公开(公告)号：US20170194098A1

公开(公告)日：2017-07-06

申请号：US15462954

申请日：2017-03-20

Applicant: Chun-Yen Chang

Inventor： Chun-Yen Chang

IPC: H01G4/06 ,  H01G4/30 ,  H01G4/008

CPC classification number: H01G4/06 ,  H01G4/002 ,  H01G4/008 ,  H01G4/255 ,  H01G4/30

Abstract: A magnetic capacitor includes a first electrode layer formed by depositing a first conducting material including graphene, a second electrode layer formed by depositing a second conducting material including graphene, and an insulator layer located between the first electrode layer and the second electrode layer. The magnetic capacitor further includes a first magnetized layer that includes one or more first ferro-magnetic elements that are magnetized to apply a first magnetic field to the insulator layer, and a second magnetized layer that includes one or more second ferro-magnetic elements that are magnetized to apply a second magnetic field to the insulator layer. The insulator layer is located between the first magnetized layer and the second magnetized layer. The first magnetic field and the second magnetic field improve a first electrical property of the magnetic capacitor.

公开(公告)号：US08148218B2

公开(公告)日：2012-04-03

申请号：US13044597

申请日：2011-03-10

Applicant: Chun-Yen Chang

Inventor： Chun-Yen Chang

IPC: H01L21/335 ,  H01L21/336

CPC classification number: H01L29/0843 ,  H01L21/8258 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7783

Abstract: The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and doping concentration of group III-V materials are increased by the heteroepitaxy of group III-V and group IV materials and the structural design of elements. The method comprises: preparing a substrate; depositing a dummy gate material layer on the substrate and defining a dummy gate from the dummy gate material layer by photolithography; performing doping by self-aligned ion implantation using the dummy gate as a mask and performing activation at high temperature, so as to form source-drain; removing the dummy gate; forming a recess in the substrate between the source-drain pair by etching; forming a channel-containing stacked element in the recess by epitaxy; and forming a gate on the channel-containing stacked element.

Abstract translation: 本发明涉及具有III-V族通道和IV族源极漏极的半导体器件及其制造方法。 特别是Ⅲ-Ⅴ族材料的能级密度和掺杂浓度通过III-V族和IV族材料的异质外延和元素的结构设计增加。 该方法包括：制备基材; 在所述衬底上沉积虚拟栅极材料层并通过光刻从所述虚拟栅极材料层限定伪栅极; 使用伪栅极作为掩模通过自对准离子注入进行掺杂，并在高温下进行激活，以形成源极 - 漏极; 去除虚拟门; 通过蚀刻在源极 - 漏极对之间的衬底中形成凹陷; 通过外延在所述凹部中形成通道堆叠元件; 以及在含通道的堆叠元件上形成栅极。

公开(公告)号：US20090278165A1

公开(公告)日：2009-11-12

申请号：US12291396

申请日：2008-11-07

Applicant: Chun-Yen Chang ,  Tsung Hsi Yang

Inventor： Chun-Yen Chang ,  Tsung Hsi Yang

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/10 ,  H01L33/12 ,  H01L33/32

Abstract: A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.

Abstract translation: 提供了在基于IV族的半导体衬底上形成的发光器件（LED）结构。 LED结构包括基于IV族的衬底，在基于IV族的衬底上形成的AlN成核层，在AlN成核层上形成的GaN外延层，形成在外延层上的分布式布拉格反射器（DBR）多层结构 层和形成在DBR多层结构上的LED活性层。

公开(公告)号：US20090098714A1

公开(公告)日：2009-04-16

申请号：US12010242

申请日：2008-01-23

Applicant: Chun-Yen Chang ,  Tsung-Hsi Yang ,  Shih-Guo Shen

Inventor： Chun-Yen Chang ,  Tsung-Hsi Yang ,  Shih-Guo Shen

IPC: H01L21/205

CPC classification number: H01L21/0265 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639

Abstract: GaN layer on semiconductor substrate is grown by using GaN nanorod buffer layer. Firstly, semiconductor substrate is cleaned and thermally degassed to remove the contaminant in the growth chamber. After the above step, the GaN nanorods layer is grown under the N-rich condition. Then, GaN epilayer is overgrown on the GaN nanorods layer under the Ga-rich condition for forming Group of III-Nitrides semiconductor layer on the semiconductor substrate.

Abstract translation: 通过使用GaN纳米棒缓冲层来生长半导体衬底上的GaN层。 首先，对半导体衬底进行清洁并热脱气以除去生长室中的污染物。 在上述步骤之后，在富氮条件下生长GaN纳米棒层。 然后，在半导体衬底上形成III族氮化物半导体层的Ga富集条件下，在GaN纳米棒层上过度生长GaN外延层。

公开(公告)号：US20070268724A1

公开(公告)日：2007-11-22

申请号：US11751072

申请日：2007-05-21

Applicant: Chih-Liang Pan ,  Chun-Yen Chang ,  Han-Chang Cheng

Inventor： Chih-Liang Pan ,  Chun-Yen Chang ,  Han-Chang Cheng

IPC: F21V7/04

CPC classification number: G02F1/133611 ,  G02F1/133608 ,  G02F2001/133628

Abstract: Disclosed are a backlight module and a liquid crystal display (LCD) including the same. The backlight module has a heat conductive structure so as to reduce the non-uniformity phenomenon of display. The backlight module comprises a frame, a reflective sheet, a heat-conductive plate, and a circuit board, wherein the frame has a bottom portion and at least one substantially step-typed through hole is formed therein. The reflective sheet is disposed on the inner surface of the bottom portion, and the heat-conductive plate is disposed in the step-typed through hole, and is spaced from the reflection sheet at a predetermined distance. The circuit board is disposed on the outer surface of the bottom portion of the frame, and has at least one electrical component that is received in the substantially step-typed through hole.

Abstract translation: 公开了一种背光模块和包括其的液晶显示器（LCD）。 背光模块具有导热结构，以减少显示的不均匀现象。 背光模块包括框架，反射片，导热板和电路板，其中框架具有底部，并且在其中形成至少一个基本上阶梯式的通孔。 反射片设置在底部的内表面上，并且导热板设置在台阶型通孔中，并且以预定距离与反射片隔开。 电路板设置在框架的底部的外表面上，并具有至少一个电气部件，该电气部件被容纳在大致阶梯型通孔中。

公开(公告)号：US20070134901A1

公开(公告)日：2007-06-14

申请号：US11652639

申请日：2007-01-12

Applicant: Edward Chang ,  Guangli Luo ,  Tsung-Hsi Yang ,  Chun-Yen Chang

Inventor： Edward Chang ,  Guangli Luo ,  Tsung-Hsi Yang ,  Chun-Yen Chang

IPC: H01L21/28

CPC classification number: H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02546 ,  H01L33/0066

Abstract: This invention provides a process for growing Ge epitaixial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaixial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaixial layer, such as Si0.1Ge0.9 in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si0.1Ge0.9 due to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 μm Si0.05Ge0.95 layer, and/or optionally a further 0.8 μm Si0.02Ge0.98 layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaixial layers. Finally, a GaAs epitaixial layer is grown on said Ge film by using MOCVD.

Abstract translation: 本发明提供了一种通过使用超高真空化学气相沉积（UHVCVD）在Si衬底上生长Ge表面层的方法，随后通过使用金属有机化学气相沉积在所述Ge附着层的表面的Ge膜上生长GaAs层 （MOCVD）。 该方法包括以下步骤：首先，在标准清洁程序中预清洁硅晶片，用HF溶液浸渍并预烘烤以除去其天然氧化物层。 然后，通过使用超高真空化学气相沉积在所述Si衬底上生长厚度为0.8μm的高Ge组成的表层，例如Si 0.1 O 0.1 Ge 0.9 在某些条件下 因此，由于该层和Si衬底之间的大的失配，产生许多位错并且位于界面附近和部分低Ge Ge 0.9的部分位置。 此外，随后的0.8μm的Si 0.05 Al 0.1 O 0.95层和/或任选的另外的0.8μm的Si 0.02 Co 0.98 < SUB>层，生长。 它们形成所述层的应变界面可以非常有效地弯曲和终止传播的向上错位。 因此，在所述附着层的表面上生长纯Ge的膜。 最后，通过使用MOCVD在所述Ge膜上生长GaAs外延层。

公开(公告)号：US20050233495A1

公开(公告)日：2005-10-20

申请号：US10859764

申请日：2004-06-03

Applicant: Tsung-Hsi Yang ,  Chung-Liang Lee ,  Chu-Shou Yang ,  Guangli Luo ,  Wu-Ching Chou ,  Chun-Yen Chang ,  Tsung-Yeh Yang

Inventor： Tsung-Hsi Yang ,  Chung-Liang Lee ,  Chu-Shou Yang ,  Guangli Luo ,  Wu-Ching Chou ,  Chun-Yen Chang ,  Tsung-Yeh Yang

IPC: C30B23/08 ,  C23C14/06 ,  C23C16/30 ,  C30B23/02 ,  C30B29/48 ,  C30B29/52 ,  H01L21/00 ,  H01L21/06 ,  H01L21/10 ,  H01L21/203 ,  H01L21/205 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/365 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L31/0296 ,  C30B23/02 ,  C30B29/48 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/0087

Abstract: A technique to grow high quality and large area ZnSe layer on Si substrate is provided, comprising growing GexSi1-x/Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and finally growing a ZnSe film on top Ge buffer layers. Two concepts are applied in the process of this invention, the first one is to block the dislocations generated from GexSi1-x epitaxial layers and to terminate the propagated upward dislocations by using strained interfaces, accordingly the dislocation density of ZnSe layer is greatly reduced and the surface roughness is improved; the second concept is to solve the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate, and that is free from diffusion problems between different atoms while generally growing ZnSe layers on Si substrate.

Abstract translation: 提供了在Si衬底上生长高质量和大面积ZnSe层的技术，其包括在Si衬底上生长Ge x Si x Si 1-x / Ge外延层， 高真空化学气相沉积（UHVCVD），最后在顶部Ge缓冲层上生长ZnSe膜。 在本发明的方法中应用了两个概念，第一个概念是为了阻止由Ge x 1 Si 1-x N外延层产生的位错并终止传播的向上位错 通过使用应变界面，ZnSe层的位错密度大大降低，表面粗糙度提高; 第二个概念是解决极性材料在非极性材料上使用偏角Si衬底生长的反相域问题，并且在不同原子之间没有扩散问题，而在Si衬底上通常生长ZnSe层 。

公开(公告)号：US09607764B2

公开(公告)日：2017-03-28

申请号：US14845463

申请日：2015-09-04

Applicant: Chun-Yen Chang

Inventor： Chun-Yen Chang

IPC: B05D5/12 ,  H01G4/00 ,  H01G4/06 ,  H01G4/30 ,  H01G4/002 ,  H01G4/255

CPC classification number: H01G4/06 ,  H01G4/002 ,  H01G4/008 ,  H01G4/255 ,  H01G4/30

Abstract: A method for fabricating a magnetic capacitor is provided. A first conducting material is deposited to form a first electrode layer. One or more first ferro-magnetic elements are deposited to form magnetic layer and are aligned and magnetized to produce a magnetic field. An insulating material is deposited to form an insulating layer. A second conducting material is deposited to form a second electrode layer. The one or more ferro-magnetic elements are aligned and magnetized to apply the magnetic field to the insulator layer so that the magnetic field is perpendicular to the first electrode layer and the second electrode layer, and so that the magnetic field is periodic along the length of the insulator layer and results in electric dipoles being formed in the insulator layer when a voltage is applied between the first electrode layer and the second electrode layer.

公开(公告)号：US20140092017A1

公开(公告)日：2014-04-03

申请号：US13886626

申请日：2013-05-03

Applicant: Chun-Yen Chang ,  Wei-Kai Liou

Inventor： Chun-Yen Chang ,  Wei-Kai Liou

IPC: G09G5/00

CPC classification number: G09G5/006 ,  G06F3/0425 ,  G06F3/1454 ,  G09G3/003 ,  H04N9/3185

Abstract: The invention discloses an interactive simulated-globe display system including an imaging body, N image-projecting units, a data processing unit, an optical pointer, and M image-capturing units where N and M are respectively a natural number. The N image-projecting units project N images onto an external hemispheric surface of the imaging body. The N images constitute a hemi-globe image of a whole globe image. The data processing unit detects an indicated spot projected on the external hemispheric surface by the M image-capturing units, judges if a track relative to the indicated spot meets one of a plurality of position input rules, and if YES, executes an instruction corresponding to said one position input rule.

Abstract translation: 本发明公开了一种交互式模拟地球显示系统，包括成像体，N个图像投影单元，数据处理单元，光学指针和M个图像捕获单元，其中N和M分别是自然数。 N个图像投影单元将N个图像投影到成像体的外半球表面上。 N图像构成全球图像的半球形图像。 数据处理单元通过M个图像拍摄单元来检测投影在外半球表面上的指示斑点，判断相对于指示斑点的轨迹是否满足多个位置输入规则中的一个，如果是，则执行对应于 说一个位置输入规则。

公开(公告)号：US07977687B2

公开(公告)日：2011-07-12

申请号：US12291396

申请日：2008-11-07

Applicant: Chun-Yen Chang ,  Tsung Hsi Yang

Inventor： Chun-Yen Chang ,  Tsung Hsi Yang

IPC: H01L33/00

CPC classification number: H01L33/10 ,  H01L33/12 ,  H01L33/32

Abstract: A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.

Abstract translation: 提供了在基于IV族的半导体衬底上形成的发光器件（LED）结构。 LED结构包括基于IV族的衬底，在基于IV族的衬底上形成的AlN成核层，在AlN成核层上形成的GaN外延层，形成在外延层上的分布式布拉格反射器（DBR）多层结构 层和形成在DBR多层结构上的LED活性层。