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公开(公告)号：US08399942B2
公开(公告)日：2013-03-19
申请号：US13253916
申请日：2011-10-05
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
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公开(公告)号：US08389301B2
公开(公告)日：2013-03-05
申请号：US13305668
申请日：2011-11-28
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.
摘要翻译： 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。
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83.发明申请Method and apparatus for measuring magnetic parameters of magnetic thin film structures 有权用于测量磁性薄膜结构磁参数的方法和装置公开(公告)号：US20120326712A1
公开(公告)日：2012-12-27
申请号：US13134925
申请日：2011-06-21
申请人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
发明人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： G01R33/02
CPC分类号： G01R33/093
摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.
摘要翻译： 高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。 薄膜样品可以无图案化。 探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个 磁膜堆中的层改变方向。 可以从不同电流频率的电压确定测得的谐振曲线。 通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。 在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。
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84.发明申请NON-VOLATILE MAGNETIC MEMORY WITH LOW SWITCHING CURRENT AND HIGH THERMAL STABILITY 有权具有低开关电流和高热稳定性的非易失性磁记忆体公开(公告)号：US20120205763A1
公开(公告)日：2012-08-16
申请号：US13455888
申请日：2012-04-25
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y10/00 , G11C11/161 , G11C11/1675 , H01L27/228
摘要： A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.
摘要翻译： 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层 膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。
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85.发明申请MAGNETIC RANDOM ACCESS MEMORY WITH FIELD COMPENSATING LAYER AND MULTI-LEVEL CELL 有权磁场随机访问存储器，具有现场补偿层和多级单元公开(公告)号：US20120205760A1
公开(公告)日：2012-08-16
申请号：US13029054
申请日：2011-02-16
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L29/66984 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。
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公开(公告)号：US20120170361A1
公开(公告)日：2012-07-05
申请号：US13345600
申请日：2012-01-06
IPC分类号： G11C11/14
CPC分类号： G06F12/0246 , G11C11/15 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C14/00 , H01L27/105 , H01L27/224
摘要： A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.
摘要翻译： 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。
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87.发明申请SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING GRADED SYNTHETIC FREE LAYER 有权具有分级合成自由层的转子扭矩磁性随机存取存储器（STTMRAM）公开(公告)号：US20120018823A1
公开(公告)日：2012-01-26
申请号：US13099308
申请日：2011-05-02
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.
摘要翻译： 自旋转矩存储器随机存取存储器（STTMRAM）元件能够在向其施加电流以存储数据时切换状态，并且包括以下层。 反铁磁层，形成在反铁磁层的顶部上的固定层，形成在固定层的第二磁性层顶部的阻挡层，以及形成在屏障顶部上的第一磁性层的自由层 形成在所述第一磁性层的顶部上的第二磁性层，形成在所述第二磁性层的顶部上的非磁性绝缘层和形成在所述非磁性绝缘层的顶部上的第三磁性层。 在非磁性绝缘层的顶部上形成覆盖层。
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公开(公告)号：US20110303998A1
公开(公告)日：2011-12-15
申请号：US13213026
申请日：2011-08-18
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/5607
摘要： A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.
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89.发明申请METHOD & APPARATUS FOR MULTI-STAGE SPUTTER DEPOSITION OF UNIFORM THICKNESS LAYERS 有权均匀厚度层的多阶段溅射沉积方法与装置公开(公告)号：US20110223445A1
公开(公告)日：2011-09-15
申请号：US12882053
申请日：2010-09-14
IPC分类号： G11B5/667
CPC分类号： G11B5/851 , C23C14/165 , C23C14/185 , C23C14/205 , C23C14/352 , C23C14/568
摘要： A method of forming a uniform thickness layer of a selected material on a surface of a substrate comprises steps of: (a) providing a multi-stage cathode sputtering apparatus comprising a group of spaced-apart cathode/target assemblies and a means for transporting at least one substrate/workpiece past each cathode/target assembly, each cathode/target assembly comprising a sputtering surface oriented substantially parallel to the first surface of the substrate during transport past the group of cathode/target assemblies, the group of cathode/target assemblies adapted for providing different angular sputtered film thickness profiles; and (b) transporting the substrate past each cathode/target assembly while providing different sputtered film thickness profiles from at least some of the cathode/target assemblies, such that a plurality of sub-layers is deposited on the surface of the substrate/workpiece which collectively form a uniform thickness layer of the selected material.
摘要翻译： 在衬底的表面上形成选定材料的均匀厚度层的方法包括以下步骤：（a）提供多级阴极溅射装置，其包括一组间隔开的阴极/靶组件和用于在 每个阴极/目标组件包括溅射表面，每个阴极/靶组件包括溅射表面，该溅射表面在输送通过阴极/靶组件组之前基本上平行于衬底的第一表面定向，该阴极/靶组件适于 用于提供不同的角溅射膜厚度轮廓; 并且（b）将衬底传送通过每个阴极/靶组件，同时从至少一些阴极/靶组件提供不同的溅射膜厚度分布，使得多个子层沉积在衬底/工件的表面上， 共同形成所选材料的均匀厚度层。
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公开(公告)号：US20080246104A1
公开(公告)日：2008-10-09
申请号：US11866830
申请日：2007-10-03
IPC分类号： H01L29/82
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
摘要： One embodiment of the present invention includes multi-state current-switching magnetic memory element including a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.
摘要翻译： 本发明的一个实施例包括多状态电流切换磁存储元件，其包括两个或多个磁隧道结（MTJ）的堆叠，每个MTJ具有自由层，并且通过形成的晶种层与堆叠中的其它MTJ分离 在隔离层上，用于存储多于一位的信息的堆栈，其中施加到存储器元件的不同电平的电流导致切换到不同的状态。
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