摘要:
The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.
摘要:
A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.
摘要:
The present invention provides a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a compound having an adenosine uptake inhibitory activity, a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a tricyclic compound represented by formula (I) [wherein L represents —NHC(═O)— or the like, R1 represents a hydrogen atom, halogen, or the like, X1—X2—X3 represents S—CR7═CR8 (wherein R7 and R8 may be the same or different and each represents a hydrogen atom, halogen, substituted or unsubstituted lower alkyl, or the like), or the like, Y represents —CH2SO2—, —SO2CH2— or the like, R2 represents substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkoxy, substituted or unsubstituted aryl, or the like] or a pharmaceutically acceptable salt thereof, and the like.
摘要:
A semiconductor device includes: a semiconductor substrate made of first semiconductor having a first lattice constant; an isolation region formed in the semiconductor substrate and defining active regions; a gate electrode structure formed above each of the active regions; dummy gate electrode structures disposed above a substrate surface and covering borders between one of the active regions on both sides of the gate electrode structure and the isolation region; recesses formed by etching the active regions between the gate electrode structure and dummy gate electrode structures; and semiconductor layers epitaxially grown on the recesses and made of second semiconductor having a second lattice constant different from the first lattice constant.
摘要:
The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.
摘要:
The present invention provides a sacrificial electrode material which consists of a single phase amorphous structure or a structure consisting of an amorphous phase and a crystalline solid solution phase and provides electrochemical corrosion protection to metallic articles exposed to an aqueous electrolytic solution. The electrode material is prepared by rapidly quenching a magnesium-based alloy material from the liquid phase or vapor phase thereof, the magnesium-based alloy material consisting the general formula: Mg.sub.bal X1.sub.a X2.sub.b or Mg.sub.bal X1.sub.a, wherein X1 is at least one element selected from the group consisting of Al, Zn, Ga, Ca and In; X2 is at least one element selected from the group consisting of Mm (misch metal), Y and rare earth metal elements; a and b are, in atomic percentages, 5.0.ltoreq.a.ltoreq.35.0 and 3.0.ltoreq.b.ltoreq.25.0, respectively. The magnesium-based alloy material may further contain one or more transition metal elements in their total contents not exceeding 1.0 atomic %.
摘要:
There is provided an adhesive resin composition suitable for a multilayer structure which retains sufficient adhesive strength even when in contact with gasoline or light gas oil, and has excellent long-term durability and durability in high-temperature fuels and excellent adhesive strength at high temperature. The adhesive resin composition of the invention includes a modified ethylene polymer (A1) which is graft-modified with an unsaturated carboxylic acid or a derivative thereof and which has a density of 930 to 980 kg/m3, and an unmodified ethylene polymer (A2) having a density of 910 to 929 kg/m3, wherein the adhesive resin composition has a melt flow rate (MFR) [ASTM D 1238 (temperature: 190° C., 2160 g load)] of 0.1 to 3 g/10 min and a density of 920 to 930 kg/m3 and has an elution amount of 60 wt % or less at 85° C. or lower as determined by cross-fractionation chromatography. The present invention also relates to a multilayer structure formed by using the adhesion resin composition.
摘要翻译:提供一种适用于多层结构的粘合树脂组合物,即使在与汽油或轻质瓦斯油接触时也保持足够的粘合强度,并且在高温燃料中具有优异的长期耐久性和耐久性,并且在高温下具有优异的粘合强度。 本发明的粘合剂树脂组合物包括用不饱和羧酸或其衍生物接枝改性且密度为930至980kg / m 3的改性乙烯聚合物(A1)和未改性的乙烯聚合物(A2) 密度为910〜929kg / m 3,其中粘合性树脂组合物的熔体流动速率(MFR)[ASTM D 1238(温度:190℃,2160g负荷)]为0.1〜3g / 10分钟, 密度为920〜930kg / m 3,通过交叉分级色谱法测定,在85℃以下的洗脱量为60重量%以下。 本发明还涉及通过使用粘合树脂组合物形成的多层结构体。
摘要:
To prevent hardening of waterproofing portions of a wire harness and increase in outer diameter. A plurality of shielded wires having waterproofing portions in a wire bundle included in one wire harness are divided into a plurality of groups; the waterproofing portions are provided at different locations by group; and the waterproofing portions are provided at a predetermined distance from the waterproofing portions in another group so as to be disposed dispersedly in an axis direction of the wire harness.
摘要:
A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.
摘要:
A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.