-
1.发明授权Method and apparatus for selectively conditioning a polished pad used in planarizng substrates 失效用于选择性地调节用于平面化衬底的抛光垫的方法和装置
公开(公告)号：US5975994A
公开(公告)日：1999-11-02
申请号：US873059
申请日：1997-06-11
IPC分类号： B24B49/10 , B24B49/18 , B24B53/007 , B24B53/02 , B24B1/00
CPC分类号： B24B53/017 , B24B49/10 , B24B49/18 , B24B53/02
摘要： A method and apparatus for selectively conditioning a planarizing surface of a polishing pad. In one embodiment, a conditioning system has a carrier assembly with an arm that may be positioned over a polishing pad, a conditioning element coupled to the arm, and an actuator coupled to the arm to move the conditioning element into engagement with the planarizing surface of the polishing pad. The conditioning element is an abrasive member, such as an abrasive disk or a brush. The conditioning system may also have a controller operatively coupled to the engagement actuator to control an operating parameter of the conditioning element as a function of the distribution of a surface characteristic across the planarizing surface of the polishing pad.
摘要翻译： 一种用于选择性地调节抛光垫的平坦化表面的方法和装置。 在一个实施例中，调节系统具有支架组件，其具有臂，所述臂可以被定位在抛光垫上方，耦合到所述臂的调节元件以及联接到所述臂的致动器以使所述调节元件与所述调节元件的平坦化表面 抛光垫。 调理元件是磨料构件，例如研磨盘或刷子。 调节系统还可以具有可操作地耦合到接合致动器的控制器，以根据抛光垫的平坦化表面上的表面特性的分布来控制调节元件的操作参数。
-
2.发明授权Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers 有权端点检测器和用于测量半导体晶片化学机械抛光中晶片厚度变化的方法公开(公告)号：US06208425B1
公开(公告)日：2001-03-27
申请号：US09314594
申请日：1999-05-19
IPC分类号： G01B902
CPC分类号： B24B37/013 , B24B49/12 , G01B11/026 , G01B11/0608 , G01B11/0683 , H01L21/30625 , H01L22/26
摘要： The present invention is an endpoint detector and a method for quickly and accurately measuring the change in thickness of a wafer in chemical-mechanical polishing processes. The endpoint detector has a reference platform, a measuring face, and a distance measuring device. The reference platform is positioned proximate to the wafer carrier, and the reference platform and measuring device are positioned apart from one another by a known, constant distance. The measuring face is fixedly positioned with respect to the wafer carrier at a location that allows the measuring device to engage the measuring face when the wafer is positioned on the reference platform. Each time the measuring device engages the measuring surface, it measures the displacement of the measuring face with respect to the measuring device. The displacement of the measuring face is proportional to the change in thickness of the wafer between measurements.
摘要翻译： 本发明是用于在化学机械抛光工艺中快速且准确地测量晶片厚度变化的端点检测器和方法。 端点检测器具有参考平台，测量面和距离测量装置。 参考平台靠近晶片载体定位，并且参考平台和测量装置通过已知的恒定距离彼此分开定位。 当晶片定位在参考平台上时，测量面相对于晶片载体固定地定位在允许测量装置接合测量面的位置。 每次测量装置接合测量表面时，它测量测量面相对于测量装置的位移。 测量面的位移与测量之间的晶片厚度变化成正比。
-
公开(公告)号：US5777739A
公开(公告)日：1998-07-07
申请号：US602617
申请日：1996-02-16
IPC分类号： B24B37/013 , B24B49/12 , G01B11/02 , G01B11/06 , H01L21/306 , H01L21/66 , G01B9/02
CPC分类号： B24B37/013 , B24B49/12 , G01B11/026 , G01B11/0608 , G01B11/0683 , H01L21/30625 , H01L22/26
摘要： The present invention is an endpoint detector and a method for quickly and accurately measuring the change in thickness of a wafer in chemical-mechanical polishing processes. The endpoint detector has a reference platform, a measuring face, and a distance measuring device. The reference platform is positioned proximate to the wafer carrier, and the reference platform and measuring device are positioned apart from one another by a known, constant distance. The measuring face is fixedly positioned with respect to the wafer carrier at a location that allows the measuring device to engage the measuring face when the wafer is positioned on the reference platform. Each time the measuring device engages the measuring surface, it measures the displacement of the measuring face with respect to the measuring device. The displacement of the measuring face is proportional to the change in thickness of the wafer between measurements.
-
4.发明授权Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers 失效端点检测器和用于测量半导体晶片化学机械抛光中晶片厚度变化的方法
公开(公告)号：US5936733A
公开(公告)日：1999-08-10
申请号：US107353
申请日：1998-06-30
IPC分类号： B24B37/013 , B24B49/12 , G01B11/02 , G01B11/06 , H01L21/306 , H01L21/66 , G01B9/02
CPC分类号： B24B37/013 , B24B49/12 , G01B11/026 , G01B11/0608 , G01B11/0683 , H01L21/30625 , H01L22/26
摘要： The present invention is an endpoint detector and a method for quickly and accurately measuring the change in thickness of a wafer in chemical-mechanical polishing processes. The endpoint detector has a reference platform, a measuring face, and a distance measuring device. The reference platform is positioned proximate to the wafer carrier, and the reference platform and measuring device are positioned apart from one another by a known, constant distance. The measuring face is fixedly positioned with respect to the wafer carrier at a location that allows the measuring device to engage the measuring face when the wafer is positioned on the reference platform. Each time the measuring device engages the measuring surface, it measures the displacement of the measuring face with respect to the measuring device. The displacement of the measuring face is proportional to the change in thickness of the wafer between measurements.
摘要翻译： 本发明是用于在化学机械抛光工艺中快速且准确地测量晶片厚度变化的端点检测器和方法。 端点检测器具有参考平台，测量面和距离测量装置。 参考平台靠近晶片载体定位，并且参考平台和测量装置通过已知的恒定距离彼此分开定位。 当晶片定位在参考平台上时，测量面相对于晶片载体固定地定位在允许测量装置接合测量面的位置。 每次测量装置接合测量表面时，它测量测量面相对于测量装置的位移。 测量面的位移与测量之间的晶片厚度变化成正比。
-
5.发明授权Apparatus and method for planar end-point detection during chemical-mechanical polishing 失效化学机械抛光过程中平面端点检测的装置和方法
公开(公告)号：US5738562A
公开(公告)日：1998-04-14
申请号：US590541
申请日：1996-01-24
IPC分类号： B24B37/013 , B24B49/12 , B24B49/16
CPC分类号： B24B37/013 , B24B49/12
摘要： A chemical-mechanical polishing apparatus includes a slurry-wetted polishing pad attached to a substantially planar surface of a platen. A wafer carrier is positioned in close proximity to the platen, and it has a substantially planar surface to which one side of a semiconductor wafer is removably attachable so that an opposing side of the semiconductor wafer is disposed against the polishing pad. An actuator imparts a translational motion to the platen so that the polishing pad moves relative to and in polishing contact with the semiconductor wafer. A sensor detects a change in the imparted translational motion corresponding to a change in the coefficient of friction between the polishing pad and the opposing side of the semiconductor wafer indicative of a planar end point on the opposing side of the semiconductor wafer. The sensor preferably includes a laser and a laser detector using a laser reflection or laser interferometric method to detect the change in the imparted translational motion. Also, the apparatus preferably includes a controller coupled to the sensor and the actuator to adjust the actuator in response to the sensor detecting a change in the imparted translational motion.
摘要翻译： 化学机械抛光装置包括附着在压板的基本平坦的表面上的浆液润湿的抛光垫。 晶片载体被定位成靠近压板，并且其具有基本平坦的表面，半导体晶片的一侧可移除地附接到该表面，使得半导体晶片的相对侧抵靠抛光垫设置。 致动器向平台施加平移运动，使得抛光垫相对于半导体晶片相对于其和与半导体晶片进行抛光接触而移动。 传感器检测对应于抛光垫和半导体晶片的相反侧之间的摩擦系数的变化的赋予的平移运动的变化，其指示半导体晶片的相对侧上的平面终点。 传感器优选地包括激光器和使用激光反射或激光干涉法的激光检测器来检测所赋予的平移运动的变化。 此外，该装置优选地包括耦合到传感器和致动器的控制器，以响应于传感器来检测致动器的变化来调节致动器。
-
公开(公告)号：US09042697B2
公开(公告)日：2015-05-26
申请号：US13483542
申请日：2012-05-30
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/12007 , G02B6/136 , G02F1/011 , G02F1/0147 , G02F2203/15
摘要： A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.
摘要翻译： 用于热光器件的谐振器以与波导相同的工艺步骤形成，并且形成在下包层的凹陷中，同时波导形成在下包层的表面上。 由于谐振器和波导的上表面基本上是共面的，因此在波导和谐振器彼此前向的区域中的波导和谐振器之间的纵横比减小，从而增加了谐振器的带宽。 在形成谐振器和波导之前，通过光掩模和蚀刻下部包层形成凹陷。 还教导了形成在下部包层的多个凹部中的多个谐振器。 为了减小谐振器带宽，当在表面上形成谐振器时，在下包层的凹陷中形成波导。 还教导了用这些谐振器形成的热光器件。
-
公开(公告)号：US08195020B2
公开(公告)日：2012-06-05
申请号：US11951796
申请日：2007-12-06
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/12007 , G02B6/136 , G02F1/011 , G02F1/0147 , G02F2203/15
摘要： A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.
摘要翻译： 用于热光器件的谐振器以与波导相同的工艺步骤形成，并且形成在下包层的凹陷中，同时波导形成在下包层的表面上。 由于谐振器和波导的上表面基本上是共面的，因此在波导和谐振器彼此前向的区域中的波导和谐振器之间的纵横比减小，从而增加了谐振器的带宽。 在形成谐振器和波导之前，通过光掩模和蚀刻下部包层形成凹陷。 还教导了形成在下部包层的多个凹部中的多个谐振器。 为了减小谐振器带宽，当在表面上形成谐振器时，在下包层的凹陷中形成波导。 还教导了用这些谐振器形成的热光器件。
-
公开(公告)号：US07565039B2
公开(公告)日：2009-07-21
申请号：US10929210
申请日：2004-08-30
CPC分类号： G02B6/125 , G02F1/0102 , G02F1/0147 , G02F1/2257 , G02F2201/30 , G02F2201/307 , G02F2202/104
摘要： Resistive heaters formed in two mask counts on a surface of a grating of a thermo optic device thereby eliminating one mask count from prior art manufacturing methods. The resistive heater is comprised of a heater region and a conductive path region formed together in a first mask count from a relatively high resistance material. A conductor formed from a relatively low resistance material is formed directly on the conductive path region in a second mask count. Thermo optic devices formed by these two mask count methods are also described.
摘要翻译： 在热光器件的光栅的表面上形成两个掩模计数的电阻加热器，从而从现有技术的制造方法中消除一个掩模计数。 电阻加热器包括加热器区域和形成在来自相对高电阻材料的第一掩模计数中的导电路径区域。 由相对低电阻材料形成的导体以第二掩模计数直接形成在导电路径区域上。 还描述了通过这两种掩模计数方法形成的热光学器件。
-
9.发明授权Small grain size, conformal aluminum interconnects and method for their formation 失效小晶粒尺寸，共形铝互连及其形成方法公开(公告)号：US07560816B2
公开(公告)日：2009-07-14
申请号：US11897842
申请日：2007-08-31
CPC分类号： H01L21/76876 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877
摘要： A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
摘要翻译： 第一层氮化钛（TiN）形成在诸如互连通孔的半导体结构上。 然后，在第一TiN层上形成第二TiN层。 第一层TiN是无定形的。 第二层TiN是多晶的，具有混晶粒取向。 最后，在第二层氮化钛上形成铝膜。 可选地，在形成第一层氮化钛的步骤之前，在半导体结构上形成硅化钛层。 根据本发明形成的互连件具有晶粒尺寸大约小于0.25微米的多晶铝膜。
-
公开(公告)号：US07114404B2
公开(公告)日：2006-10-03
申请号：US10674963
申请日：2003-09-29
CPC分类号： G01F1/40 , G01F1/42 , G01P13/0006 , G01P13/0013 , G01P13/0033 , G05D7/0635 , Y10T29/41 , Y10T137/0396 , Y10T137/7722 , Y10T137/775 , Y10T137/8242
摘要： Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.
-
-
-
-
-
-
-
-
-
搜索结果
101 条记录 (耗时 0.023 秒)
