摘要:
Elastic member bundled by pencil band is mounted to the lower edge of support part. Elastic member is composed with tungsten wires which are 25 mm in the length and 0.15 mm in diameter bundled with every 30 wires in one bundle. The tip part of each element wire of elastic member contacts polishing pad with the tip end cut round and performs dressing of polishing pad. The wire size of the tip part of each element wire of elastic member is made to be fine and the cutting width on polishing pad is made to be narrow, and at the same time, the rigidity of elastic member is made to be enhanced by bundling each element wire of elastic member with pencil band, and a large pressure is made to be pressed to the fine tip part of each element wire. Therefore, the tip part of elastic member can give an effective incision depth to polishing pad.
摘要:
A system for in-situ monitoring at least one aspect of a chemical mechanical planarization process can include a CMP pad, CMP pad dresser with at least a translucent portion, and an optical sensor. The optical sensor can be configured to optically engage the CMP pad through the translucent portion of the CMP pad dresser. Methods of monitoring chemical mechanical planarization processes can include using such CMP pad dresser to view a performance characteristic through the CMP pad dresser.
摘要:
A CMP pad conditioner comprises a plurality of abrasive segments. Each abrasive segment includes a segment blank and an abrasive layer attached to the segment blank, the abrasive layer including a superhard abrasive material. A pad conditioner substrate is also provided. Each of the plurality of abrasive segments is permanently affixed to the pad conditioner substrate in an orientation that enables removal of material from a CMP pad by the abrasive layer as the pad conditioner and the CMP pad are moved relative to one another.
摘要:
To provide a CMP conditioner that prevents dissolution of metals in slurry, without the chipping of the abrasive grains and/or decreasing the cutting performance. The CMP apparatus has a polishing pad that faces and contacts conditioning surface of the conditioner body. On this conditioning surface, abrasive grains are distributed and fixed to form abrasive grain layer, thus forming the CMP conditioner. The conditioner body is made of ceramics, the abrasive grains in the abrasive grain layer are held by binding phase made of low temperature co-fired ceramics.
摘要:
A method and apparatus for conditioning and monitoring a planarizing medium used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a conditioning body having a conditioning surface that engages a planarizing surface of the planarizing medium and is movable relative to the planarizing medium. A force sensor is coupled to the conditioning body to detect a frictional force imparted to the conditioning body by the planarizing medium when the conditioning body and the planarizing medium are moved relative to each other. The apparatus can further include a feedback device that controls the motion, position, or force between the conditioning body and the planarizing medium to control the conditioning of the planarizing medium.
摘要:
When honing an abrasive pad for polishing a wafer by rotating while closely contacting the wafer by bringing a conditioner into contact with the abrasive pad, forces applied from the abrasive pad to the conditioner are detected by a plurality of pressure detectors through a conditioner driving unit for holding the conditioner. The pressure detectors are respectively able to detect forces in two directions such as rotational direction and radial direction. A memory stores correlations between detection values and wafer polishing quantities under various conditioning terms. Therefore, it is determined whether the detection values are kept within acceptable limits stored in the memory. When the values are out of the acceptable limits, a controller controls the values so that they fall within the acceptable limits by properly changing conditioning terms.
摘要:
A dressing apparatus dresses a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer in a polishing apparatus. The dressing apparatus comprises a dresser body (31) connected to a dresser drive shaft (23) which is vertically movable, a dresser plate (32) which is vertically movable with respect to the dresser body (31), and a dressing member (22) held by the dresser plate (32) for dressing the polishing surface (1a).
摘要:
Chemical mechanical apparatuses including a polishing pad conditioning unit for improving a conditioning rate and wear uniformity of a polishing pad are provided. In one aspect, a chemical mechanical polishing apparatus includes a polishing pad conditioner including conditioning disks disposed in a radial direction of a planarizing surface of a circular polishing pad and contacted with the planarizing surface of the circular polishing pad during rotation of the circular polishing pad. The conditioning disks are connected to first drive units supported by an arm disposed over the circular polishing pad and extended in a radial direction of a planarizing surface of the circular polishing pad. The arm is connected to second drive units. The second drive units move the arm horizontally and reciprocally in the radial direction of the planarizing surface of the circular polishing pad. Thus, a conditioning rate and wear uniformity of the polishing pad may be improved.
摘要:
A method and apparatus for selectively conditioning a planarizing surface of a polishing pad. In one embodiment, a conditioning system has a carrier assembly with an arm that may be positioned over a polishing pad, a conditioning element coupled to the arm, and an actuator coupled to the arm to move the conditioning element into engagement with the planarizing surface of the polishing pad. The conditioning element is an abrasive member, such as an abrasive disk or a brush. The conditioning system may also have a controller operatively coupled to the engagement actuator to control an operating parameter of the conditioning element as a function of the distribution of a surface characteristic across the planarizing surface of the polishing pad.
摘要:
A laser element is mounted above a polishing pad of a workpiece polishing machine to monitor and control flatness of the pad. Actual flatness of the pad is determined by a computer processor which receives thickness measurements from the laser element and compares the thickness at the inner diameter portion of the pad with the thickness at the outer diameter portion of the pad. If the flatness varies substantially from a target flatness, a conditioning device mounted on the machine is moved appropriately relative to the pad to conform its flatness to the target flatness.