公开(公告)号：US08623993B2

公开(公告)日：2014-01-07

申请号：US13532631

申请日：2012-06-25

申请人： Chian-Shu Hsu ,  Yen-Ju Cheng ,  Jhong-Sian Wu ,  Chiu-Hsiang Chen ,  Huan-Hsuan Chang ,  Yung-Lung Chen ,  Sheng-Wen Cheng

发明人： Chian-Shu Hsu ,  Yen-Ju Cheng ,  Jhong-Sian Wu ,  Chiu-Hsiang Chen ,  Huan-Hsuan Chang ,  Yung-Lung Chen ,  Sheng-Wen Cheng

IPC分类号： C08G75/00

CPC分类号： C08G61/126 ,  C07D495/04 ,  C07D495/14 ,  C07D495/22 ,  C08G61/123 ,  C08G61/124 ,  C08G69/40 ,  C08G73/1064 ,  C08G75/06 ,  C08G75/32 ,  C08G77/60 ,  C08G2261/12 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/18 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/3247 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/514 ,  C08G2261/91 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0044 ,  H01L51/0094 ,  H01L51/44

摘要： A series of ladder-type multifused arenes (hexacyclic, heptacyclic and nonacyclic units) and the synthesizing methods thereof are provided. The ladder-type multifused arenes are copolymerized with various electron-deficient acceptor units to afford various p-type low-band gap conjugated copolymers.

摘要翻译： 提供了一系列梯形多重芳烃（六环，七环和非环单元）及其合成方法。 梯形多孔芳烃与各种电子缺陷受体单元共聚，得到各种p型低带隙共轭共聚物。

公开(公告)号：US09577308B2

公开(公告)日：2017-02-21

申请号：US14204694

申请日：2014-03-11

申请人： National Chiao Tung University

发明人： Chun-Hsing Li ,  Chien-Nan Kuo ,  Chun-Lin Ko

IPC分类号： H01P5/02 ,  H01P1/04 ,  H01L23/00 ,  H01P3/02 ,  H01L23/64

CPC分类号： H01P5/02 ,  H01L23/64 ,  H01L24/49 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01P1/04 ,  H01P3/026 ,  H01P5/028 ,  Y10T29/49002 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An interconnecting structure for electrically connecting a first electronic device with a second electronic device is provided. The first electronic device has two first bond-pads, and the second electronic device has two second bond-pads electrically connected to the two first bond-pads respectively. The interconnecting structure includes a signal transmission structure electrically connected to the two first bond-pads and the two second bond-pads; and a ground device disposed between the first electronic device and the second electronic device so that the first electronic device and the second electronic device have a same ground potential.

摘要翻译： 提供了用于将第一电子设备与第二电子设备电连接的互连结构。 第一电子器件具有两个第一接合焊盘，并且第二电子器件具有分别与两个第一接合焊盘电连接的两个第二接合焊盘。 互连结构包括电连接到两个第一接合焊盘和两个第二接合焊盘的信号传输结构; 以及设置在第一电子设备和第二电子设备之间的接地设备，使得第一电子设备和第二电子设备具有相同的接地电位。

公开(公告)号：US08148218B2

公开(公告)日：2012-04-03

申请号：US13044597

申请日：2011-03-10

申请人： Chun-Yen Chang

发明人： Chun-Yen Chang

IPC分类号： H01L21/335 ,  H01L21/336

CPC分类号： H01L29/0843 ,  H01L21/8258 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7783

摘要： The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and doping concentration of group III-V materials are increased by the heteroepitaxy of group III-V and group IV materials and the structural design of elements. The method comprises: preparing a substrate; depositing a dummy gate material layer on the substrate and defining a dummy gate from the dummy gate material layer by photolithography; performing doping by self-aligned ion implantation using the dummy gate as a mask and performing activation at high temperature, so as to form source-drain; removing the dummy gate; forming a recess in the substrate between the source-drain pair by etching; forming a channel-containing stacked element in the recess by epitaxy; and forming a gate on the channel-containing stacked element.

摘要翻译： 本发明涉及具有III-V族通道和IV族源极漏极的半导体器件及其制造方法。 特别是Ⅲ-Ⅴ族材料的能级密度和掺杂浓度通过III-V族和IV族材料的异质外延和元素的结构设计增加。 该方法包括：制备基材; 在所述衬底上沉积虚拟栅极材料层并通过光刻从所述虚拟栅极材料层限定伪栅极; 使用伪栅极作为掩模通过自对准离子注入进行掺杂，并在高温下进行激活，以形成源极 - 漏极; 去除虚拟门; 通过蚀刻在源极 - 漏极对之间的衬底中形成凹陷; 通过外延在所述凹部中形成通道堆叠元件; 以及在含通道的堆叠元件上形成栅极。

公开(公告)号：US09191126B2

公开(公告)日：2015-11-17

申请号：US13853065

申请日：2013-03-29

申请人： NATIONAL CHIAO TUNG UNIVERSITY

发明人： Chen-Yi Lee ,  Wei-Hao Sung ,  Shu-Ping Lin

IPC分类号： H04B13/00 ,  H04W28/04

CPC分类号： H04B13/005 ,  H04W28/04

摘要： A body channel communication method is disclosed including the following steps. Whether or not a body channel is established is detected. When that a body channel is established is detected, a check packet is received from an electrical device, which is at another end of the body channel, through the body channel. A current interference power of the body channel is estimated according to the received check packet. A current transmission mode for the body channel is obtained according to the current interference power. Data is transmitted through the body channel, which is set to the current transmission mode. Further, a body channel communication device is also disclosed.

摘要翻译： 公开了一种身体通道通信方法，包括以下步骤。 检测到身体信道是否建立。 当检测到身体信道建立时，通过身体信道从位于身体信道的另一端的电气设备接收到检查包。 根据接收到的检查包估计身体信道的当前干扰功率。 根据当前的干扰功率获得身体信道的当前传输模式。 通过身体通道传输数据，该通道设置为当前传输模式。 此外，还公开了身体通道通信装置。