公开(公告)号：US5229964A

公开(公告)日：1993-07-20

申请号：US617873

申请日：1990-11-26

申请人： Hiroyuki Yamauchi

发明人： Hiroyuki Yamauchi

IPC分类号： G11C11/413 ,  C21C5/40 ,  G11C11/407 ,  G11C11/409 ,  G11C11/4091 ,  G11C11/4096 ,  G11C11/419 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： G11C11/4096 ,  G11C11/4091

摘要： A circuit for reading and writing data to/from memory cells of a DRAM, based upon sense amplifiers formed of N-type and P-type FETs for each pair of bit lines of the DRAM and column switches formed of FETs for transferring data potentials to/from the bit line pairs, in which the current drive capability of the column switches is increased relative to the sense amplifiers during each write cycle and the current drive capability of the sense amplifiers is increased relative to that of the column switches during each read cycle, thereby ensuring satisfactory read and write operation even for a very large-scale DRAM operating with a low value of supply voltage.

摘要翻译： 基于用于DRAM的每对位线的N型和P型FET形成的读出放大器和用于将数据电位传送到FET的由FET形成的列开关的用于从DRAM的存储单元读取/写入数据的电路 来自位线对，其中列开关的当前驱动能力在每个写周期期间相对于读出放大器增加，并且读出放大器的当前驱动能力相对于每个读周期中的列开关的驱动能力增加 ，从而即使对于具有低电源电压的非常大规模的DRAM进行操作，也能确保令人满意的读写操作。

公开(公告)号：US5051957A

公开(公告)日：1991-09-24

申请号：US462538

申请日：1990-01-03

申请人： Hiroyuki Yamauchi

发明人： Hiroyuki Yamauchi

IPC分类号： G11C7/06

CPC分类号： G11C7/062 ,  G11C7/065

摘要： A sense amplifier circuit for a semiconductor memory includes a flip-flop coupled to a pair of bit lines connected to memory cells, for amplifying a differential read voltage produced between the bit lines, and at least two switches for applying respectively different levels of drive voltage to a common node of the flip-flop. The switches are controlled such as to apply a relatively high value of drive voltage to the common node when a read operation is initiated, to thereby initially provide a high charging current to the bit line capacitance, and thereafter supply a lower value of drive voltage to thereby ensure reliability of the memory cell oxide film.

摘要翻译： 用于半导体存储器的读出放大器电路包括耦合到连接到存储器单元的一对位线的触发器，用于放大在位线之间产生的差分读取电压，以及至少两个开关，分别施加不同级别的驱动电压 到触发器的公共节点。 控制这些开关，以便在开始读取操作时向公共节点施加相对较高的驱动电压值，从而首先向位线电容提供高充电电流，然后将较低的驱动电压值提供给 从而确保记忆单元氧化膜的可靠性。

公开(公告)号：US4920517A

公开(公告)日：1990-04-24

申请号：US182895

申请日：1988-04-18

申请人： Hiroyuki Yamauchi ,  Toshio Yamada ,  Michihiro Inoue

发明人： Hiroyuki Yamauchi ,  Toshio Yamada ,  Michihiro Inoue

IPC分类号： G11C11/4097

CPC分类号： G11C11/4097

摘要： A dynamic random access memory which includes a memory cell array, sense amplifiers disposed at both side of the memory cell array, and sub bit lines coupled to the sense amplifiers. The sub bit lines are coupled to data busses through middle amplifiers. By use of such memory architecture, higher integration of DRAM can be realized. Also, handling of super large bit data more than 1024 bit becomes possible.

摘要翻译： 一种动态随机存取存储器，其包括存储单元阵列，设置在存储单元阵列两侧的读出放大器以及耦合到读出放大器的子位线。 子位线通过中间放大器耦合到数据总线。 通过使用这种存储器架构，可以实现DRAM的更高集成度。 而且，超大于1024位的超大位数据的处理成为可能。

公开(公告)号：US4904888A

公开(公告)日：1990-02-27

申请号：US253216

申请日：1988-10-03

申请人： Hiroyuki Yamauchi ,  Toshio Yamada

发明人： Hiroyuki Yamauchi ,  Toshio Yamada

IPC分类号： G11C11/409 ,  G01R19/00 ,  G11C7/06 ,  H03K17/10 ,  H03K17/14

CPC分类号： G11C7/065 ,  H03K17/102 ,  H03K17/145

摘要： In order to enhance the sensitivity of a sense amplifier circuit, each one of the transistor pair composing the sense amplifier circuit is formed by transistors connected parallel in an even number of stages, and therefore the sense amplifier circuit is made of transistor pair having an extremely balanced characteristic, cancelling the asymmetricity of current-voltage characteristic of the transistor pair to null.

摘要翻译： 为了提高读出放大器电路的灵敏度，构成读出放大器电路的晶体管对中的每一个由以偶数个级并联连接的晶体管形成，因此读出放大器电路由具有极高的晶体管对 平衡特性，消除晶体管对的电流 - 电压特性的不对称性为零。

公开(公告)号：US07749950B2

公开(公告)日：2010-07-06

申请号：US11480410

申请日：2006-07-05

申请人： Masanori Ukai ,  Hiroyuki Yamauchi ,  Yasuhisa Imanishi

发明人： Masanori Ukai ,  Hiroyuki Yamauchi ,  Yasuhisa Imanishi

IPC分类号： C11D1/00 ,  B32B18/00

CPC分类号： C09D4/00 ,  C04B14/062 ,  C04B18/146 ,  C04B41/009 ,  C04B41/5089 ,  C04B41/52 ,  C04B41/68 ,  C04B41/71 ,  C04B2111/2038 ,  Y02W30/94 ,  Y02W30/97 ,  Y10T442/2279 ,  C04B41/46 ,  C04B2103/408 ,  C04B41/463 ,  C04B41/4876 ,  C04B41/502 ,  C04B41/483 ,  C04B41/522 ,  C04B18/26 ,  C04B28/18

摘要： An object of the present invention is to provide a durable excellent stain-proofing property to the surface of a coating formed on a substrate surface of a building board without deteriorating the surface of the coating. The present invention also, provides a stain-proofing agent containing silica fine particles, an aqueous solvent and, as a stain-proofing improver, an alkali metal compound and/or an alkaline earth metal compound and/or a phosphorus compound and/or a clay mineral. The present invention also provides a building board having an excellent stain-proofing property prepared by applying a coating composition onto the surface of a substrate to form a coat, and then applying a stain-proofing agent onto the coat while the coat is in an unhardened state or applying a stain-proofing agent onto the coat after subjecting the coat to a roughening treatment to enhance the adhesion of the stain-proofing layer to the coat.

摘要翻译： 本发明的目的是提供一种耐久性优异的防污染性能，而不会使涂层的表面劣化，从而在建筑板的基板表面上形成的涂层的表面具有良好的耐污染性。 本发明还提供了含有二氧化硅微粒，水性溶剂和作为防污改良剂的碱金属化合物和/或碱土金属化合物和/或磷化合物和/或 粘土矿物。 本发明还提供了一种建筑板，其具有通过将涂料组合物涂布在基材表面上以形成涂层而制备的优异的防污性，然后在涂层处于未硬化的同时将防污剂施加到涂层上 在使涂层进行粗糙化处理以增强防污层与涂层的粘附性之后，将涂布防污剂施加到涂层上。

公开(公告)号：US07379318B2

公开(公告)日：2008-05-27

申请号：US11085579

申请日：2005-03-22

申请人： Hiroyuki Yamauchi

发明人： Hiroyuki Yamauchi

IPC分类号： G11C17/10 ,  G11C11/41

CPC分类号： H01L27/105 ,  G11C17/12

摘要： A semiconductor integrated circuit device includes a semiconductor substrate and a ROM region, an SRAM region and a peripheral circuit region which are formed on the semiconductor substrate. Further, a column switch region is provided adjacent to the ROM region. MOS transistors in the ROM region and channel regions of access transistors in the SRAM region have substantially the same p-type impurity concentration. Accordingly, the threshold voltages of the transistors are adjusted by making use of the great dependence of the threshold voltage of the transistor on the channel width.

摘要翻译： 半导体集成电路器件包括形成在半导体衬底上的半导体衬底和ROM区域，SRAM区域和外围电路区域。 此外，在ROM区域附近设置列开关区域。 ROM区域中的MOS晶体管和SRAM区域中的存取晶体管的沟道区域具有基本上相同的p型杂质浓度。 因此，通过利用晶体管的阈值电压对通道宽度的很大依赖性来调节晶体管的阈值电压。

公开(公告)号：US20080011168A1

公开(公告)日：2008-01-17

申请号：US11600281

申请日：2006-11-16

申请人： Hiroyuki Yamauchi ,  Tomoyoshi Yabe

发明人： Hiroyuki Yamauchi ,  Tomoyoshi Yabe

IPC分类号： B41F17/00

CPC分类号： B41J3/407

摘要： Horizontal joint portions of abutting building boards are constructed in a manner to look straight-line in an external appearance when constructed even in a case that the building board has a dimension error. A printing apparatus for printing a building board of a shiplap joint system composed of a design surface having a horizontal joint portion formed along a longitudinal direction of the building board and an upper and lower shiplap portions formed at an end portion of the building board includes a fixed printing head having a plurality of nozzles for performing printing operation by means of emitting a jet of ink toward the design surface of the building board, in which the printing head performs printing operation along a printing line spaced apart from an edge of the upper shiplap portion or the lower shiplap portion at a constant distance when performing the printing operation for the horizontal joint portion.

摘要翻译： 邻接建筑板的水平接合部分，即使在建筑板具有尺寸误差的情况下构造成外观看起来也是直线的。 一种用于印刷由沿着建筑板的纵向形成的具有水平接合部分的设计表面和形成在建筑物板的端部处的上部和下部遮光部分的设计表面组成的遮蔽物接合系统的建筑板的印刷设备包括： 固定式打印头具有多个喷嘴，用于通过向构建板的设计表面喷射墨水来执行打印操作，其中打印头沿着与上部shiplap的边缘间隔开的打印线执行打印操作 在执行水平接合部的打印操作时，以恒定的距离对部分或下部遮光部进行处理。

公开(公告)号：US07187596B2

公开(公告)日：2007-03-06

申请号：US11097359

申请日：2005-04-04

申请人： Hiroyuki Yamauchi

发明人： Hiroyuki Yamauchi

IPC分类号： G11C5/14

CPC分类号： G11C5/145 ,  G11C8/08

摘要： A semiconductor system includes a plurality of memory systems (SARM, ROM, etc.) and circuit systems. The semiconductor system further includes an analog power supply circuit which is common to the memory systems. The analog power supply circuit supplies a source potential to word line drivers of the memory systems. The source potential is set to a potential different from a ground potential and a supply voltage of the semiconductor system.

摘要翻译： 半导体系统包括多个存储器系统（SARM，ROM等）和电路系统。 半导体系统还包括对于存储器系统是共同的模拟电源电路。 模拟电源电路为存储器系统的字线驱动器提供源极电位。 源极电位被设定为与半导体系统的接地电位和电源电压不同的电位。

公开(公告)号：US20070002662A1

公开(公告)日：2007-01-04

申请号：US11476566

申请日：2006-06-29

申请人： Yoshinobu Yamagami ,  Hiroyuki Yamauchi

发明人： Yoshinobu Yamagami ,  Hiroyuki Yamauchi

IPC分类号： G11C5/14

CPC分类号： G11C11/413

摘要： A semiconductor memory device, including a memory cell including a flip-flop, and a memory cell power supply circuit for supplying a cell power supply voltage to the memory cell, wherein the memory cell power supply circuit supplies a cell power supply voltage in a first period and a different cell power supply voltage in a second period.

摘要翻译： 一种半导体存储器件，包括具有触发器的存储单元和用于向存储单元提供单元电源电压的存储单元电源电路，其中存储单元电源电路将第一单元电源电压 周期和不同的单元电源电压。

公开(公告)号：US20060232341A1

公开(公告)日：2006-10-19

申请号：US11404802

申请日：2006-04-17

申请人： Motoyoshi Iwata ,  Hiroyasu Takehara ,  Hiroyuki Yamauchi

发明人： Motoyoshi Iwata ,  Hiroyasu Takehara ,  Hiroyuki Yamauchi

IPC分类号： H03F3/04

CPC分类号： H03F3/04 ,  H03F1/0261 ,  H03F1/302 ,  H03F3/189 ,  H03F2200/387

摘要： There are provided an RF power amplifier transistor (2), a bias supply circuit (51) which supplies a bias current to the base of the RF power amplifier transistor and a bias control circuit (52) connected between the base of the RF power amplifier transistor and bias supply circuit, and the bias control circuit is connected to the power supply (32) of the RF power amplifier transistor, thus realizing high efficiency of the RF power amplifier when the power level is low and improving the temperature characteristic of the power amplifier when the power level is low.

摘要翻译： 提供了RF功率放大器晶体管（2），向RF功率放大器晶体管的基极提供偏置电流的偏置电源电路（51）和连接在RF功率放大器的基极之间的偏置控制电路（52） 晶体管和偏置电源电路，并且偏置控制电路连接到RF功率放大器晶体管的电源（32），从而在功率电平低时实现RF功率放大器的高效率并且提高功率的温度特性 功率电平低时的放大器。