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公开(公告)号：US07573130B1
公开(公告)日：2009-08-11
申请号：US12357721
申请日：2009-01-22
申请人： Thomas M Shaw , Michael W Lane , Xio Hu Liu , Griselda Bonilla , James P Doyle , Howard S Landis , Eric G Liniger
发明人： Thomas M Shaw , Michael W Lane , Xio Hu Liu , Griselda Bonilla , James P Doyle , Howard S Landis , Eric G Liniger
IPC分类号： H01L23/44
CPC分类号： H01L23/562 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a process for preparing a robust crack-absorbing integrated circuit chip comprising a crack trapping structure containing two metal plates and a via-bar structure sandwiched between said plates.
摘要翻译： 本发明涉及一种制备坚固的抗剥离集成电路芯片的方法，该芯片包括一个包含两个金属板的裂纹捕获结构和夹在所述板之间的通孔杆结构。
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公开(公告)号：US20090127711A1
公开(公告)日：2009-05-21
申请号：US11940487
申请日：2007-11-15
申请人： Griselda Bonilla , Daniel C. Edelstein , Mahadevaiyer Krishnan , Takeshi Nogami , David L. Rath
发明人： Griselda Bonilla , Daniel C. Edelstein , Mahadevaiyer Krishnan , Takeshi Nogami , David L. Rath
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76847 , H01L21/76805 , H01L21/76883 , H01L23/53238 , H01L2224/13099 , H01L2924/14
摘要： A highly reliable copper interconnect structure and method of fabricating the same is provided. The interconnect structure comprises a metal layer buried between an adjacent upper copper layer and an adjacent lower copper layer structure. More specifically, the interconnect structure comprises a recess formed in a dielectric layer; a barrier metal lining sidewalls of the recess; a first copper layer within the recess; a second copper layer within the recess; and a metal layer buried between the first copper layer and the second copper layer. The method comprises forming a recess in an interlayer dielectric; forming a first copper layer, a metal layer over the first copper layer and a second copper layer over the metal layer, all within the recess. The metal layer is sandwiched between the first copper layer and the second copper layer within the recess.
摘要翻译： 提供了一种高度可靠的铜互连结构及其制造方法。 互连结构包括埋在相邻的上铜层和相邻的下铜层结构之间的金属层。 更具体地，互连结构包括形成在电介质层中的凹部; 衬垫侧壁的阻挡金属衬垫; 凹槽内的第一铜层; 凹槽内的第二铜层; 以及埋在第一铜层和第二铜层之间的金属层。 该方法包括在层间电介质中形成凹陷; 在第一铜层上形成第一铜层，金属层和金属层上的第二铜层，全部在凹部内。 金属层夹在凹槽内的第一铜层和第二铜层之间。
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公开(公告)号：US20090026625A1
公开(公告)日：2009-01-29
申请号：US12245133
申请日：2008-10-03
IPC分类号： H01L23/52
CPC分类号： H01L23/53295 , H01L21/76825 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and method of fabricating the same in which the adhesion between a chemically etched dielectric material and a noble metal liner is improved are provided. In accordance with the present invention, a chemically etching dielectric material is subjected to a treatment step which modified the chemical nature of the dielectric material such that the treated surfaces become hydrophobic. The treatment step is performed prior to deposition of the noble metal liner and aides in improving the adhesion between the chemically etched dielectric material and the noble metal liner.
摘要翻译： 提供了一种互连结构及其制造方法，其中改善了化学蚀刻的电介质材料和贵金属衬垫之间的粘合性。 根据本发明，对化学蚀刻电介质材料进行改性电介质材料的化学性质使得被处理的表面变得疏水的处理步骤。 在沉积贵金属衬垫和助剂以改善化学蚀刻的电介质材料和贵金属衬垫之间的粘附性之前进行处理步骤。
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公开(公告)号：US20080284030A1
公开(公告)日：2008-11-20
申请号：US12179057
申请日：2008-07-24
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L21/76844 , H01L21/76847 , H01L21/76877 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.
摘要翻译： 本发明提供了一种改进的可靠性的互连结构。 本发明的互连结构具有增强的由嵌入式金属衬垫提供的通孔触点的机械强度。 嵌入的金属衬垫可以是连续的或不连续的。 不连续的嵌入式金属衬垫由位于层间介质层内的通孔底部的不连续界面提供。
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