摘要:
In a projection exposure apparatus and method, the intensity distribution of illumination light for detecting an imaging characteristic of a projection optical system is set substantially equal to the intensity distribution of exposure illumination light. The intensity distribution of a secondary light source in an exposure illumination optical system is changed in accordance with a pattern of a mask. Magnification and aberration of the projection optical system are adjusted in accordance with the changed intensity distribution of the secondary light source. A substrate stage is moved along an optical axis of the projection optical system to compensate movement of the image plane of the projection optical system caused by a change in the intensity distribution of the secondary light source. An exposure operation is interrupted when a light amount distribution is changed. Exposure control is also responsive to thermal accumulation in the projection optical system.
摘要:
Illuminating light at a pupil plane of an illumination optical system for illuminating a position detection mark on a substrate is limited to an annular area centered at an optical axis, and a member substantially blocks an image-forming light beam distributed over an area on a pupil plane of an image-forming optical system for forming an image of the position detection mark on an imaging device by receiving light generated from the mark, the area being in image-forming relation to the annular area on the pupil plane of the illumination optical system. Alternatively, a member gives a phase difference of approximately .pi./2 �rad! between the image-forming light beam distributed over the area which is in image-forming relation to the annular area on the pupil plane of the illumination optical system and the image-forming light beam distributed over the area other than that area. The outer radius r.sub.o and inner radius r.sub.i of the annular area on the pupil plane of the illumination optical system are determined so as to satisfy the following conditions: ##EQU1## where .lambda.1 is the shortest wavelength in the wave band of illuminating light contributing to the formation of an image signal, .lambda.2 is the longest wavelength in the wave band, and P is the period of the position detection mark.
摘要:
A diffraction grating is set between a light source and a fly-eye lens composed of a plurality of lens elements rectangular in cross section, and using the zeroth order diffraction beam and .+-.first order diffraction beams emergent from the diffraction grating, a plurality of light source images are formed along the longitudinal direction on the exit plane of each lens element in the fly-eye lens. In a preferred mode the intensity of illumination light on a mask is increased using first and second light sources, and a first illumination beam, which is obtained by combining a beam emitted from the first light source and passing through a half prism with a beam emitted from the second light source and reflected by the half prism on a same axis, and a second illumination beam, which is obtained by combining a beam emitted from the first light source and reflected by the half prism with a beam emitted from the second light source and passing through the half prism on a same axis, are made incident into the fly-eye lens as being inclined symmetrically with each other with respect to the optical axis of illumination optical system.
摘要:
Methods and apparatus are disclosed for performing detection of the position of a substrate, such as used in photolithography, with high precision by zero Nth-order detection. Alignment marks (grating marks) on the substrate are illuminated by coherent light beams comprising multiple wavelength components. Reflected light forms diffraction patterns that are detected by appropriate detectors. At least one level-difference detection circuit and at least one detected-position-correction circuit are provided, the former detecting grating-mark positions grating mark positions .DELTA.Xn' at respective wavelengths from light-quantity signals produced from the detectors, and the latter calculating relative level differences .delta..sub.n for the respective wavelengths at each grating mark, based on changes in the light-quantity signals accompanying relative scanning and based on design data for the grating marks. The apparatus also comprises a third circuit that calculates "final" positions of the grating marks by applying a factor corresponding to a situation resulting in the least amount of positional error to the positional determination as would otherwise be affected by asymmetry or resist-thickness variations of the grating mark.
摘要:
A projection exposure apparatus having an illuminating system for irradiating a mask, which has a pattern, with illuminating light for exposure, and a projection optical system for projecting an image of the mask pattern onto a photosensitive substrate with predetermined image-forming characteristics under the illuminating light. The apparatus is provided with an optical filter changing member for selecting one of a plurality of optical filters that change at least one of optical characteristics of light from the mask by respective amounts which are different from each other. The optical characteristics include an amplitude distribution, a phase distribution and a condition of polarization. The optical filter changing member further disposes the selected optical filter on a pupil plane in the projection optical system or on a plane in the neighborhood of the pupil plane. The apparatus is further provided with a correcting member-changing member for selecting one of a plurality of image-forming characteristic correcting members that correct the image-forming characteristics of the projection optical system by respective amounts which are different from each other in accordance with the optical filter selected by the optical filter changing member, and for disposing the selected image-forming characteristic correcting member between the mask and the substrate.
摘要:
An exposure apparatus for reproducing a mask pattern onto a photo-sensitive surface of a substrate using holographic techniques. The apparatus comprises support means for holding a hologram recording plate at a predetermined position both during recording operation and reconstructing operation, a first illuminating optical system for introducing a light beam from a coherent light source to a mask and irradiating a subject beam produced from the mask into the recording plate, a second illuminating optical system for irradiating the light beam from the coherent light source as a reference beam into the recording plate, a carrier apparatus for disposing during reconstructing operation a substrate at the position of the mask in place of the mask, a third illuminating optical system for irradiating a conjugate beam with the reference beam into the recording plate, in which a hologram has been formed by recording operation, to form an image of the hologram on the photo-sensitive surface of the substrate, and a controller for selectively controlling the first, second and third illuminating optical systems to put an at least selected one of them into an operative condition so as to irradiate a fixing light beam into the recording plate in order to fix the hologram.
摘要:
A projection exposure apparatus having an irradiation optical system for irradiating a pattern formed on a mask with first irradiation light, a projection optical system for imaging and projecting the image of the pattern of the mask onto a photosensitive substrate, and a mark detection device for irradiating a predetermined mark formed on the photosensitive substrate with second irradiation light in a wavelength region which is different from that of the first irradiation light by the projection optical system and detecting light generated from the mark, the projection exposure apparatus including: a deflection member disposed on a pupil surface of the projection optical system or in a periphery in an adjacent plane of the same, shielding a beam, which is a portion of the first irradiation light generated from the mask and incident on the projection optical system, and which passes through the peripheral portion of the pupil surface of the projection optical system, deflecting the second irradiation light by a predetermined quantity and passing the deflected second irradiation light, wherein the mark detection device includes an irradiation system for emitting the second irradiation light to travel toward the deflection member.
摘要:
An exposure apparatus for exposing on a substrate a pattern formed on a mask, comprises a projection optical system for forming the pattern on a predetermined focusing plane and projecting an image of the pattern on the substrate located to be substantially aligned with the focusing plane, driving means for three-dimensionally moving the mask or at least one of a plurality of optical system, or for inclining the mask or said at least one of the plurality of optical members with respect to a plane substantially perpendicular to an optical axis of the projection optical system and correcting means for driving the driving means to anisotropically change optical characteristics of the projection optical system so that the projected image of the pattern is matched with a pattern already formed on the substrate.
摘要:
An exposure method provided is a high-resolution and inexpensive method suitable for use in formation of a fine pattern for making up an electronic device. A diffraction grating is located in proximity to a wafer or the like for making up an electronic device, and illumination light with a predetermined incidence angle property is applied onto the diffraction grating to effect exposure on the wafer. The exposure is done while changing a positional relation between the semiconductor wafer and the diffraction grating according to need.
摘要:
An object is to provide a high-resolution and economical exposure method suitable for use in formation of a fine pattern for making up an electronic device. Two diffraction gratings (P1, P2) are located in series in an optical path; the two diffraction gratings (P1, P2) and a wafer or the like (W) for making up an electronic device are arranged with a predetermined spacing; a light-dark pattern of interference fringes generated by the diffraction gratings (P1, P2) is transferred onto the wafer or the like (W) to effect exposure. The exposure is done while changing a positional relation between the wafer or the like (W) and the diffraction gratings (P1, P2) according to need.