公开(公告)号：US08293594B2

公开(公告)日：2012-10-23

申请号：US12835907

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Hideki Uochi

IPC分类号： H01L21/84

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/45

摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。 驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。 用于驱动电路的薄膜晶体管的源极和漏极由金属形成。 使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。 显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。 用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。 使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

公开(公告)号：US20100072470A1

公开(公告)日：2010-03-25

申请号：US12556695

申请日：2009-09-10

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L33/00

CPC分类号： H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

摘要翻译： 保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅绝缘层上的栅电极重叠的第一氧化物半导体层，与沟道形成区重叠的沟道保护层 的第一氧化物半导体层，以及一对第一布线层和第二布线层，其端部与沟道保护层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。 在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。 因此，可以降低结漏电，提高非线性元件的特性。

公开(公告)号：US09478597B2

公开(公告)日：2016-10-25

申请号：US12556593

申请日：2009-09-10

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC分类号： H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L51/52

CPC分类号： H01L27/3276 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/7869 ,  H01L51/5221

摘要： A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

摘要翻译： 显示装置包括其中像素以矩阵形式布置的像素部分，该像素包括具有不同量的氧并且具有通道保护层的至少两种氧化物半导体层的组合的反交错薄膜晶体管 半导体层作为与栅电极层重叠的沟道形成区域和与反交错薄膜晶体管电连接的像素电极层。 在该显示装置的像素部的周围，设置由与像素电极层相同的材料构成的导电层的焊盘部。 另外，导电层与形成在对置基板上的公共电极层电连接。

公开(公告)号：US08772773B2

公开(公告)日：2014-07-08

申请号：US12553122

申请日：2009-09-03

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L29/786

摘要： A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

公开(公告)号：US08390044B2

公开(公告)日：2013-03-05

申请号：US12954338

申请日：2010-11-24

申请人： Daisuke Kawae ,  Hideki Uochi ,  Shunpei Yamazaki

发明人： Daisuke Kawae ,  Hideki Uochi ,  Shunpei Yamazaki

IPC分类号： H01L31/062

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/78606 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696

摘要： A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×1019/cm3 or lower, a work function φms of a source electrode in contact with the oxide semiconductor, a work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ

摘要翻译： 提供了包括氧化物半导体并且具有有利的整流特性的非线性元件（例如二极管）。 在包含氢浓度为5×1019 / cm3以下的氧化物半导体的晶体管中，与氧化物半导体接触的源电极的功函数＆amp; ms，接触的漏电极的功函数＆phd 与氧化物半导体相比，氧化物半导体的电子亲和力χ满足＆lt; ms＆nlE;χ＆phgr; md，并且漏电极和氧化物半导体之间的接触面积大于源电极和源电极之间的接触面积 氧化物半导体。 通过电连接晶体管中的栅电极和漏电极，可以实现具有良好整流特性的非线性元件。

公开(公告)号：US08334540B2

公开(公告)日：2012-12-18

申请号：US13173559

申请日：2011-06-30

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

摘要： The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.

摘要翻译： 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 第一布线层和第二布线层，其在栅极绝缘膜上方并且其端部与栅电极重叠; 以及氧化物半导体层，其在所述栅电极的上方并与所述栅极绝缘膜和所述第一布线层和所述第二布线层的端部接触。 非线性元件的栅电极和扫描线或信号线包括在布线中，非线性元件的第一或第二布线层直接连接到布线，以施加栅极的电位 电极。

公开(公告)号：US09048320B2

公开(公告)日：2015-06-02

申请号：US12556695

申请日：2009-09-10

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： G02F1/1333 ,  G02F1/136 ,  H01L29/786 ,  H01L27/02 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L27/0266 ,  H01L27/1225 ,  H01L27/124

摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

摘要翻译： 保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅绝缘层上的栅电极重叠的第一氧化物半导体层，与沟道形成区重叠的沟道保护层 的第一氧化物半导体层，以及一对第一布线层和第二布线层，其端部与沟道保护层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。 在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。 因此，可以降低结漏电，提高非线性元件的特性。

公开(公告)号：US08941114B2

公开(公告)日：2015-01-27

申请号：US12553122

申请日：2009-09-03

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/04 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/1362

CPC分类号： H01L27/1214 ,  G02F1/13624 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66742 ,  H01L29/7869 ,  H01L29/78693

摘要： A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

摘要翻译： 保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，一对第一和第二布线层，其端部与栅极绝缘层上的栅电极重叠，并且其中 层叠第二氧化物半导体层和导电层，以及与至少栅电极重叠并与栅极绝缘层接触的第一氧化物半导体层，导电层的侧面部和顶面部的一部分，以及 在第一布线层和第二布线层中的第二氧化物半导体层的侧面部分。 在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。 因此，可以降低结漏电，提高非线性元件的特性。

公开(公告)号：US08643018B2

公开(公告)日：2014-02-04

申请号：US13616019

申请日：2012-09-14

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Hideki Uochi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Hideki Uochi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L27/14 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/45

摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。 驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。 用于驱动电路的薄膜晶体管的源极和漏极由金属形成。 使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。 显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。 用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。 使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。

公开(公告)号：US08304765B2

公开(公告)日：2012-11-06

申请号：US12556594

申请日：2009-09-10

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  G02F1/13392 ,  G02F1/13458 ,  G02F2001/13398 ,  G09G2300/0804 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5221

摘要： A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

摘要翻译： 显示装置包括其中像素电极层布置在矩阵中的像素部分，并且相应于像素电极设置具有至少两种具有不同量的氧的氧化物半导体层的组合的倒置交错薄膜晶体管 层。 在该显示装置的像素部的周围，设置有通过与像素电极层相同的材料形成的导电层与形成在对置基板上的公共电极层电连接的焊盘部。 通过提供适合于设置在显示面板中的焊盘部分的结构，实现了本发明防止由于各种显示装置中的薄膜分离引起的缺陷的一个反对意见。