公开(公告)号：US06872997B2

公开(公告)日：2005-03-29

申请号：US10765546

申请日：2004-01-26

申请人： Harry Liu ,  William Larson ,  Lonny Berg ,  Theodore Zhu ,  Shaoping Li ,  Romney R. Katti ,  Yong Lu ,  Anthony Arrott

发明人： Harry Liu ,  William Larson ,  Lonny Berg ,  Theodore Zhu ,  Shaoping Li ,  Romney R. Katti ,  Yong Lu ,  Anthony Arrott

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  H01L43/12 ,  H01L31/119

CPC分类号： H01L43/12 ,  G11C11/15 ,  H01L43/08

摘要： A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

摘要翻译： 公开了一种用于磁阻存储器的磁头结构，其具有足够大的位端以适应最小尺寸的接触或通孔。 通过提供这种布置，可以使用常规的接触和/或通孔处理步骤来制造磁头结构。 因此，可以降低制造装置的成本，并且可以提高总体可实现的产量。

公开(公告)号：US06865106B2

公开(公告)日：2005-03-08

申请号：US10775582

申请日：2004-02-10

申请人： David E. Fulkerson ,  Yong Lu

发明人： David E. Fulkerson ,  Yong Lu

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： G11C11/15

摘要： A technique to read a stored state in a magnetoresistive random access memory (MRAM) device, such as a giant magneto-resistance (GMR) MRAM device or a tunneling magneto-resistance (TMR) device uses a bit line in an MRAM device that is segmented into a first portion and a second portion. An interface circuit compares the resistance of a first portion and a second portion of a first bit line to the resistance of a first portion and a second portion of a second bit line to determine the logical state of a cell in the first bit line. The interface circuit includes a reset circuit that selectively couples the outputs of the interface circuit together. A subsequent decoupling of the outputs allows cross-coupling within the interface circuit to latch the outputs to a logical state corresponding to the stored magnetic state, thereby allowing the stored state of a cell to be read.

摘要翻译： 在诸如巨磁电阻（MRM）MRAM装置或隧道磁阻（TMR）装置的磁阻随机存取存储器（MRAM）装置中读取存储状态的技术使用MRAM装置中的位线 分割成第一部分和第二部分。 接口电路将第一位线的第一部分和第二部分的电阻与第二位线的第一部分和第二部分的电阻进行比较，以确定第一位线中的单元的逻辑状态。 接口电路包括将接口电路的输出选择性地耦合在一起的复位电路。 输出的随后的去耦允许接口电路内的交叉耦合以将输出锁存到对应于存储的磁状态的逻辑状态，从而允许读取单元的存储状态。

公开(公告)号：US06862700B2

公开(公告)日：2005-03-01

申请号：US10685297

申请日：2003-10-14

申请人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

发明人： Theodore Zhu ,  Gary Kirchner ,  Richard W. Swanson ,  Yong Lu

IPC分类号： G11C29/00

CPC分类号： G11C29/808 ,  G11C29/846

摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

摘要翻译： 公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。 这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。 由于可编程存储器元件是非易失性的，所以在运输过程中或者系统中的电源丢失时，所需的更换配置不会丢失。 通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。 通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。 此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余低或列的存储器元件替换。 这在更换过程中提供了更多的灵活性。

公开(公告)号：US06765823B1

公开(公告)日：2004-07-20

申请号：US10354251

申请日：2003-01-29

申请人： Theodore Zhu ,  Yong Lu ,  Anthony Arrott ,  Joel Drewes

发明人： Theodore Zhu ,  Yong Lu ,  Anthony Arrott ,  Joel Drewes

IPC分类号： G11C1115

CPC分类号： H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  H01L27/222

摘要： A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resistive memory, from a top-view perspective, is wide at the ends and narrower at the mid-, forming an I shape in one preferred embodiment. The end portions of the free magnetic layer are allowed to magnetically couple to the end portions of the pinned magnetic layer such that magnetic coupling is shifted to these widened regions and coupling in the mid-portion between the widened regions is minimized. Thus, the influence of the pinned magnetic layer on the magnetization orientation of the mid-portion of the free magnetic layer is substantially eliminated, allowing for increased predictability in switching behavior and increased write selectivity of memory cells.

摘要翻译： 公开了一种包括磁阻存储器单元的磁阻存储器，包括固定磁性层和自由磁性层。 两个磁性层在层的端部形成有加宽区域。 因此，从顶视角看，由磁阻存储器形成的形状在端部宽，在中间较窄，在一个优选实施例中形成I形。 允许自由磁性层的端部磁耦合到被钉扎的磁性层的端部，使得磁耦合转移到这些加宽的区域，并且在加宽区域之间的中间部分处的耦合被最小化。 因此，钉扎磁性层对自由磁性层的中间部分的磁化取向的影响基本上被消除，从而允许提高存储器单元的开关行为的可预测性和增加的写入选择性。

公开(公告)号：US06714441B1

公开(公告)日：2004-03-30

申请号：US10246245

申请日：2002-09-17

申请人： David E. Fulkerson ,  Yong Lu

发明人： David E. Fulkerson ,  Yong Lu

IPC分类号： G11C1100

CPC分类号： G11C11/15

摘要： A technique to read a stored state in a magnetoresistive random access memory (MRAM) device, such as a giant magneto-resistance (GMR) MRAM device or a tunneling magneto-resistance (TMR) device uses a bit line in an MRAM device that is segmented into a first portion and a second portion. An interface circuit compares the resistance of a first portion and a second portion of a first bit line to the resistance of a first portion and a second portion of a second bit line to determine the logical state of a cell in the first bit line. The interface circuit includes a reset circuit that selectively couples the outputs of the interface circuit together. A subsequent decoupling of the outputs allows cross-coupling within the interface circuit to latch the outputs to a logical state corresponding to the stored magnetic site, thereby allowing the stored state of a cell to be read.

摘要翻译： 在诸如巨磁电阻（MRM）MRAM装置或隧道磁阻（TMR）装置的磁阻随机存取存储器（MRAM）装置中读取存储状态的技术使用MRAM装置中的位线 分割成第一部分和第二部分。 接口电路将第一位线的第一部分和第二部分的电阻与第二位线的第一部分和第二部分的电阻进行比较，以确定第一位线中的单元的逻辑状态。 接口电路包括将接口电路的输出选择性地耦合在一起的复位电路。 输出的随后的去耦允许接口电路内的交叉耦合以将输出锁存到对应于所存储的磁场的逻辑状态，从而允许读取单元的存储状态。

公开(公告)号：US09584878B2

公开(公告)日：2017-02-28

申请号：US13995570

申请日：2011-10-20

申请人： Yong Lu

发明人： Yong Lu

IPC分类号： H04N5/93 ,  H04N5/77 ,  H04N21/854 ,  H04N21/218 ,  H04N21/2187 ,  H04N21/222 ,  H04N21/258 ,  H04N21/2665

CPC分类号： H04N21/854 ,  H04N21/21805 ,  H04N21/2187 ,  H04N21/222 ,  H04N21/25808 ,  H04N21/25866 ,  H04N21/2665 ,  H04N21/8106

摘要： Embodiments of present invention provide a method and system for collecting, transmitting, editing and integrating, broadcasting, and receiving signals. The method comprises acquiring one and/or more audio signals and one and/or more video signals or the one program collected by one and/or more audio and video collection terminals; editing and integrating the one and/or more audio signals and the one and/or more video signals or the one program on a network platform, and then broadcasting; selecting among the one and/or more audio signals and the one and/or more video signals for the one program at a receiving terminal, and receiving the selected audio signal and video signal.

摘要翻译： 本发明的实施例提供了一种用于收集，发送，编辑和集成，广播和接收信号的方法和系统。 该方法包括获取由一个和/或多个音频和视频采集终端收集的一个和/或多个音频信号和一个和/或更多个视频信号或一个节目; 在网络平台上编辑和整合一个和/或多个音频信号和一个和/或更多个视频信号或一个节目，然后进行广播; 在一个和/或多个音频信号中选择一个和/或更多个视频信号，并在接收终端处选择一个节目，并接收所选择的音频信号和视频信号。

公开(公告)号：US09441115B2

公开(公告)日：2016-09-13

申请号：US14358026

申请日：2011-11-14

申请人： Xiaoming Wu ,  Yong Lu ,  Hong Liu ,  Yinfeng Wu ,  Qianyuan Liu

发明人： Xiaoming Wu ,  Yong Lu ,  Hong Liu ,  Yinfeng Wu ,  Qianyuan Liu

IPC分类号： C09D5/08 ,  C23C22/60 ,  C23C22/68 ,  H05K3/28

CPC分类号： C09D5/086 ,  C23C22/60 ,  C23C22/68 ,  H05K3/282 ,  H05K2203/0786 ,  H05K2203/0793

摘要： The present invention relates to a water-based pore sealing agent enhancing PCB coating anti-oxidation and anti-corrosion properties, consisting of, by weight, 4-12 parts of a corrosion inhibitor, 15-25 parts of a mixed surfactants system, 10-20 parts of an ion chelating agent, 6-15 parts of a pH regulator, 20-40 parts of a builder, and the rest being purified water. When used to perform pore sealing on a PCB, the water-based pore sealing agent is diluted with purified water first to be diluted 10-100 times, preferably, 100/8-100/3 times. The pH value is 7-11, and is preferably 7.5-9.5. The surface tension is 18-28 dyn/cm. The pore sealing treatment uses a immersion process, and preferably ultrasonic waves are added at the same time to assist in cleaning the pores. For the pore sealing treatment, the temperature is 20-60° C., and the time is 60-150 seconds. After pore sealing, the temperature for drying the coated piece is 80-150° C., and the time is 60-120 seconds. The PCB treated with the water-based pore sealing agent of the present invention undergoes the neutral salt spray test, the nitric acid vapor test, the mixed gas test, and the sulfur dioxide and bonding tensile strength test, and the results have indicated that the anti-oxidation and anti-corrosion properties of the coating thereof are significantly enhanced.

摘要翻译： 本发明涉及一种提高PCB涂层抗氧化和抗腐蚀性能的水性密封剂，由重量比为4-12份的缓蚀剂组成，15-25份混合表面活性剂体系，10 -20份离子螯合剂，6-15份pH调节剂，20-40份助洗剂，其余为纯化水。 当用于在PCB上进行孔密封时，首先用净化水稀释水基密封剂以稀释10-100倍，优选为100 / 8-100 / 3倍。 pH值为7-11，优选为7.5-9.5。 表面张力为18-28dyn / cm。 孔密封处理使用浸渍法，优选同时加入超声波以辅助清洁毛孔。 对于孔密封处理，温度为20-60℃，时间为60-150秒。 孔密封后，涂层的干燥温度为80-150℃，时间为60-120秒。 用本发明的水性密封剂处理的PCB经过中性盐雾试验，硝酸蒸汽试验，混合气体试验，二氧化硫和接合拉伸强度试验，结果表明， 其涂层的抗氧化和抗腐蚀性能显着提高。

公开(公告)号：US09037953B2

公开(公告)日：2015-05-19

申请号：US13588700

申请日：2012-08-17

申请人： Yufei Li ,  Yong Lu ,  Ying Wang ,  Hao Yang

发明人： Yufei Li ,  Yong Lu ,  Ying Wang ,  Hao Yang

IPC分类号： H03M13/00 ,  H03M13/15 ,  H03M13/17 ,  H03M13/37 ,  G11C29/04

CPC分类号： H03M13/1575 ,  G06F11/10 ,  G11C2029/0411 ,  H03M13/152 ,  H03M13/1525 ,  H03M13/1565 ,  H03M13/17 ,  H03M13/3746

摘要： Exemplary embodiments for providing multi-bit error correction based on a BCH code are provided. In one such embodiment, the following operations are repeatedly performed, including shifting each bit of the BCH code rightward by 1 bit while filling the bit vacated due to the rightward shifting in the BCH code with 0, calculating syndrome values corresponding to the shifting of the BCH code, and determining a first error number in the BCH code under the shifting based on the syndrome values corresponding to the shifting of the BCH code. In the case where the first error number is not equal to 0, modified syndrome values are calculated corresponding to the shifting of the BCH code. The modified syndrome values are those corresponding to the case that the current rightmost bit of the BCH code under the shifting is changed to the inverse value. Additional operations are performed as described herein.

摘要翻译： 提供了用于基于BCH码提供多位纠错的示例性实施例。 在一个这样的实施例中，重复执行以下操作，包括将BCH码的每一位向右移位1位，同时填充由于BCH码中的向右移位而退出的位0，计算对应于 BCH码，并且基于与所述BCH码的移位相对应的校正子值，在所述移位下确定所述BCH码中的第一错误号。 在第一错误号不等于0的情况下，对应于BCH码的移位来计算修正的综合征值。 修正后的综合征值是对应于移位处的BCH码的当前最右边位置变为反向值的情况。 如本文所述执行附加操作。

公开(公告)号：US09020091B2

公开(公告)日：2015-04-28

申请号：US12102123

申请日：2008-04-14

申请人： Yong Lu ,  Xiaoyan Jiang

发明人： Yong Lu ,  Xiaoyan Jiang

IPC分类号： G21C3/34 ,  G21C3/352 ,  G21C3/356

CPC分类号： G21C3/352 ,  G21C3/3424 ,  G21C3/3566 ,  G21Y2002/20 ,  G21Y2002/302 ,  G21Y2002/303 ,  G21Y2004/301 ,  Y02E30/40

摘要： An improved grid for a nuclear reactor fuel assembly that has an egg-crate base grid as the primary support structure with each support cell of the base grid that supports a fuel rod having a lock-support sleeve that is rotatable within the support cell between a first and second orientation. In the first orientation the lock-support sleeve fits loosely within the support cell of the base grid and respectively, loosely receives the fuel rods that are loaded therein. The lock-support sleeves are then rotated to a second orientation that locks the fuel rods axially within the support cells.

摘要翻译： 一种用于核反应堆燃料组件的改进的电网，其具有蛋箱基栅格作为主支撑结构，其中基网格的每个支撑单元支撑燃料棒，所述燃料棒具有锁定支撑套筒，所述锁定支撑套筒可在支撑单元之间旋转， 第一和第二方向。 在第一方向上，锁定支撑套分别松动地配合在基座的支撑单元内，并且分别宽松地容纳加载在其中的燃料棒。 然后将锁定支撑套筒旋转到第二取向，将燃料棒轴向地锁定在支撑单元内。

公开(公告)号：US20140314967A1

公开(公告)日：2014-10-23

申请号：US14358026

申请日：2011-11-14

申请人： Xiaoming Wu ,  Yong Lu ,  Hong Liu ,  Yinfeng Wu ,  Qianyuan Liu

发明人： Xiaoming Wu ,  Yong Lu ,  Hong Liu ,  Yinfeng Wu ,  Qianyuan Liu

IPC分类号： H05K3/28 ,  C09D5/08

CPC分类号： C09D5/086 ,  C23C22/60 ,  C23C22/68 ,  H05K3/282 ,  H05K2203/0786 ,  H05K2203/0793

摘要： The present invention relates to a water-based pore sealing agent enhancing PCB coating anti-oxidation and anti-corrosion properties, consisting of, by weight, 4-12 parts of a corrosion inhibitor, 15-25 parts of a mixed surfactants system, 10-20 parts of an ion chelating agent, 6-15 parts of a pH regulator, 20-40 parts of a builder, and the rest being purified water. When used to perform pore sealing on a PCB, the water-based pore sealing agent is diluted with purified water first to be diluted 10-100 times, preferably, 100/8-100/3 times. The pH value is 7-11, and is preferably 7.5-9.5. The surface tension is 18-28 dyn/cm. The pore sealing treatment uses a immersion process, and preferably ultrasonic waves are added at the same time to assist in cleaning the pores. For the pore sealing treatment, the temperature is 20-60° C., and the time is 60-150 seconds. After pore sealing, the temperature for drying the coated piece is 80-150° C., and the time is 60-120 seconds. The PCB treated with the water-based pore sealing agent of the present invention undergoes the neutral salt spray test, the nitric acid vapor test, the mixed gas test, and the sulfur dioxide and bonding tensile strength test, and the results have indicated that the anti-oxidation and anti-corrosion properties of the coating thereof are significantly enhanced.

摘要翻译： 本发明涉及一种提高PCB涂层抗氧化和抗腐蚀性能的水性密封剂，由重量比为4-12份的缓蚀剂组成，15-25份混合表面活性剂体系，10 -20份离子螯合剂，6-15份pH调节剂，20-40份助洗剂，其余为纯化水。 当用于在PCB上进行孔密封时，首先用净化水稀释水基密封剂以稀释10-100倍，优选为100 / 8-100 / 3倍。 pH值为7-11，优选为7.5-9.5。 表面张力为18-28dyn / cm。 孔密封处理使用浸渍法，优选同时加入超声波以辅助清洁毛孔。 对于孔密封处理，温度为20-60℃，时间为60-150秒。 孔密封后，涂层的干燥温度为80-150℃，时间为60-120秒。 用本发明的水性密封剂处理的PCB经过中性盐雾试验，硝酸蒸汽试验，混合气体试验，二氧化硫和接合拉伸强度试验，结果表明， 其涂层的抗氧化和抗腐蚀性能显着提高。