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103 条记录 (耗时 0.028 秒)

    HOLOGRAPHIC MICROSCOPE
    5.
    发明申请
    HOLOGRAPHIC MICROSCOPE 有权

    公开(公告)号：US20220206432A1

    公开(公告)日：2022-06-30

    申请号：US17403960

    申请日：2021-08-17

    申请人： Korea Photonics Technology Institute

    发明人： Seon Kyu YOON ,  Ha Mong Shim ,  Jin Su Lee ,  Kwang Hoo Lee

    IPC分类号： G03H1/00 ,  G03H1/04 ,  G03H1/08

    摘要： According to an embodiment, a holographic microscope comprises a light source, an optical system splitting light emitted from the light source into an object and a reflective mirror and inducing interference between light reflected by the object or transmitted through the object and light reflected by the reflective mirror, a first image sensor receiving the interference light and sensing interference information for the interference light, a second image sensor receiving the light reflected by the object or transmitted through the object and sensing information for the received light, and an image processor deriving a shape of the object based on the interference information sensed by the first image sensor and the information sensed by the second image sensor.

    SYSTEM AND METHOD FOR CONTROLLING EMERGENCY BELL BASED ON SOUND
    6.
    发明申请
    SYSTEM AND METHOD FOR CONTROLLING EMERGENCY BELL BASED ON SOUND 有权

    公开(公告)号：US20220148616A1

    公开(公告)日：2022-05-12

    申请号：US17514460

    申请日：2021-10-29

    申请人： Korea Photonics Technology Institute

    发明人： Seon Man Kim ,  Kwang Hoon Lee ,  Hoe Min Kim ,  Sung Kuk Chun ,  Seon Kyu Yoon ,  Jin Su Lee

    IPC分类号： G10L25/51 ,  G10L25/30 ,  G08B3/00 ,  G08B25/00 ,  G08B23/00

    摘要： According to an embodiment of the disclosure, a system for controlling an emergency bell based on sound comprises an emergency bell device installed in a crime area, gathering sound information generated in the crime area, detecting an emergency event from the gathered sound information, and generating an emergency bell operation signal, an analysis server receiving, in real-time, the sound information from the emergency bell device if the emergency bell operation signal is received, classifying per-time key sound sources in the sound information, and providing a situation analysis result on whether a crime occurs using the classified per-time key sound sources, and a control server receiving the situation analysis result and providing on-site dispatch information or situation response information to a security terminal in charge of the crime area based on the received situation analysis result.

    SELF-POWERED SENSOR AND SENSING SYSTEM INCLUDING THE SAME
    7.
    发明申请
    SELF-POWERED SENSOR AND SENSING SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20220029042A1

    公开(公告)日：2022-01-27

    申请号：US17380683

    申请日：2021-07-20

    申请人： Korea Photonics Technology Institute

    发明人： Hyo Jin KIM

    IPC分类号： H01L31/153 ,  H01L31/0735 ,  H01L33/00 ,  H01L31/109

    摘要： According to an embodiment, a self-powered sensor comprises at least one first layer emitting light in a preset wavelength band by receiving power from an outside, or receiving the emitted light reflected by an object, at least one second layer receiving light and generating a current, and a plurality of connectors each grown between two adjacent ones of the at least one first layer and the at least one second layer, the plurality of connectors transferring the generated current to the outside or transferring the power received from the outside to the at least one first layer and the at least one second layer.

    Nitride semiconductor light-emitting device, and method for manufacturing same
    8.
    发明授权
    Nitride semiconductor light-emitting device, and method for manufacturing same 有权

    公开(公告)号：US10662511B2

    公开(公告)日：2020-05-26

    申请号：US15563468

    申请日：2015-06-30

    申请人： KOREA PHOTONICS TECHNOLOGY INSTITUTE

    发明人： Seung-Jae Lee ,  Sung-Chul Choi ,  Jong-Hyeob Baek ,  Seong-Ran Jeon ,  Sang-Mook Kim ,  Tae Hoon Chung

    IPC分类号： H01L33/32 ,  H01L33/00 ,  C22C38/04 ,  H01L33/22

    摘要： A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.