公开(公告)号：US20150159296A1

公开(公告)日：2015-06-11

申请号：US14266229

申请日：2014-04-30

Applicant: Pengdi HAN ,  Jian TIAN

Inventor： Pengdi HAN ,  Jian TIAN

IPC: C30B11/00 ,  C30B11/14 ,  C30B29/32 ,  C30B11/02

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

公开(公告)号：US20160251773A1

公开(公告)日：2016-09-01

申请号：US14941902

申请日：2015-11-16

Applicant: CTG ADVANCED MATERIALS, LLC

Inventor： Pengdi HAN ,  Jian TIAN

IPC: C30B11/00 ,  C30B29/30 ,  H01L41/187 ,  C30B11/02 ,  C30B11/04 ,  C30B11/14 ,  C30B29/32

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

公开(公告)号：US09219223B2

公开(公告)日：2015-12-22

申请号：US13025751

申请日：2011-02-11

Applicant: Pengdi Han

Inventor： Pengdi Han

IPC: H01L41/09 ,  H01L41/16 ,  H01L41/187 ,  H01L41/29 ,  H01L41/257 ,  H01L41/338 ,  G01C19/5607

CPC classification number: A61B8/4494 ,  G01C19/5607 ,  H01L41/0906 ,  H01L41/0986 ,  H01L41/0993 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/183 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/257 ,  H01L41/29 ,  H01L41/338 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Preparations of piezoelectric single crystal elements involving the steps of mechanically finishing a single crystal element with select cuttings, coating electrodes on a pair of Z surfaces, poling the single crystal along the axis under a 500V/mm electric field and a product made by the process thereof.

Abstract translation: 包括以下步骤的压电单晶元件的制备，所述步骤包括用选择的切屑机械精加工单晶元件，在一对Z表面上涂覆电极，在500V / mm电场下沿着<011>轴倾斜单晶，制成产品 通过其过程。

公开(公告)号：US20160192905A1

公开(公告)日：2016-07-07

申请号：US14941751

申请日：2015-11-16

Applicant: CTG ADVANCED MATERIALS, LLC

Inventor： PENGDI HAN

IPC: A61B8/00 ,  H01L41/338 ,  H01L41/257 ,  H01L41/29 ,  H01L41/113 ,  H01L41/187

CPC classification number: A61B8/4494 ,  G01C19/5607 ,  H01L41/0906 ,  H01L41/0986 ,  H01L41/0993 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/183 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/257 ,  H01L41/29 ,  H01L41/338 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Piezoelectric crystal elements are provided having preferred cut directions that optimize the shear mode piezoelectric properties. In the discovered cut directions, the crystal elements have super-high piezoelectric performance with d15, d24 and d36 shear modes at room temperature. The d15 shear mode crystal gives a maximum d value and is free from the cross-talk of d11 and d16. The d36 mode is extremely reliable compared to other shear elements due to its ready re-poling capability. The crystal elements may be beneficially used for high-sensitive acoustic transducers.

Abstract translation: 提供压电晶体元件，其具有优化剪切模式压电特性的优选切割方向。 在发现的切割方向上，晶体元件在室温下具有d15，d24和d36剪切模式的超高压电性能。 d15剪切模式晶体给出最大d值，并且没有d11和d16的串扰。 与其他剪切元件相比，d36模式是非常可靠的，因为它具有准备的重新定位能力。 晶体元件可有利地用于高灵敏度的声换能器。

公开(公告)号：US09260794B2

公开(公告)日：2016-02-16

申请号：US14266229

申请日：2014-04-30

Applicant: CTG ADVANCED MATERIALS, LLC

Inventor： Pengdi Han ,  Jian Tian

IPC: C30B11/00 ,  C30B9/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06 ,  C30B11/08 ,  C30B35/00 ,  C30B11/02 ,  C30B11/14 ,  C30B29/32

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).