-
公开(公告)号：US20110118483A1
公开(公告)日：2011-05-19
申请号：US12927896
申请日：2010-11-29
申请人： Tobin J. Marks , Antonio Facchetti
发明人： Tobin J. Marks , Antonio Facchetti
IPC分类号： C07D409/14
CPC分类号： H01B1/128 , C08G61/126 , H01B1/127 , H01L27/32 , H01L51/0008 , H01L51/001 , H01L51/0036 , H01L51/0068 , H01L51/0508 , H01L51/0512 , H01L51/0541 , H01L51/0545
摘要： The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
摘要翻译： 新的氟碳官能化和/或杂环改性的聚噻吩，特别是α，ω-二全氟己基硫氧化物DFH-6T可以以高产率和纯度直接制备。 引入噻吩核心的这种修饰提供了增强的热稳定性和挥发性，并且相对于现有技术的未改性组合物提高了电子亲和力。 蒸发膜表现为n型半导体，可用于制造FET迁移率〜0.01cm2 / Vs的薄膜晶体管，这是迄今为止报道的n型有机半导体的最高值。
-
公开(公告)号：US07928249B2
公开(公告)日：2011-04-19
申请号：US12221123
申请日：2008-07-31
申请人： Tobin J. Marks , Antonio Facchetti , Hakan Usta
发明人： Tobin J. Marks , Antonio Facchetti , Hakan Usta
IPC分类号： C07D409/00
CPC分类号： C07C49/697 , C07C17/12 , C07C45/46 , C07C45/63 , C07C45/65 , C07C49/665 , C07C255/34 , C07C255/35 , C07C2603/10 , C07C2603/52 , C07D333/22 , C07D333/24 , C07D333/28 , C08G61/02 , C08G61/12 , C08G61/123 , C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0051 , H01L51/0055 , H01L51/0068 , H01L51/0545 , Y02E10/549 , C07C25/02
摘要： Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions.
摘要翻译： 公开了包括可用于制备半导体材料的梯型部分的新的共轭化合物（例如单体和聚合物）。 这种共轭化合物可表现出高的n型载流子迁移率和/或良好的电流调制特性。 本发明的化合物还可以显示出双极半导体活性。 此外，本发明的化合物可以具有某些加工优点，例如在环境条件下的溶液加工性和/或良好的稳定性。
-
83.发明申请公开(公告)号：US20110024729A1
公开(公告)日：2011-02-03
申请号：US12763495
申请日：2010-04-20
IPC分类号： H01L51/10
CPC分类号： H01L51/052 , C08K5/5415 , C08K5/544 , H01B3/30
摘要： Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.
摘要翻译： 提供了可溶解的介电材料以及前体组合物及其制备方法。 还提供了包括电介质材料的复合材料和电子器件。
-
84.发明申请ORGANIC PHOTOVOLTAIC DEVICE WITH INTERFACIAL LAYER AND METHOD OF FABRICATING SAME 有权具有界面层的有机光电装置及其制造方法公开(公告)号：US20100252113A1
公开(公告)日：2010-10-07
申请号：US12771376
申请日：2010-04-30
申请人： Tobin J. Marks , Alexander W. Hains
发明人： Tobin J. Marks , Alexander W. Hains
CPC分类号： H01L51/0094 , B82Y10/00 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0047 , H01L51/4253 , Y02E10/549
摘要： An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5′-bis [(p-trichlorosilylpropylphenyl) phenylamino]-2,2′-bithiophene (PABTSi2).
摘要翻译： 一种有机光伏器件及其形成方法。 在一个实施例中，有机光伏器件具有阳极，阴极，设置在阳极和阴极之间的有源层; 以及设置在阳极和活性层之间的界面层，界面层包含5,5'-双[（对三氯甲硅烷基丙基苯基）苯基氨基] -2,2'-二噻吩（PABTSi 2）。
-
85.发明申请Organic Electro-Optic Modulators with Transparent Conducting Electrodes and Related Device Structures 有权具有透明导电电极和相关器件结构的有机电光调制器公开(公告)号：US20100098424A1
公开(公告)日：2010-04-22
申请号：US12582518
申请日：2009-10-20
申请人： Seng-Tiong Ho , Fei Yi , Tobin J. Marks
发明人： Seng-Tiong Ho , Fei Yi , Tobin J. Marks
CPC分类号： G02F1/065 , G02F1/0018 , G02F1/2255 , G02F2201/122 , G02F2202/02
摘要： Electro-optic (EO) modulator and related device structures which can be used in conjunction with high EO materials to lower switching voltage and improve related performance parameters.
摘要翻译： 电光（EO）调制器和相关的器件结构，可与高EO材料结合使用，以降低开关电压并改善相关性能参数。
-
86.发明申请公开(公告)号：US20100024883A1
公开(公告)日：2010-02-04
申请号：US12563680
申请日：2009-09-21
申请人： Tobin J. Marks , Antonio Facchetti , Gang Lu , Hakan Usta , Joseph Letizia
发明人： Tobin J. Marks , Antonio Facchetti , Gang Lu , Hakan Usta , Joseph Letizia
IPC分类号： H01L31/0256 , C08G77/60 , H01L51/30
CPC分类号： H01L51/0094 , H01L51/0508 , Y02E10/549 , Y10T428/31504
摘要： The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R1, R2, R3, R4, R5R6, Z, x, and x′ are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.
摘要翻译： 本教导提供可用作p型半导体的基于硅烷的聚合物。 更具体地，本发明提供了包含式I的重复单元的聚合物：其中R1，R2，R3，R4，R5R6，Z，x和x'如本文所定义。 本教导还提供制备这些聚合物的方法，并涉及结合这些聚合物的各种组合物，复合材料和装置。
-
87.发明授权公开(公告)号：US07651777B1
公开(公告)日：2010-01-26
申请号：US10254335
申请日：2002-09-25
IPC分类号： B32B15/04
CPC分类号： G02F1/065 , G02F1/3612 , G02F1/3614 , G02F1/37
摘要： The preparation of robust, thin film materials with large second-order optical nonlinearities through the covalent self-assembly of chromophoric compositions and innovative use of silyl chemistry.
摘要翻译： 通过发色组合物的共价自组装和甲硅烷基化学的创新使用，制备具有大二阶光学非线性的坚固的薄膜材料。
-
公开(公告)号：US20090050876A1
公开(公告)日：2009-02-26
申请号：US12131697
申请日：2008-06-02
申请人： Tobin J. Marks , David B. Janes , Sanghyun Ju , Peide Ye , Chongwu Zhou , Antonio Facchetti
发明人： Tobin J. Marks , David B. Janes , Sanghyun Ju , Peide Ye , Chongwu Zhou , Antonio Facchetti
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/7869
摘要： Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
摘要翻译： 公开了具有高场效应迁移率的完全透明的纳米线晶体管。 本文公开的完全透明的纳米线晶体管包括一个或多个纳米线，由透明无机或有机材料制备的栅极电介质，以及制造在透明衬底上的透明源极，漏极和栅极触点。 本文公开的完全透明的纳米线晶体管也可以是机械灵活的。
-
89.发明申请公开(公告)号：US20080212914A1
公开(公告)日：2008-09-04
申请号：US11888503
申请日：2007-08-01
申请人： Tobin J. Marks , Seng-Tiong Ho , Jing Ma , Guoyang Xu
发明人： Tobin J. Marks , Seng-Tiong Ho , Jing Ma , Guoyang Xu
IPC分类号： G02F1/035
CPC分类号： G02F1/0018 , B82Y20/00 , G02F1/017 , G02F1/0316 , G02F1/035
摘要： New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.
摘要翻译： 新的电光（EO）相位调制器器件和几何形状，可以使用透明导电元件构造。
-
90.发明申请Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same 有权制备芳烃-BIS（二甲酰亚胺）基半导体材料及其相关中间体的制备方法公开(公告)号：US20080177073A1
公开(公告)日：2008-07-24
申请号：US12006934
申请日：2008-01-07
申请人： Antonio Facchetti , Tobin J. Marks , He Yan
发明人： Antonio Facchetti , Tobin J. Marks , He Yan
IPC分类号： C07D471/22 , C07D311/78 , C07D209/56 , C07D307/77
CPC分类号： C07D491/06 , C07D471/06 , C07D487/04 , C09B5/62 , C09B57/08
摘要： The present teachings provide compounds of formulae I and II: where Q, Ra, R1, W, and n are as defined herein. The present teachings also provide methods of preparing compounds of formulae I and II, including methods of preparing compounds of formula II from compounds of formula I. The compounds disclosed herein can be used to prepare semiconductor materials and related composites and electronic devices.
摘要翻译： 本发明提供式I和II化合物：其中Q，R a，R 1，W和n如本文所定义。 本教导还提供制备式I和II化合物的方法，包括由式I化合物制备式II化合物的方法。本文公开的化合物可用于制备半导体材料及相关复合材料和电子器件。
-
-
-
-
-
-
-
-
-
搜索结果
191 条记录 (耗时 0.044 秒)
