公开(公告)号：US06245930B1

公开(公告)日：2001-06-12

申请号：US09317208

申请日：1999-05-24

申请人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

发明人： Katsumi Oomori ,  Hideo Hada ,  Fumitake Kaneko ,  Mitsuru Sato ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC分类号： C07C25500

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formula R1—C(CN)═N—O—SO2—R2, in which R1 is an inert organic group and R2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.

摘要翻译： 提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。 特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂， R 1为惰性有机基团，R2为未取代或取代的选自多环芳烃基如萘基和多环非芳族烃基如萜烯或樟脑残基的多环一价烃基。

公开(公告)号：US06214104B1

公开(公告)日：2001-04-10

申请号：US08692005

申请日：1996-08-02

申请人： Hiroyuki Iida ,  Hiroki Endo ,  Hideya Kobari ,  Yoshio Hagiwara ,  Toshimasa Nakayama

发明人： Hiroyuki Iida ,  Hiroki Endo ,  Hideya Kobari ,  Yoshio Hagiwara ,  Toshimasa Nakayama

IPC分类号： B05D712

CPC分类号： C09D4/00 ,  C08G77/04

摘要： A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.

摘要翻译： 在第一旋转模式中以低速旋转涂布溶液滴落到其上的基板，然后在第二旋转模式中以高速度在一段时间之后旋转。 在第一旋转模式结束时，将涂布溶液涂覆到基板上的不规则部分上的厚度大于给定厚度，例如双图案和全局图案，涂布溶液的涂布厚度小于给定厚度 在双胞胎之间。 随后，在第二旋转模式开始时，涂覆在双模式上的涂布溶液和全局图案流入这些图案之间的空间。 在第二旋转模式结束时，两个图案上的涂布溶液的厚度几乎为零，并且全局图案上的涂布溶液的厚度整体上小，但是其中心区域 全球格局。

公开(公告)号：US06207340B1

公开(公告)日：2001-03-27

申请号：US09541020

申请日：2000-03-31

申请人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Masaki Kurihara ,  Satoshi Niikura ,  Miki Kobayashi ,  Kousuke Doi ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： G03F7021

CPC分类号： G03F7/022 ,  G03F7/0226

摘要： A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

公开(公告)号：US06136505A

公开(公告)日：2000-10-24

申请号：US330001

申请日：1999-06-11

申请人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Hiroshi Komano ,  Toshimasa Nakayama

发明人： Masahito Tanabe ,  Kazumasa Wakiya ,  Masakazu Kobayashi ,  Hiroshi Komano ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/091

摘要： Disclosed herein is a liquid coating composition for use in forming an antireflective film comprising a mixture of a cyclic perfluoroalkyl polyether and a chain perfluoroalkyl polyether in a ratio of from 3:10 to 10:1 by weight, and a fluorocarbon organic solvent. Disclosed also herein is a photoresist material consisting of a photoresist layer and said antireflective film formed thereon using said liquid coating composition. The antireflective film remarkably reduces the standing-wave effect especially in the case where the photoresist layer of chemically amplified type is used. The antireflective film also has good film quality and film removability.

摘要翻译： 本文公开了一种用于形成抗反射膜的液体涂料组合物，其包含按重量比计为3:10至10:1的环状全氟烷基聚醚和链全氟烷基聚醚的混合物，以及氟碳有机溶剂。 此处还公开了由光致抗蚀剂层和在其上使用所述液体涂料组合物形成的所述抗反射膜组成的光致抗蚀剂材料。 抗反射膜特别是在使用化学放大型光致抗蚀剂层的情况下，显着地降低了驻波效应。 抗反射膜也具有良好的膜质量和膜去除性。

公开(公告)号：US6106994A

公开(公告)日：2000-08-22

申请号：US210716

申请日：1998-12-14

申请人： Satoshi Niikura ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Satoshi Niikura ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： C07C303/28 ,  C07C309/76 ,  G03F7/022 ,  G03C1/492 ,  C07C50/08 ,  C07C303/00

CPC分类号： C07C303/28 ,  G03F7/022

摘要： A process for producing a polyphenol diester comprises esterifying a polyphenol compound and a naphthoquinone-1,2-diazidesulfonyl halide in the presence of for example monomethyldicyclohexylamine, and a positive photosensitive composition contains the resultant ester. According to this process, a diester of any polyphenol compound can be obtained with ease in a good yield, and a composition using the diester can achieve a high definition and a satisfactory exposure margin.

摘要翻译： 一种生产多酚二酯的方法包括在例如单甲基二环己基胺的存在下酯化多酚化合物和萘醌-1,2-二氮杂磺酰卤，并且正性感光组合物含有所得的酯。 根据该方法，可以容易地以良好的收率获得任何多酚化合物的二酯，并且使用二酯的组合物可以实现高清晰度和令人满意的曝光余量。

公开(公告)号：US5856058A

公开(公告)日：1999-01-05

申请号：US660378

申请日：1996-06-07

申请人： Kazufumi Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Yoshika Sakai ,  Toshimasa Nakayama

发明人： Kazufumi Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Yoshika Sakai ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/039 ,  G03F7/09 ,  H01L21/027 ,  G03F7/023

CPC分类号： G03F7/0226 ,  G03F7/022 ,  G03F7/091

摘要： Proposed is a novel chemical sensitization-type positive-working photoresist composition used for the photolithographic patterning works in the manufacture of semiconductor devices exhibiting an excellent halation-preventing effect in the patternwise exposure to light. The composition comprises, in addition to conventional ingredients including an acid-generating agent capable of releasing an acid by the irradiation with actinic rays and a resinous ingredient capable of being imparted with increased solubility in an aqueous alkaline developer solution in the presence of an acid, a unique halation inhibitor which is an esterification product between a specified phenolic compound and a naphthoquinone-1,2-diazide sulfonic acid.

摘要翻译： 提出了一种新型化学增感型正性光致抗蚀剂组合物，用于制造在图案曝光中具有优异的防晕效果的半导体器件中的光刻图案化工作。 该组合物除了包括能够通过光化射线照射释放酸的酸产生剂和能够在酸存在下在碱性显影剂水溶液中赋予增加的溶解性的树脂成分之外， 一种独特的卤化抑制剂，它是指定的酚类化合物与萘醌-1,2-二叠氮磺酸之间的酯化产物。

公开(公告)号：US5854357A

公开(公告)日：1998-12-29

申请号：US20411

申请日：1998-02-09

申请人： Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Etsuko Iguchi ,  Yoshika Sakai ,  Kazufumi Sato ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/039 ,  C08F8/00

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： A polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups.

摘要翻译： 聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。

公开(公告)号：US5817444A

公开(公告)日：1998-10-06

申请号：US927658

申请日：1997-09-11

申请人： Kazufumi Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Yoshika Sakai ,  Toshimasa Nakayama

发明人： Kazufumi Sato ,  Kazuyuki Nitta ,  Akiyoshi Yamazaki ,  Yoshika Sakai ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  H01L21/027

CPC分类号： G03F7/0045

摘要： Proposed is a novel chemical-sensitization positive-working photoresist composition suitable for fine patterning of a resist layer in the manufacture of electronic devices. The composition is advantageous in various properties of photoresist composition without little dependency on the nature of the substrate surface, on which the photoresist layer is formed, with or without an antireflection undercoating layer. The most characteristic ingredient in the inventive composition is the film-forming resinous ingredient which is a combination of a first polyhydroxystyrene resin substituted by tetrahydropyranyl groups for the hydroxyl groups and a second hydroxystyrene resin substituted by alkoxyalkyl groups for the hydroxyl groups in a specified weight proportion of the first and second resins.

摘要翻译： 提出了一种新颖的化学增感正性光致抗蚀剂组合物，适用于电子器件制造中抗蚀剂层的精细图案化。 该组合物在光致抗蚀剂组合物的各种性质方面是有利的，而对于在其上形成有光致抗蚀剂层的基底表面的性质几乎没有依赖性，具有或不具有抗反射底涂层。 本发明组合物中最具特色的成分是成膜树脂成分，其是由用于羟基的四氢吡喃基取代的第一聚羟基苯乙烯树脂和用特定重量比例的羟基的烷氧基烷基取代的第二羟基苯乙烯树脂 的第一和第二树脂。

公开(公告)号：US5795378A

公开(公告)日：1998-08-18

申请号：US935510

申请日：1997-09-23

申请人： Yoshinori Sakamoto ,  Yoshio Hagiwara ,  Toshimasa Nakayama

发明人： Yoshinori Sakamoto ,  Yoshio Hagiwara ,  Toshimasa Nakayama

IPC分类号： C08G77/06 ,  C08J3/09 ,  C09D183/04 ,  H01L21/316 ,  C09D183/06

CPC分类号： C08J3/095 ,  C08G77/06 ,  C09D183/04 ,  C08J2383/04

摘要： Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.

公开(公告)号：US5756255A

公开(公告)日：1998-05-26

申请号：US747567

申请日：1996-11-12

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  G03C1/825

CPC分类号： G03F7/091 ,  Y10S430/117 ,  Y10S430/124

摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.

摘要翻译： 提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。 本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c） （甲基）丙烯酸酯的不溶性树脂。