Domain wall propagating device
    81.
    发明授权
    Domain wall propagating device 失效
    域墙传播设备

    公开(公告)号:US3789374A

    公开(公告)日:1974-01-29

    申请号:US3789374D

    申请日:1972-09-14

    发明人: SHERMAN P

    摘要: A domain wall propagating device with a magnetic wire wound in grooves on a substrate. Coils wound around the wire are placed in recesses in the substrate. A propagating winding is wrapped around the substrate, and the device may be covered with a magnetic shielding layer. To avoid damaging the magnetic wire during the fabrication of the device, the coils are wound on a tubular mandrel through which the magnetic wire extends. The magnetic wire may be supported in a channel formed between a pair of non-magnetic wires bonded together.

    摘要翻译: 具有缠绕在基板上的凹槽中的磁线的畴壁传播装置。 缠绕在线上的线圈被放置在衬底中的凹槽中。 传播绕组缠绕在基片上,并且该器件可被一个磁屏蔽层覆盖。 为了避免在制造装置期间损坏磁线,线圈缠绕在管状心轴上,磁线延伸通过该心轴。 磁线可以被支撑在形成在一对非磁性线之间的通道中。

    Magnetic thin film plated wire memory
    82.
    发明授权
    Magnetic thin film plated wire memory 失效
    磁薄膜电线存储器

    公开(公告)号:US3786450A

    公开(公告)日:1974-01-15

    申请号:US3786450D

    申请日:1971-08-24

    CPC分类号: G11C11/04 G11C7/00 H01F10/26

    摘要: A magnetic thin film plated wire memory is provided which comprises a word plane provided with a number of parallel word wires, a digit plane having a conductive plate provided with parallel grooves and a number of digit wires each covered with a magnetic thin film and snugly disposed within said grooves with an electrical insulation therebetween, said word plane and digit plane being laminated with each other such that the word wires and digit wires face and intersect at right angles with each other, said word wires being connected at their one ends to said conductive plate, whereby when one of said word wires are selected, a returning electric current flowing through said conductive plate is magnetically coupled with said digit wires.

    摘要翻译: 提供了一种磁性薄膜电镀线存储器,其包括具有多个平行字线的字平面,具有设置有平行凹槽的导电板的数字平面和多个数字线,每个数字线均覆盖有磁性薄膜并且贴合地布置 在所述凹槽之间具有电绝缘的所述凹槽中,所述字面和数字平面彼此层叠,使得字线和数字线彼此成直角并且相交,所述字线的一端连接到所述导电 从而当选择所述字线中的一个时,流过所述导电板的返回电流与所述数字线磁耦合。

    Method of making a plated wire array
    83.
    发明授权
    Method of making a plated wire array 失效
    制造电线阵列的方法

    公开(公告)号:US3771220A

    公开(公告)日:1973-11-13

    申请号:US3771220D

    申请日:1972-05-05

    IPC分类号: G11C11/04 H01F7/06

    CPC分类号: G11C11/04 Y10T29/49069

    摘要: The purpose of the invention is to produce a plated wire array mat which is simpler to fabricate, permits higher packing densities, and reduces the required strap drive currents over the present array mat techniques. The structure permits the positioning of ferrite keeper material in closely adjacent and fully surrounded relationship to the plated wire so as to minimize straying magnetic fields, thereby allowing higher packing densities and lower drive currents to be used. The fabrication technique utilizes highly precise photographic techniques to build a simple tunnel structure array utilizing photolithic layers, exposure, and wash thereof to achieve the desired structural relationship.

    摘要翻译: 本发明的目的是生产一种电镀线阵列垫,其更容易制造,允许更高的包装密度,并且通过本发明的阵列垫技术减少所需的带驱动电流。 该结构允许铁氧体保持材料与电镀线紧密相邻且完全包围的关系定位,以便使杂散磁场最小化,从而允许使用较高的堆积密度和较低的驱动电流。 该制造技术利用高精度的照相技术来构建一个使用光层,暴露和洗涤的简单隧道结构阵列,以达到所需的结构关系。

    Method of making epoxy tunnel structure for plated wire memories
    84.
    发明授权
    Method of making epoxy tunnel structure for plated wire memories 失效
    制备电线电路环氧隧道结构的方法

    公开(公告)号:US3768155A

    公开(公告)日:1973-10-30

    申请号:US3768155D

    申请日:1972-08-11

    申请人: US NAVY

    发明人: BONFIGLIO G FARRIS J

    IPC分类号: G11C11/04 H01F7/06

    CPC分类号: G11C11/04 Y10T29/49069

    摘要: A process for fabricating a memory plane for a plated wire memory stack is provided. A plurality of tunnel-forming wires coated with lubricant are straightened under tension and deployed over a bottom sheet of epoxy material. The sheet is covered with epoxy resin up to the wires and strips of epoxy material are then placed over the bottom sheet to either side of the wires to define wire array cavities. Additional epoxy resin is then applied filling the cavities and covering the strips after which a top sheet of epoxy is laid down. After the assembly is cured, the tunnel-forming wires are withdrawn and plated wires are inserted into the resultant holes in the word pack.

    摘要翻译: 提供了一种用于制造用于电镀线存储器堆叠的存储器平面的工艺。 涂覆有润滑剂的多个隧道形成线在张力下拉直并展开在底部环氧树脂材料片上。 片材被环氧树脂覆盖,直到环形材料的电线和条带然后放置在底部片材的任一侧的电线的两侧以限定线阵列腔。 然后施加额外的环氧树脂填充空腔并覆盖条,之后放置顶层环氧树脂。 组装固化后,将隧道形成线取出,并将电镀线插入单词包中的合成孔中。

    Magnetic thin film memory plane
    85.
    发明授权
    Magnetic thin film memory plane 失效
    磁薄膜存储器平面

    公开(公告)号:US3739361A

    公开(公告)日:1973-06-12

    申请号:US3739361D

    申请日:1971-06-25

    摘要: The word lines are arranged to cross the magnetic wires through which flows the digit current, and the surface in opposed relation with these word lines of the magnetic keeper which is disposed outwardly thereof, is applied with a thin electrically conductive film which is as a return line for the digit current.

    摘要翻译: 字线布置成穿过流过数字电流的磁线,并且与设置在其外部的磁力保持器的这些字线相对的表面被施加有作为返回的薄导电膜 线数字电流。

    Bistable storage element with magnetic data storage
    86.
    发明授权
    Bistable storage element with magnetic data storage 失效
    具有磁数据存储的双向存储元件

    公开(公告)号:US3732550A

    公开(公告)日:1973-05-08

    申请号:US3732550D

    申请日:1970-12-23

    申请人: BAYER AG

    发明人: HAUPT W

    IPC分类号: G06F3/00 G11C11/06 G11C11/04

    CPC分类号: G06F3/007 G11C11/06007

    摘要: A bistable storage element with magnetic data storage contains in its magnetic circuit magnetized cores with different coercivities H1 and H2 so that only one core can be remagnetized by an external magnetic field H of the value H2

    摘要翻译: 具有磁数据存储器的双稳态存储元件在其磁路中包含具有不同矫顽力H1和H2的磁化磁芯,使得只有一个磁芯可以由值H2

    Method of making a batch fabricated magnetic memory
    87.
    发明授权
    Method of making a batch fabricated magnetic memory 失效
    制造批量制造磁性记忆体的方法

    公开(公告)号:US3708874A

    公开(公告)日:1973-01-09

    申请号:US3708874D

    申请日:1971-08-23

    申请人: BUNKER RAMO

    发明人: PARKS H

    IPC分类号: G11C11/04 H01F7/06

    CPC分类号: G11C11/04 Y10T29/49069

    摘要: A magnetic wire memory construction comprising a plurality of stacked memory planes, each memory plane being formed from two like-formed self-supporting and rigid metal sheets in opposed relation. The sheets have channels formed therein using precision batch fabricated metal sculpturing techniques, with certain of the channels being filled with insulative material. The dimensions and locations of the channels are chosen so that precisely located memory wire receiving tunnels and corresponding insulated drive line strips perpendicular thereto are formed when the sheets are placed together in opposed relation. Memory wire elements are inserted into the tunnels which protect and shield the elements and maintain them accurately positioned with respect to one another and to the drive line strips so as to permit achieving a memory of increased density and speed of operation.

    摘要翻译: 一种磁线存储器结构,包括多个堆叠的存储器平面,每个存储器平面由相对关系的两个相似形状的自支撑和刚性金属板形成。 这些片材具有使用精密批量制造的金属雕刻技术形成的通道,其中一些通道​​填充有绝缘材料。 选择通道的尺寸和位置,使得当片材以相对的关系放置在一起时,形成精确定位的存储器线接收隧道和垂直于其的相应的绝缘驱动线条。 存储器线元件被插入到隧道中,这些隧道保护和屏蔽元件并将它们相对于彼此和驱动线条精确地定位,以便实现增加密度和操作速度的记忆。

    Driving technique for thin film memory elements
    88.
    发明授权
    Driving technique for thin film memory elements 失效
    薄膜记忆元件的驱动技术

    公开(公告)号:US3704457A

    公开(公告)日:1972-11-28

    申请号:US3704457D

    申请日:1970-01-19

    发明人: MAEDA HISAO

    IPC分类号: G11C11/04 G11C11/14

    CPC分类号: G11C11/04

    摘要: A method of driving a memory device having a matrix memory consisting of information wires provided respectively with magnetic thin film and to be applied with information pulse currents and word conductor wires crossing perpendicularly with said information wires and to be applied with word pulse currents; in which both of writing-in of informations ''''1'''' and ''''0'''' are carried out, respectively, by first and second bipolar information pulse currents which are different in only their polarities.

    摘要翻译: 一种驱动存储器件的方法,该存储器件具有由分别设置有磁性薄膜的信息线构成的矩阵存储器,并且施加有与所述信息线垂直交叉的信息脉冲电流和字线,并施加字脉冲电流; 其中信息“1”和“0”的写入两者分别由只有其极性不同的第一和第二双极信息脉冲电流来执行。

    Memory device and method of making the same
    89.
    发明授权
    Memory device and method of making the same 失效
    存储器件及其制造方法

    公开(公告)号:US3699648A

    公开(公告)日:1972-10-24

    申请号:US3699648D

    申请日:1970-07-31

    摘要: A memory device includes at least one memory plane comprising a plurality of substantially parallel memory lines serving as digit lines and arranged in a common plane, and plural pairs of lead wires, serving as word lines, with one lead wire of each pair extending along only one surface of the plane and the other lead wire extending along only the opposite surface of the plane, whereby one lead wire of each pair overlies all the memory lines and the other lead wire of each pair underlies all the memory lines, with the lead wires intersecting the memory lines at right angles. Plural pairs of insulated strings extend in parallel relation between respective pairs of adjacent memory lines, with the strings of each pair extending alternately above and below adjacent pairs of lead wires and crossing each other between such adjacent pairs of lead wires to clamp the same in position therebetween. Plural memory planes may be interconnected by the memory lines and the insulated strings, in the form of a ribbon cable. At least some of the memory lines have a surface plating of a magnetic alloy, and the lead wires are insulated wires or tapes.

    Polarity phasing of strap line for higher bit packing density of plated wire
    90.
    发明授权
    Polarity phasing of strap line for higher bit packing density of plated wire 失效
    带状线的极性相位对于电缆的高位封装密度

    公开(公告)号:US3698011A

    公开(公告)日:1972-10-10

    申请号:US3698011D

    申请日:1971-04-12

    CPC分类号: G11C7/02

    摘要: A system for connecting the strap drivers to their respective straps of a plated wire memory array which substantially reduces the effects of the fields induced by current flow through the straps on adjacent memory elements. Adjacent pairs of strap lines are connected to their respective drivers at their opposite ends. Within each pair the strap lines are connected at the same end to their respective drivers.

    摘要翻译: 用于将带驱动器连接到电镀线存储器阵列的各自带的系统,其基本上减少了通过相邻存储器元件上的带的电流引起的场的影响。 相邻的带对线对在其相对端连接到它们各自的驱动器。 在每一对中,绑带线在相同的端部连接到它们各自的驱动器。