公开(公告)号：US20130174664A1

公开(公告)日：2013-07-11

申请号：US13809984

申请日：2011-07-12

Applicant: Ib Svend Olesen

Inventor： Ib Svend Olesen

IPC: G01L1/00

CPC classification number: G01L1/005 ,  F03D17/00 ,  F03D80/40 ,  F05B2260/83 ,  F05B2260/845 ,  F05B2270/331 ,  F05B2270/802 ,  F05B2270/808 ,  G01L1/246 ,  G01M5/0016 ,  G01M5/0033 ,  G01M5/0091 ,  Y02E10/72 ,  Y02E10/722

Abstract: The invention provides a method and system of monitoring bending strain on a wind turbine blade. The method in one aspect comprises: locating at least three strain sensors on the turbine blade, in use each strain sensor providing a strain measurement, the strain sensors located such that edgewise and flapwise bending can be determined from the strain measurements; calculating a plurality of resultant bending strains using the strain measurements; calculating an average resultant bending strain from the plurality of resultant bending strains; and calculating a confidence value for a first sensor based on a comparison of resultant bending strains derived from the is strain measurement from the first sensor with the average resultant bending strain

Abstract translation: 本发明提供了一种监测风力涡轮机叶片上的弯曲应变的方法和系统。 在一个方面中的方法包括：在涡轮叶片上定位至少三个应变传感器，在使用中每个应变传感器提供应变测量，应变传感器定位成可以从应变测量确定沿边和弯曲弯曲; 使用应变测量计算多个得到的弯曲应变; 计算来自多个所得弯曲应变的平均合成弯曲应变; 并且基于从所述第一传感器的应变测量得到的合成弯曲应变与平均得到的弯曲应变的比较来计算第一传感器的置信度值

公开(公告)号：US20130158896A1

公开(公告)日：2013-06-20

申请号：US13809726

申请日：2011-03-30

Applicant: Liviu Schintee

Inventor： Liviu Schintee

IPC: G01L1/04 ,  G01L1/16 ,  G01L1/00 ,  G06F15/00

CPC classification number: G01L1/04 ,  G01L1/005 ,  G01L1/16 ,  G01L1/26 ,  G01L9/0001 ,  G01L9/0026 ,  G01L11/008 ,  G01L17/005 ,  G06F15/00

Abstract: A pressure testing device for calculating a pressure in a flexible line comprises a housing unit, a force sensor mounted on the housing unit and a clamp assembly having a clamp mounted on the housing unit. The clamp is operable to compress the flexible line against the force sensor by a predetermined degree of deformation of the flexible line. The device includes a displacement sensor adapted to measure a displacement of the clamp. The device also includes a controller having a processor in communication with the force sensor and the displacement sensor, and a memory unit containing stored data. At the predetermined degree of deformation of the flexible line, the processor compares a first signal from the force sensor and a second signal from the displacement senor with the stored data to estimate the pressure within the flexible line.

Abstract translation: 用于计算柔性线中的压力的​​压力测试装置包括壳体单元，安装在壳体单元上的力传感器和具有安装在壳体单元上的夹具的夹具组件。 夹具可操作以通过柔性线的预定变形程度将柔性线压靠在力传感器上。 该装置包括适于测量夹具的位移的位移传感器。 该装置还包括具有与力传感器和位移传感器通信的处理器的控制器，以及包含存储数据的存储单元。 在柔性线的预定变形程度下，处理器将来自力传感器的第一信号和来自位移传感器的第二信号与存储的数据进行比较，以估计柔性线内的压力。

公开(公告)号：US20130134440A1

公开(公告)日：2013-05-30

申请号：US13748737

申请日：2013-01-24

Applicant: Zhong L. Wang ,  Caofeng Pan

Inventor： Zhong L. Wang ,  Caofeng Pan

IPC: H01L27/15 ,  H01L21/77

CPC classification number: H01L27/153 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  G01L1/005 ,  G01L1/16 ,  H01L21/77 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/84 ,  H01L29/872 ,  H01L33/0008 ,  H01L33/18 ,  H01L41/1132

Abstract: A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Abstract translation: 压力传感器元件包括衬底，第一类型的半导体材料层和从第一类型的半导体材料层向上延伸的细长的发光压电纳米结构的阵列。 在每个纳米结构和第一类型半导体层之间形成p-n结。 在每个细长的发光压电纳米结构周围注入绝缘弹性介质层。 设置在弹性介质层上的透明平面电极电耦合到每个纳米结构的顶部。 电压源耦合到第一类型的半导体材料层和透明平面电极，并且在每个纳米结构上施加偏置电压。 每个纳米结构以与施加到其上的压缩应变量成比例的强度发射光。

公开(公告)号：US08434370B2

公开(公告)日：2013-05-07

申请号：US12575368

申请日：2009-10-07

Applicant: Yunje Oh ,  Edward Cyrankowski ,  Zhiwei Shan ,  Syed Amanula Syed Asif

Inventor： Yunje Oh ,  Edward Cyrankowski ,  Zhiwei Shan ,  Syed Amanula Syed Asif

IPC: G01L1/00

CPC classification number: G01L1/005 ,  B81C99/005 ,  G01N3/08 ,  G01N2203/0286 ,  G01N2203/0647

Abstract: A micromachined or microelectromechanical system (MEMS) based push-to-pull mechanical transformer for tensile testing of micro-to-nanometer scale material samples including a first structure and a second structure. The second structure is coupled to the first structure by at least one flexible element that enables the second structure to be moveable relative to the first structure, wherein the second structure is disposed relative to the first structure so as to form a pulling gap between the first and second structures such that when an external pushing force is applied to and pushes the second structure in a tensile extension direction a width of the pulling gap increases so as to apply a tensile force to a test sample mounted across the pulling gap between a first sample mounting area on the first structure and a second sample mounting area on the second structure.

Abstract translation: 一种用于对包括第一结构和第二结构的微米至纳米尺度材料样品的拉伸测试的基于微机械或微机电系统（MEMS）的推挽式机械变压器。 第二结构通过至少一个可使第二结构相对于第一结构运动的柔性元件耦合到第一结构，其中第二结构相对于第一结构设置，以在第一结构之间形成牵引间隙 以及第二结构，使得当在拉伸延伸方向上施加外推力并推动所述第二结构时，所述牵引间隙的宽度增加，以便对安装在所述牵引间隙上的第一样品 第一结构上的安装区域和第二结构上的第二样品安装区域。

公开(公告)号：US20120161147A1

公开(公告)日：2012-06-28

申请号：US13307513

申请日：2011-11-30

Applicant: Viorel Georgel DUMITRU ,  Mihai Brezeanu ,  Stefan Dan Costea ,  Ion Georgescu ,  Viorel Avramescu ,  Bogdan-Catalin Serban

Inventor： Viorel Georgel DUMITRU ,  Mihai Brezeanu ,  Stefan Dan Costea ,  Ion Georgescu ,  Viorel Avramescu ,  Bogdan-Catalin Serban

IPC: H01L29/20 ,  H01L29/84

CPC classification number: G01L1/18 ,  G01L1/005 ,  G01L9/0051 ,  G01L9/0098

Abstract: An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached.

Abstract translation: 包括第一肖特基二极管，第二肖特基二极管和集成电路的示例传感器。 传感器还包括产生第一肖特基二极管两端的第一电压和跨越第二肖特基二极管的第二电压的电压发生器。 当第一肖特基二极管和第二肖特基二极管受到不同的应变时，集成电路测量流过第一肖特基二极管和第二肖特基二极管的电流的值，以确定第一肖特基二极管和第二肖特基二极管的元件上的应变 连接第二肖特基二极管。

公开(公告)号：US08127616B1

公开(公告)日：2012-03-06

申请号：US12080299

申请日：2008-04-02

Applicant: Reed Carver ,  Joseph Snyder ,  Frederick J. Lisy ,  Troy Prince

Inventor： Reed Carver ,  Joseph Snyder ,  Frederick J. Lisy ,  Troy Prince

IPC: G01L7/08

CPC classification number: F02C9/28 ,  F02D41/3005 ,  F23N5/022 ,  G01B5/30 ,  G01L1/005

Abstract: The present invention relates, in general, to pressure sensors capable of operating at high temperatures. The present invention further relates to a high temperature pressure sensor with an improved gage factor. The present invention still further provides a pressure sensor with a smaller sized diaphragm, which is capable of reading higher pressures. The present invention also provides a method and sensor for detecting strain using shape memory alloys.

Abstract translation: 本发明一般涉及能够在高温下操作的压力传感器。 本发明还涉及具有改进的量规因子的高温压力传感器。 本发明还提供一种压力传感器，该压力传感器具有较小尺寸的隔膜，其能够读取更高的压力。 本发明还提供一种使用形状记忆合金检测应变的方法和传感器。

公开(公告)号：US08044472B2

公开(公告)日：2011-10-25

申请号：US12692267

申请日：2010-01-22

Applicant: Anthony D. Kurtz ,  Adam Hurst

Inventor： Anthony D. Kurtz ,  Adam Hurst

IPC: H01L29/84

CPC classification number: G01L1/005 ,  B82Y10/00 ,  B82Y30/00 ,  G01L1/18 ,  G01L9/0055

Abstract: Nanotube and graphene transducers are disclosed. A transducer according to the present invention can include a substrate, a plurality of semiconductive structures, one or more metal pads, and a circuit. The semiconductive structures can be nanotubes or graphene located entirely on a surface of the substrate, such that each of the semiconductive structures is supported along its entire length by the substrate. An electrical property of the semiconductive structures can change when a force is applied to the substrate. The metal pads can secure at least one of the semiconductive structures to the substrate. The circuit can be coupled to at least some of the semiconductive structures to provide an output responsive to the change in the electrical property of the semiconductive structures, so as to indicate the applied force.

Abstract translation: 公开了纳米管和石墨烯转换器。 根据本发明的换能器可以包括基板，多个半导体结构，一个或多个金属焊盘和电路。 半导体结构可以是完全位于衬底的表面上的纳米管或石墨烯，使得每个半导体结构沿其整个长度由衬底支撑。 当向衬底施加力时，半导体结构的电性能可以改变。 金属垫可以将至少一个半导体结构固定到基底上。 该电路可以耦合到半导体结构中的至少一些，以提供响应于半导体结构的电性能的变化的输出，以便指示施加的力。

公开(公告)号：US20110169704A1

公开(公告)日：2011-07-14

申请号：US12717454

申请日：2010-03-04

Applicant: Pulickel AJAYAN ,  Emer Lahiff ,  Paul Stryjek ,  Chang Y. Ryu ,  Seamus Curran

Inventor： Pulickel AJAYAN ,  Emer Lahiff ,  Paul Stryjek ,  Chang Y. Ryu ,  Seamus Curran

IPC: H01Q1/28 ,  H01Q21/12

CPC classification number: G01M5/0083 ,  B82Y15/00 ,  B82Y30/00 ,  G01L1/005 ,  G01L1/20 ,  G01M5/0033 ,  H01B1/24 ,  H01Q1/28 ,  H01Q1/38 ,  Y10S977/953 ,  Y10S977/956

Abstract: A method of producing polymer/nanotube composites where the density and position of the nanotubes within the composite can be controlled. Carbon nanotubes are grown from organometallic micropatterns. These periodic nanotube arrays are then incorporated into a polymer matrix by depositing a curable polymer film on the as-grown tubes. This controlled method of producing free-standing nanotube/polymer composite films may be used to form nanosensors which provide information regarding a physical condition of a material, such as an airplane chassis or wing, in contact with the nanosensor.

Abstract translation: 制备聚合物/纳米管复合材料的方法，其中可以控制复合材料内纳米管的密度和位置。 碳纳米管从有机金属微图案生长。 然后将这些周期性纳米管阵列通过在可生长的管上沉积可固化的聚合物膜而结合到聚合物基质中。 可以使用这种控制的制造独立的纳米管/聚合物复合膜的方法来形成纳米传感器，其提供关于与纳米传感器接触的材料（例如飞机底盘或机翼）的物理状态的信息。

公开(公告)号：US07743666B2

公开(公告)日：2010-06-29

申请号：US11389065

申请日：2006-03-27

Applicant: Tetsuya Kuwashima ,  Naoki Ohta

Inventor： Tetsuya Kuwashima ,  Naoki Ohta

IPC: G01L1/00

CPC classification number: G01L1/005 ,  G01P15/0894 ,  G01P15/18 ,  H01L45/00

Abstract: A tunneling effect element, including an insulating layer that forms a tunneling barrier, a lower electrode that is conductive and non-magnetic, and is formed on a bottom surface of said insulating layer, an upper electrode that is conductive and non-magnetic, and is formed on a top surface of said insulating layer, and a transmission member. The transmission member is made of insulating material that is formed surrounding the insulating layer and the lower and upper electrodes. The transmission member is also formed on a surface of an object to be detected, and transmits deformation of the object to be detected to the insulating layer. The tunneling effect element detects a change in stress of the object to be detected as a change in electric resistance.

Abstract translation: 隧道效应元件，包括形成隧道势垒的绝缘层，导电和非磁性的下电极，并且形成在所述绝缘层的底表面上，导电和非磁性的上电极，以及 形成在所述绝缘层的上表面和透射构件上。 传输构件由形成在绝缘层和下电极和上电极周围的绝缘材料制成。 传输构件也形成在待检测物体的表面上，并且将被检测物体的变形发送到绝缘层。 隧道效应元件检测作为电阻变化的待检测物体的应力变化。

公开(公告)号：US20100140723A1

公开(公告)日：2010-06-10

申请号：US12692267

申请日：2010-01-22

Applicant: Anthony D. KURTZ ,  Adam Hurst

Inventor： Anthony D. KURTZ ,  Adam Hurst

IPC: H01L29/84 ,  H01L21/18

CPC classification number: G01L1/005 ,  B82Y10/00 ,  B82Y30/00 ,  G01L1/18 ,  G01L9/0055

Abstract: Nanotube and graphene transducers are disclosed. A transducer according to the present invention can include a substrate, a plurality of semiconductive structures, one or more metal pads, and a circuit. The semiconductive structures can be nanotubes or graphene located entirely on a surface of the substrate, such that each of the semiconductive structures is supported along its entire length by the substrate. An electrical property of the semiconductive structures can change when a force is applied to the substrate. The metal pads can secure at least one of the semiconductive structures to the substrate. The circuit can be coupled to at least some of the semiconductive structures to provide an output responsive to the change in the electrical property of the semiconductive structures, so as to indicate the applied force.

Abstract translation: 公开了纳米管和石墨烯转换器。 根据本发明的换能器可以包括基板，多个半导体结构，一个或多个金属焊盘和电路。 半导体结构可以是完全位于衬底的表面上的纳米管或石墨烯，使得每个半导体结构沿其整个长度由衬底支撑。 当向衬底施加力时，半导体结构的电性能可以改变。 金属垫可以将至少一个半导体结构固定到基底上。 该电路可以耦合到半导体结构中的至少一些，以提供响应于半导体结构的电性能的变化的输出，以便指示施加的力。