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    SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING GRADED SYNTHETIC FREE LAYER
    3.
    发明申请
    SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING GRADED SYNTHETIC FREE LAYER 有权
    具有分级合成自由层的转子扭矩磁性随机存取存储器（STTMRAM）

    公开(公告)号：US20120018823A1

    公开(公告)日：2012-01-26

    申请号：US13099308

    申请日：2011-05-02

    申请人： Yiming Huai ,  Rajiv Yadav Ranjan ,  Ioan Tudosa ,  Roger Klas Malmhall ,  Yuchen Zhou

    发明人： Yiming Huai ,  Rajiv Yadav Ranjan ,  Ioan Tudosa ,  Roger Klas Malmhall ,  Yuchen Zhou

    IPC分类号： H01L29/82

    CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.

    摘要翻译： 自旋转矩存储器随机存取存储器（STTMRAM）元件能够在向其施加电流以存储数据时切换状态，并且包括以下层。 反铁磁层，形成在反铁磁层的顶部上的固定层，形成在固定层的第二磁性层顶部的阻挡层，以及形成在屏障顶部上的第一磁性层的自由层 形成在所述第一磁性层的顶部上的第二磁性层，形成在所述第二磁性层的顶部上的非磁性绝缘层和形成在所述非磁性绝缘层的顶部上的第三磁性层。 在非磁性绝缘层的顶部上形成覆盖层。

    MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME
    4.
    发明申请
    MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
    具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法

    公开(公告)号：US20130119498A1

    公开(公告)日：2013-05-16

    申请号：US13737897

    申请日：2013-01-09

    申请人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

    发明人： Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Roger Klas Malmhall ,  Ioan Tudosa ,  Rajiv Yadav Ranjan

    IPC分类号： H01L43/02

    CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

    摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

    摘要翻译： 用于存储基于自由层的磁取向的状态的自旋转矩传递磁随机存取存储器（STTMRAM）元件，STTMRAM元件由包括第一垂直增强层（PEL）的第一垂直自由层（PFL） ）。 第一个PFL形成在种子层的顶部。 STTMRAM元件还包括形成在第一PFL的顶部上的阻挡层和具有第二PEL的第二垂直参考层（PRL），第二PRL形成在阻挡层的顶部上。 STTMRAM元件还包括形成在第二PRL的顶部上的封盖层。

    Magnetic random access memory with switching assist layer
    9.
    发明授权
    Magnetic random access memory with switching assist layer 有权
    具有开关辅助层的磁性随机存取存储器

    公开(公告)号：US08492860B2

    公开(公告)日：2013-07-23

    申请号：US13289372

    申请日：2011-11-04

    申请人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    发明人： Yuchen Zhou ,  Yiming Huai ,  Jing Zhang ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    IPC分类号： H01L29/82

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10

    摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

    摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化 反平行耦合。 在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且 第一自由层开关的磁化方向。 当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

    MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM)
    10.
    发明申请
    MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM) 有权
    磁性锁定磁条随机存取存储器（MRAM）

    公开(公告)号：US20120087185A1

    公开(公告)日：2012-04-12

    申请号：US13035857

    申请日：2011-02-25

    申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan ,  Roger Klas Malmhall

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/10

    摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

    摘要翻译： 自旋转移磁力随机存取存储器（STTMRAM）元件被配置为存储当电流被施加到其上时的状态。 STTMRAM元件包括第一和第二自由层，每个自由层具有定义STTMRAM元件的状态的相关联的磁化方向。 在向STTMRAM元件施加电流之前，第一和第二自由层的磁化方向各自在平面内，并且在向STTMRAM元件施加电流之后，第二自由层的磁化方向 变得基本上标题为平面外和第一自由层开关的磁化方向。 在断电的情况下，第二自由层的磁化方向保持在与第一自由层基本相反的方向。