素薄膜晶体管的主要部分，使得开口率增加。
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公开(公告)号：US20110084272A1
公开(公告)日：2011-04-14
申请号：US12900136
申请日：2010-10-07
申请人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/22 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。
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公开(公告)号：US07737449B2
公开(公告)日：2010-06-15
申请号：US11984552
申请日：2007-11-19
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5262 , H01L2251/5315 , H01L2251/5323
摘要： The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
摘要翻译： 本发明提供了具有高亮度和低功耗的高发光效率（光提取效率）的高度稳定的发光器件及其制造方法。 分隔壁和耐热平面化膜由相同的材料形成以便彼此良好地粘附，从而降低材料成本。 在耐热平面化膜上形成阳极或阴极。 分隔壁和耐热平面化膜彼此粘合而不插入其间具有不同折射率的膜，因此在界面上不会引起光的反射。
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公开(公告)号：US07709846B2
公开(公告)日：2010-05-04
申请号：US12244984
申请日：2008-10-03
IPC分类号： H01L29/267
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。
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公开(公告)号：US07442963B2
公开(公告)日：2008-10-28
申请号：US11224100
申请日：2005-09-13
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。
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公开(公告)号：US07306978B2
公开(公告)日：2007-12-11
申请号：US10941837
申请日：2004-09-16
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5262 , H01L2251/5315 , H01L2251/5323
摘要： The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
摘要翻译： 本发明提供了具有高亮度和低功耗的高发光效率（光提取效率）的高度稳定的发光器件及其制造方法。 分隔壁和耐热平面化膜由相同的材料形成以便彼此良好地粘附，从而降低材料成本。 在耐热平面化膜上形成阳极或阴极。 分隔壁和耐热平面化膜彼此粘合而不插入其间具有不同折射率的膜，因此在界面上不会引起光的反射。
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公开(公告)号：US07301279B2
公开(公告)日：2007-11-27
申请号：US10098617
申请日：2002-03-18
IPC分类号： H01L51/52
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L51/5206 , H01L51/5253 , H01L2227/323
摘要： A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
摘要翻译： 本发明的发光装置包括：形成在绝缘表面上的第一电极; 覆盖所述第一电极的端部并具有锥形边缘的第一绝缘层; 第二绝缘层，形成在第一电极和第一绝缘层上，并且由选自氧化硅，氮化硅和氮氧化硅中的一种或多种形成; 形成在所述第二绝缘层上的有机化合物层; 以及形成在有机化合物层上的第二电极。
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公开(公告)号：US07042024B2
公开(公告)日：2006-05-09
申请号：US10289261
申请日：2002-11-07
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
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