公开(公告)号：US06673659B2

公开(公告)日：2004-01-06

申请号：US09771625

申请日：2001-01-30

申请人： Mitsunori Sakama ,  Noriko Ishimaru ,  Masahiko Miwa ,  Michinori Iwai

发明人： Mitsunori Sakama ,  Noriko Ishimaru ,  Masahiko Miwa ,  Michinori Iwai

IPC分类号： H01L2100

CPC分类号： H01L27/1218 ,  G02F1/13454 ,  H01L21/67236 ,  H01L27/1214 ,  H01L27/1262 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L2029/7863

摘要： A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.

摘要翻译： 为了防止杂质从玻璃基板扩散到有源层中，为了保持诸如TFT的Vth和S值的特性的稳定性，为了保持提高的生产率，为TFT形成基膜。 使用通过改变H 2和N 2 O的流量来连续地改变N，O和H的组成比的膜作为基膜，以防止TFT特性的变化。 基膜可以通过改变相同成膜室中的H 2和N 2 O的流速来提高生产率而形成。

公开(公告)号：US20110034215A1

公开(公告)日：2011-02-10

申请号：US12910150

申请日：2010-10-22

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H04M1/02

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

公开(公告)号：US20060267114A1

公开(公告)日：2006-11-30

申请号：US11418717

申请日：2006-05-05

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L29/94 ,  H01L23/58

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

公开(公告)号：US07064388B2

公开(公告)日：2006-06-20

申请号：US11025344

申请日：2004-12-28

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L27/01 ,  H01L21/00

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

公开(公告)号：US06680817B1

公开(公告)日：2004-01-20

申请号：US09554803

申请日：2000-07-27

申请人： Yasuaki Kano ,  Kazuyuki Hirooka ,  Kazuya Koseki ,  Takao Hiramoto ,  Masahiro Kiyota ,  Yoshihisa Takayama ,  Mitsunori Sakama

发明人： Yasuaki Kano ,  Kazuyuki Hirooka ,  Kazuya Koseki ,  Takao Hiramoto ,  Masahiro Kiyota ,  Yoshihisa Takayama ,  Mitsunori Sakama

IPC分类号： G11B23023

CPC分类号： G11B15/67547 ,  G11B15/07 ,  G11B23/08714

摘要： A tape cartridge housing a magnetic tape includes an auxiliary storage medium having a storage unit in which to store the recording medium information such as design parameters or the number of times of recording and/or reproduction of the magnetic tape, and a transmission/reception unit for effecting inputting/outputting of the recording medium information with the recording and/or reproducing apparatus. The auxiliary storage medium is mounted so that the transmission/reception unit is exposed to the outside through an opening provided in a lateral surface of the main cartridge body unit not obstructing the loading of the magnetic tape, that is in a surface of the main cartridge body unit other than its front surface as an inserting end of the tape cartridge into the inside of the recording and/or reproducing apparatus. The auxiliary storage medium has an antenna constituting the transmission/reception unit for inputting/outputting the recording medium information with the recording and/or reproducing apparatus. It is through this antenna that the power is supplied from the auxiliary recording and/or reproducing unit provided on the recording and/or reproducing apparatus in accordance with a non-contact system transmitting the recording medium information and the power overlaid on the recording medium information.

摘要翻译： 容纳磁带的磁带盒包括具有存储单元的辅助存储介质，用于存储记录介质信息，例如设计参数或磁带的记录和/或再现次数以及发送/接收单元 用于利用记录和/或再现装置进行记录介质信息的输入/输出。 辅助存储介质被安装成使得发送/接收单元通过设置在主盒体单元的侧表面上的开口而暴露于外部，而不妨碍磁带的装载，即主盒的表面 主体单元除了其前表面之外，作为带盒的插入端到记录和/或再现装置的内部。 辅助存储介质具有构成用于使用记录和/或再现装置输入/输出记录介质信息的发送/接收单元的天线。 通过该天线，根据传送记录介质信息和覆盖在记录介质信息上的功率的非接触式系统，从设置在记录和/或再现装置上的辅助记录和/或再现单元提供电力 。

公开(公告)号：US07821071B2

公开(公告)日：2010-10-26

申请号：US12399573

申请日：2009-03-06

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L29/76 ,  H01L21/31

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

公开(公告)号：US20090224260A1

公开(公告)日：2009-09-10

申请号：US12399573

申请日：2009-03-06

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

摘要翻译： 本发明的目的是防止TFT（薄膜晶体管）的劣化。 通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

公开(公告)号：US20060035035A1

公开(公告)日：2006-02-16

申请号：US11205084

申请日：2005-08-17

申请人： Mitsunori Sakama

发明人： Mitsunori Sakama

IPC分类号： H05H1/24 ,  H01L21/20

CPC分类号： C23C16/515 ,  C23C16/24 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45502 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/505 ,  C30B25/105 ,  C30B29/06 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/3322 ,  H01J2237/3328 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/84

摘要： When an amorphous silicon film is formed by a plasma CVD method, a hydrogen gas is supplied into a chamber before the start of film formation to cause discharge. In this state, film formation is not made. At the step where the discharge becomes stable, silane as a film forming gas is supplied into the chamber. At the same time, supply of the hydrogen gas is stopped. Silane is decomposed by the stable discharge, and film formation of an amorphous silicon film is made. By doing so, it is possible to eliminate the instability at the start of discharge. Film formation can be carried out in the state where the discharge is always stable. Also, in the plasma CVD method using silane as the film forming gas, supply of the silane gas is stopped in the state where the radio frequency discharge is maintained, and instead of the silane gas, the hydrogen gas as the discharge gas is supplied. For a predetermined period of time, plasma without film formation by decomposition of the hydrogen gas is formed. Since a negative self bias is applied to the formed surface in this state, negatively charged minute particles do not adhere to the formed surface. The discharge is stopped in the state where the minute particles in the atmosphere are exhausted. In this way, the state where the minute particles do not adhere to the formed surface can be made.

摘要翻译： 当通过等离子体CVD法形成非晶硅膜时，在开始成膜之前将氢气供应到室中以引起放电。 在这种状态下，不形成成膜。 在放电稳定的步骤中，作为成膜气体的硅烷被供给到室中。 同时停止供给氢气。 硅烷通过稳定的放电分解，并且制成非晶硅膜的膜形成。 通过这样做，可以消除开始放电时的不稳定性。 成膜可以在放电总是稳定的状态下进行。 此外，在使用硅烷作为成膜气体的等离子体CVD法中，在保持射频放电的状态下停止供给硅烷气体，代替硅烷气体，供给作为放电气体的氢气。 在预定的时间段内，形成通过氢气分解而不形成膜的等离子体。 由于在该状态下对形成的表面施加负的自偏压，所以带负电的微小颗粒不会附着在形成的表面上。 在大气中的微小颗粒被排出的状态下停止放电。 以这种方式，可以制成微小颗粒不附着到成形表面的状态。

公开(公告)号：US20050116294A1

公开(公告)日：2005-06-02

申请号：US11025344

申请日：2004-12-28

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/77 ,  H01L27/01 ,  H01L27/12 ,  H01L29/786 ,  H01L31/0392

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

公开(公告)号：US08610182B2

公开(公告)日：2013-12-17

申请号：US13440200

申请日：2012-04-05

申请人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

发明人： Masahiko Hayakawa ,  Mitsunori Sakama ,  Satoshi Toriumi

IPC分类号： H01L29/80 ,  H01L21/31

CPC分类号： H01L21/02686 ,  G02F1/1368 ,  H01L21/2026 ,  H01L21/3145 ,  H01L21/7624 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/78603 ,  H01L29/78621

摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.