THERAPEUTIC AGENT FOR IRRITABLE BOWEL SYNDROME
    3.
    发明申请
    THERAPEUTIC AGENT FOR IRRITABLE BOWEL SYNDROME 审中-公开
    可治疗性皮肤病综合征的治疗药物

    公开(公告)号:US20100267796A1

    公开(公告)日:2010-10-21

    申请号:US12065120

    申请日:2007-10-26

    摘要: The present invention provides a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a compound having an adenosine uptake inhibitory activity, a therapeutic agent for irritable bowel syndrome which comprises, as an active ingredient, a tricyclic compound represented by formula (I) [wherein L represents —NHC(═O)— or the like, R1 represents a hydrogen atom, halogen, or the like, X1—X2—X3 represents S—CR7═CR8 (wherein R7 and R8 may be the same or different and each represents a hydrogen atom, halogen, substituted or unsubstituted lower alkyl, or the like), or the like, Y represents —CH2SO2—, —SO2CH2— or the like, R2 represents substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkoxy, substituted or unsubstituted aryl, or the like] or a pharmaceutically acceptable salt thereof, and the like.

    摘要翻译: 本发明提供一种肠易激综合征治疗剂,其包含作为活性成分的具有腺苷摄取抑制活性的化合物,用于肠易激综合征的治疗剂,其包含作为活性成分的由式(3)表示的三环化合物 I)[其中L表示-NHC(= O) - 等,R 1表示氢原子,卤素等,X 1 -X 2 -X 3表示S-CR 7 = CR 8(其中R 7和R 8可以相同或 不同,各自表示氢原子,卤素,取代或未取代的低级烷基等)等,Y表示-CH 2 SO 2 - , - SO 2 CH 2 - 等,R 2表示取代或未取代的低级烷基,取代或未取代的低级 烷氧基,取代或未取代的芳基等)或其药学上可接受的盐等。

    SEMICONDUCTOR DEVICE WITH HETERO JUNCTION
    4.
    发明申请
    SEMICONDUCTOR DEVICE WITH HETERO JUNCTION 有权
    具有异位结的半导体器件

    公开(公告)号:US20090315116A1

    公开(公告)日:2009-12-24

    申请号:US12404547

    申请日:2009-03-16

    申请人: Takashi SAKUMA

    发明人: Takashi SAKUMA

    IPC分类号: H01L29/78 H01L21/336

    摘要: A semiconductor device includes: a semiconductor substrate made of first semiconductor having a first lattice constant; an isolation region formed in the semiconductor substrate and defining active regions; a gate electrode structure formed above each of the active regions; dummy gate electrode structures disposed above a substrate surface and covering borders between one of the active regions on both sides of the gate electrode structure and the isolation region; recesses formed by etching the active regions between the gate electrode structure and dummy gate electrode structures; and semiconductor layers epitaxially grown on the recesses and made of second semiconductor having a second lattice constant different from the first lattice constant.

    摘要翻译: 半导体器件包括:由具有第一晶格常数的第一半导体制成的半导体衬底; 形成在所述半导体衬底中并限定有源区的隔离区; 在每个有源区上形成的栅电极结构; 伪栅极电极结构,设置在衬底表面上方并覆盖栅电极结构两侧的有源区之一和隔离区之间的边界; 通过蚀刻栅电极结构和虚拟栅电极结构之间的有源区形成的凹陷; 以及在所述凹部上外延生长并由具有不同于所述第一晶格常数的第二晶格常数的第二半导体制成的半导体层。

    Film Deposition Method and Film Deposition Apparatus of Metal Film
    5.
    发明申请
    Film Deposition Method and Film Deposition Apparatus of Metal Film 失效
    薄膜沉积方法和金属薄膜沉积装置

    公开(公告)号:US20090227104A1

    公开(公告)日:2009-09-10

    申请号:US11922918

    申请日:2006-06-28

    摘要: The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

    摘要翻译: 本发明是一种金属膜的成膜方法,包括以下步骤:将处理容器内的台阶上形成有凹部的被处理物放置在其表面; 抽出处理容器以在其中产生真空; 在真空处理容器中电离金属靶,通过由惰性气体制备等离子体形成的等离子体产生包含金属离子的金属颗粒; 并且通过向被放置在台架上的待加工物体施加偏置电力,以将等离子体和金属颗粒拉入待加工物体,刮掉凹部的底部以形成刮削凹部,并且沉积金属膜 在待处理物体的整个表面上,包括凹部和刮削凹槽中的表面。

    Sacrificial electrode material for corrosion prevention
    6.
    发明授权
    Sacrificial electrode material for corrosion prevention 失效
    用于防腐的牺牲电极材料

    公开(公告)号:US5423969A

    公开(公告)日:1995-06-13

    申请号:US217009

    申请日:1994-03-23

    CPC分类号: C23F13/14

    摘要: The present invention provides a sacrificial electrode material which consists of a single phase amorphous structure or a structure consisting of an amorphous phase and a crystalline solid solution phase and provides electrochemical corrosion protection to metallic articles exposed to an aqueous electrolytic solution. The electrode material is prepared by rapidly quenching a magnesium-based alloy material from the liquid phase or vapor phase thereof, the magnesium-based alloy material consisting the general formula: Mg.sub.bal X1.sub.a X2.sub.b or Mg.sub.bal X1.sub.a, wherein X1 is at least one element selected from the group consisting of Al, Zn, Ga, Ca and In; X2 is at least one element selected from the group consisting of Mm (misch metal), Y and rare earth metal elements; a and b are, in atomic percentages, 5.0.ltoreq.a.ltoreq.35.0 and 3.0.ltoreq.b.ltoreq.25.0, respectively. The magnesium-based alloy material may further contain one or more transition metal elements in their total contents not exceeding 1.0 atomic %.

    摘要翻译: 本发明提供一种牺牲电极材料,其由单相无定形结构或由非晶相和结晶固溶体相组成的结构组成,并且对暴露于水性电解液的金属制品提供电化学腐蚀保护。 通过从其液相或气相快速淬火镁基合金材料制备电极材料,镁基合金材料由以下通式组成:MgbalX1aX2b或MgbalX1a,其中X1是选自以下的至少一种元素: 的Al,Zn,Ga,Ca和In; X2是选自由Mm(混合稀土金属),Y和稀土金属元素组成的组中的至少一种元素; a和b分别为原子百分比为5.0

    Adhesive resin composition and multilayer structure using the same
    7.
    发明授权
    Adhesive resin composition and multilayer structure using the same 有权
    粘合树脂组合物及使用其的多层结构

    公开(公告)号:US08753729B2

    公开(公告)日:2014-06-17

    申请号:US14007243

    申请日:2012-03-21

    IPC分类号: B29D22/00 B29D23/00 B32B1/08

    摘要: There is provided an adhesive resin composition suitable for a multilayer structure which retains sufficient adhesive strength even when in contact with gasoline or light gas oil, and has excellent long-term durability and durability in high-temperature fuels and excellent adhesive strength at high temperature. The adhesive resin composition of the invention includes a modified ethylene polymer (A1) which is graft-modified with an unsaturated carboxylic acid or a derivative thereof and which has a density of 930 to 980 kg/m3, and an unmodified ethylene polymer (A2) having a density of 910 to 929 kg/m3, wherein the adhesive resin composition has a melt flow rate (MFR) [ASTM D 1238 (temperature: 190° C., 2160 g load)] of 0.1 to 3 g/10 min and a density of 920 to 930 kg/m3 and has an elution amount of 60 wt % or less at 85° C. or lower as determined by cross-fractionation chromatography. The present invention also relates to a multilayer structure formed by using the adhesion resin composition.

    摘要翻译: 提供一种适用于多层结构的粘合树脂组合物,即使在与汽油或轻质瓦斯油接触时也保持足够的粘合强度,并且在高温燃料中具有优异的长期耐久性和耐久性,并且在高温下具有优异的粘合强度。 本发明的粘合剂树脂组合物包括用不饱和羧酸或其衍生物接枝改性且密度为930至980kg / m 3的改性乙烯聚合物(A1)和未改性的乙烯聚合物(A2) 密度为910〜929kg / m 3,其中粘合性树脂组合物的熔体流动速率(MFR)[ASTM D 1238(温度:190℃,2160g负荷)]为0.1〜3g / 10分钟, 密度为920〜930kg / m 3,通过交叉分级色谱法测定,在85℃以下的洗脱量为60重量%以下。 本发明还涉及通过使用粘合树脂组合物形成的多层结构体。

    WIRE HARNESS WATERPROOF STRUCTURE
    8.
    发明申请
    WIRE HARNESS WATERPROOF STRUCTURE 审中-公开
    线束线防水结构

    公开(公告)号:US20130126232A1

    公开(公告)日:2013-05-23

    申请号:US13812345

    申请日:2011-03-28

    申请人: Takashi Sakuma

    发明人: Takashi Sakuma

    IPC分类号: H01B7/282

    摘要: To prevent hardening of waterproofing portions of a wire harness and increase in outer diameter. A plurality of shielded wires having waterproofing portions in a wire bundle included in one wire harness are divided into a plurality of groups; the waterproofing portions are provided at different locations by group; and the waterproofing portions are provided at a predetermined distance from the waterproofing portions in another group so as to be disposed dispersedly in an axis direction of the wire harness.

    摘要翻译: 防止线束防水部的硬化,外径增大。 在一根线束中包括的线束中具有防水部的多根屏蔽线分成多组, 防水部分按不同的位置设置; 并且防水部分设置在与另一组中的防水部分预定距离处,以便沿着线束的轴线方向分散布置。