Media-compatible electrically isolated pressure sensor for high temperature applications
    1.
    发明授权
    Media-compatible electrically isolated pressure sensor for high temperature applications 有权
    介质兼容的电气隔离压力传感器,用于高温应用

    公开(公告)号:US08627559B2

    公开(公告)日:2014-01-14

    申请号:US13620427

    申请日:2012-09-14

    IPC分类号: H05K3/36

    摘要: A method for manufacturing a Micro-Electro-Mechanical System pressure sensor, including forming a gauge wafer including a diaphragm and a pedestal region. The method includes forming an electrical insulation layer disposed on a second surface of the diaphragm region and forming a plurality of sensing elements patterned on the electrical insulation layer disposed on the second surface in the diaphragm region, forming a cap wafer with a central recess in an inner surface and a plurality of through-wafer embedded vias made of an electrically conductive material in the cap wafer, creating a sealed cavity by coupling the inner recessed surface of the cap wafer to the gauge wafer, such that electrical connections from the sensing elements come out to an outer surface of the cap wafer through the vias, and attaching a spacer wafer with a central aperture to the pedestal region with the central aperture aligned to the diaphragm region.

    摘要翻译: 一种微电子机械系统压力传感器的制造方法,包括形成包括隔膜和基座区域的规格晶片。 所述方法包括形成设置在所述隔膜区域的第二表面上的电绝缘层,并且形成在设置在所述隔膜区域中的所述第二表面上的所述电绝缘层上图案化的多个感测元件,形成具有中心凹部的盖晶片 内表面和在盖晶片中由导电材料制成的多个贯通晶片嵌入的通孔,通过将盖晶片的内凹表面与计量晶片结合而形成密封空腔,使得来自感测元件的电连接到达 通过通孔到盖晶片的外表面,以及将具有中心孔的间隔晶片附接到基座区域,其中心孔与膜片区域对准。

    Sensor device package having thermally compliant die pad
    2.
    发明申请
    Sensor device package having thermally compliant die pad 审中-公开
    传感器器件封装,具有热兼容的裸片焊盘

    公开(公告)号:US20080099861A1

    公开(公告)日:2008-05-01

    申请号:US11975618

    申请日:2007-10-19

    申请人: John Dangtran

    发明人: John Dangtran

    IPC分类号: H01L29/84 H01L21/00

    CPC分类号: G01P1/023 G01D11/245

    摘要: A sensor device and a method of forming thereof comprises a die pad having an inner portion and an outer portion. The outer portion is made of steel, aluminum or other metal and is adapted to mount the die pad to a support structure having a first coefficient of thermal expansion (CTE) value and provide a hermetic seal therewith. The outer portion is made of a material having a CTE value substantially complaint with the first CTE value. The inner portion may be made of Invar, Kovar or ceramic material to receive a MEMS device having a second CTE value. The inner portion is made of a material having a CTE value substantially compliant with the second CTE value. The outer portion has a thickness less than that of the inner portion. The die pad may include a trench between outer edges of the outer and inner portions.

    摘要翻译: 传感器装置及其形成方法包括具有内部部分和外部部分的管芯焊盘。 外部由钢,铝或其他金属制成,并且适于将管芯焊盘安装到具有第一热膨胀系数(CTE)值的支撑结构上并与其一起提供气密密封。 外部由具有基本上与第一CTE值相反的CTE值的材料制成。 内部部分可以由Invar,Kovar或陶瓷材料制成,以接收具有第二CTE值的MEMS器件。 内部部分由具有基本上符合第二CTE值的CTE值的材料制成。 外部部分的厚度小于内部部分的厚度。 管芯焊盘可以包括在外部部分和内部部分的外边缘之间的沟槽。

    Temperature compensated RC oscillator for signal conditioning ASIC using source bulk voltage of MOSFET
    3.
    发明授权
    Temperature compensated RC oscillator for signal conditioning ASIC using source bulk voltage of MOSFET 有权
    温度补偿RC振荡器用于使用MOSFET的源体电压进行信号调理ASIC

    公开(公告)号:US08044740B2

    公开(公告)日:2011-10-25

    申请号:US12553931

    申请日:2009-09-03

    申请人: Zhineng Zhu

    发明人: Zhineng Zhu

    IPC分类号: H03L1/02 H03K3/353

    摘要: A temperature compensated CMOS RC oscillator circuit changes the source-bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.

    摘要翻译: 温度补偿CMOS RC振荡器电路使用电阻和温度相关偏置电流改变源体电压,以稳定MOSFET的温度阈值电压变化。 MOSFET的源极通过电阻连接到地。 该温度相关偏置电流也通过该电阻。 当温度升高时,偏置电流也会增加,从而增加了MOSFET的源 - 体电压。 增加的源体电压有助于在高温下稳定MOSFET的阈值电压。 该振荡器中也嵌入节能逻辑,以在较低的功耗下实现更高的频率。 在本发明中,没有高增益运算放大器或高速比较器,这使得所得到的振荡器具有低功率设计,并且可以与其他系统集成到单个芯片中。

    Media-Compatible Electrically Isolated Pressure Sensor For High Temperature Applications
    4.
    发明申请
    Media-Compatible Electrically Isolated Pressure Sensor For High Temperature Applications 有权
    介质兼容的电隔离压力传感器,用于高温应用

    公开(公告)号:US20100304518A1

    公开(公告)日:2010-12-02

    申请号:US12855528

    申请日:2010-08-12

    IPC分类号: H01L21/50

    摘要: A method for manufacturing a Micro-Electro-Mechanical System pressure sensor. The method includes forming a gauge wafer including a diaphragm and a pedestal region. The method includes forming an electrical insulation layer disposed on a second surface of the diaphragm region and forming a plurality of sensing elements patterned on the electrical insulation layer disposed on the second surface in the diaphragm region. The method includes forming a cap wafer with a central recess in an inner surface and a plurality of through-wafer embedded vias made of an electrically conductive material in the cap wafer. The method includes creating a sealed cavity by coupling the inner recessed surface of the cap wafer to the gauge wafer, such that electrical connections from the sensing elements come out to an outer surface of the cap wafer through the vias. The method includes attaching a spacer wafer with a central aperture to the pedestal region with the central aperture aligned to the diaphragm region.

    摘要翻译: 一种微机电系统压力传感器的制造方法。 该方法包括形成包括隔膜和基座区域的规格晶片。 该方法包括形成设置在隔膜区域的第二表面上的电绝缘层,并且形成在设置在隔膜区域中的第二表面上的电绝缘层上图案化的多个感测元件。 该方法包括在内表面中形成具有中心凹部的盖晶片和在盖晶片中由导电材料制成的多个通过晶片的嵌入通孔。 该方法包括通过将盖晶片的内凹表面与量规晶片相结合来形成密封空腔,使得来自感测元件的电连接通过通孔出来到盖晶片的外表面。 该方法包括将具有中心孔的间隔晶片附接到基座区域,其中心孔与膜片区域对准。

    MEMS device package with thermally compliant insert
    5.
    发明申请
    MEMS device package with thermally compliant insert 审中-公开
    具有热兼容插件的MEMS器件封装

    公开(公告)号:US20070228499A1

    公开(公告)日:2007-10-04

    申请号:US11544089

    申请日:2006-10-06

    IPC分类号: H01L29/84

    CPC分类号: B81B7/0048 H01L2924/19105

    摘要: A low cost micro-electronic package for MEMS applications includes a package substrate, a MEMS device and a buffer insert which is placed between the MEMS device and the package substrate. The buffer insert has a coefficient of thermal expansion (CTE) which is compatible with the material of the MEMS device and is sufficiently rigid to isolate the MEMS device from thermal, mechanical and other physical stresses applied to the package substrate. In an embodiment, the package is formed as an integrated device which includes both the MEMS device and a signal conditioning integrated circuit, potentially found in the same die. The substrate insert may be made of a material having a CTE value compatible with silicon (Si), such as Kovar, Invar, or an appropriate ceramic material or the like.

    摘要翻译: 用于MEMS应用的低成本微电子封装包括封装衬底,MEMS器件和放置在MEMS器件和封装衬底之间的缓冲插入件。 缓冲插入件具有与MEMS器件的材料相容的热膨胀系数(CTE),并且具有足够的刚性以将MEMS器件与施加到封装衬底的热,机械和其他物理应力隔离。 在一个实施例中,封装被形成为集成器件,其包括MEMS器件和可能在同一管芯中发现的信号调节集成电路。 衬底插入物可以由具有与硅(Si)相容的CTE值的材料制成,例如Kovar,Invar或适当的陶瓷材料等。

    Smart diagnosis and protection circuits for ASIC wiring fault conditions
    6.
    发明授权
    Smart diagnosis and protection circuits for ASIC wiring fault conditions 有权
    智能诊断和保护电路,用于ASIC接线故障条件

    公开(公告)号:US09054517B1

    公开(公告)日:2015-06-09

    申请号:US13829532

    申请日:2013-03-14

    申请人: S3C, Inc.

    发明人: Zhineng Zhu

    IPC分类号: H02H3/00 H02H9/04

    摘要: An application specific integrated circuit (ASIC) is disclosed. The ASIC comprises an internal circuit coupled between a power line and ground and an output buffer coupled to the internal circuit; wherein the output buffer provides an output signal. The ASIC includes a fault detection circuit coupled between the power line and ground; and a first protection block configured to receive a first control signal from the fault detection circuit. The first switch is coupled to the power line, the output buffer and the internal circuit. The first protection block prevents current from flowing between the power line and ground when a fault condition is detected. The ASIC further includes a second protection block configured to receive a second control signal from the fault detection circuit, wherein the second protection block is coupled to the output signal, the power line and ground. The second protection block prevents current from flowing between the power line and ground or the power line and the output line when a fault condition is detected.

    摘要翻译: 公开了专用集成电路(ASIC)。 ASIC包括耦合在电力线和地之间的内部电路和耦合到内部电路的输出缓冲器; 其中所述输出缓冲器提供输出信号。 ASIC包括耦合在电力线和地之间的故障检测电路; 以及被配置为从故障检测电路接收第一控制信号的第一保护块。 第一个开关耦合到电源线,输出缓冲器和内部电路。 当检测到故障条件时,第一个保护块防止电流在电源线和地之间流动。 ASIC还包括被配置为从故障检测电路接收第二控制信号的第二保护块,其中第二保护块耦合到输出信号,电力线和地。 当检测到故障条件时,第二保护模块防止电流在电源线与地之间或电源线和输出线之间流动。

    MEDIA-COMPATIBLE ELECTRICALLY ISOLATED PRESSURE SENSOR FOR HIGH TEMPERATURE APPLICATIONS
    7.
    发明申请
    MEDIA-COMPATIBLE ELECTRICALLY ISOLATED PRESSURE SENSOR FOR HIGH TEMPERATURE APPLICATIONS 有权
    适用于高温应用的媒体兼容电力隔离传感器

    公开(公告)号:US20130137207A1

    公开(公告)日:2013-05-30

    申请号:US13620427

    申请日:2012-09-14

    IPC分类号: B81C1/00

    摘要: A method for manufacturing a Micro-Electro-Mechanical System pressure sensor, including forming a gauge wafer including a diaphragm and a pedestal region. The method includes forming an electrical insulation layer disposed on a second surface of the diaphragm region and forming a plurality of sensing elements patterned on the electrical insulation layer disposed on the second surface in the diaphragm region, forming a cap wafer with a central recess in an inner surface and a plurality of through-wafer embedded vias made of an electrically conductive material in the cap wafer, creating a sealed cavity by coupling the inner recessed surface of the cap wafer to the gauge wafer, such that electrical connections from the sensing elements come out to an outer surface of the cap wafer through the vias, and attaching a spacer wafer with a central aperture to the pedestal region with the central aperture aligned to the diaphragm region.

    摘要翻译: 一种微电子机械系统压力传感器的制造方法,包括形成包括隔膜和基座区域的规格晶片。 所述方法包括形成设置在所述隔膜区域的第二表面上的电绝缘层,并且形成在设置在所述隔膜区域中的所述第二表面上的所述电绝缘层上图案化的多个感测元件,形成具有中心凹部的盖晶片 内表面和在盖晶片中由导电材料制成的多个贯通晶片嵌入的通孔,通过将盖晶片的内凹表面与计量晶片结合而形成密封空腔,使得来自感测元件的电连接到达 通过通孔到盖晶片的外表面,以及将具有中心孔的间隔晶片附接到基座区域,其中心孔与膜片区域对准。

    SUBMERSIBLE ELECTRONIC SENSOR
    8.
    发明申请
    SUBMERSIBLE ELECTRONIC SENSOR 有权
    不可接受的电子传感器

    公开(公告)号:US20130118266A1

    公开(公告)日:2013-05-16

    申请号:US13429253

    申请日:2012-03-23

    申请人: Joe CASTAGNA

    发明人: Joe CASTAGNA

    IPC分类号: G01L9/00

    摘要: The invention provides a submersible, electrically-powered sensor assembly that incorporates a flexible seal assembly having operative and non-operative electrical traces of a uniform vertical height for carrying clamping loads and avoiding signal loss along a signal carrying trace due to compression of the flex seal, minimizing fluid leak paths between two flange surfaces, providing stability in compression, and enabling electrical communication in an environment having an operating fluid.

    摘要翻译: 本发明提供了一种潜水电动传感器组件,其包括柔性密封组件,其具有用于承载夹紧负载的均匀垂直高度的操作和非操作电迹线,并且避免了由于柔性密封件的压缩而沿着信号承载痕迹的信号损失 使两个法兰表面之间的流体泄漏路径最小化,提供压缩稳定性,以及在具有工作流体的环境中实现电通信。

    Media-compatible electrically isolated pressure sensor for high temperature applications
    9.
    发明授权
    Media-compatible electrically isolated pressure sensor for high temperature applications 有权
    介质兼容的电气隔离压力传感器,用于高温应用

    公开(公告)号:US08316533B2

    公开(公告)日:2012-11-27

    申请号:US12855528

    申请日:2010-08-12

    IPC分类号: H05K3/36

    摘要: A method for manufacturing a Micro-Electro-Mechanical System pressure sensor. The method includes forming a gauge wafer including a diaphragm and a pedestal region. The method includes forming an electrical insulation layer disposed on a second surface of the diaphragm region and forming a plurality of sensing elements patterned on the electrical insulation layer disposed on the second surface in the diaphragm region. The method includes forming a cap wafer with a central recess in an inner surface and a plurality of through-wafer embedded vias made of an electrically conductive material in the cap wafer. The method includes creating a sealed cavity by coupling the inner recessed surface of the cap wafer to the gauge wafer, such that electrical connections from the sensing elements come out to an outer surface of the cap wafer through the vias. The method includes attaching a spacer wafer with a central aperture to the pedestal region with the central aperture aligned to the diaphragm region.

    摘要翻译: 一种微机电系统压力传感器的制造方法。 该方法包括形成包括隔膜和基座区域的规格晶片。 该方法包括形成设置在隔膜区域的第二表面上的电绝缘层,并且形成在设置在隔膜区域中的第二表面上的电绝缘层上图案化的多个感测元件。 该方法包括在内表面中形成具有中心凹部的盖晶片和在盖晶片中由导电材料制成的多个通过晶片的嵌入通孔。 该方法包括通过将盖晶片的内凹表面与量规晶片相结合来形成密封空腔,使得来自感测元件的电连接通过通孔出来到盖晶片的外表面。 该方法包括将具有中心孔的间隔晶片附接到基座区域,其中心孔与膜片区域对准。

    Submersible electronic sensor
    10.
    发明授权
    Submersible electronic sensor 有权
    潜水电子传感器

    公开(公告)号:US08887576B2

    公开(公告)日:2014-11-18

    申请号:US13429253

    申请日:2012-03-23

    申请人: Joe Castagna

    发明人: Joe Castagna

    IPC分类号: G01L9/00

    摘要: The invention provides a submersible, electrically-powered sensor assembly that incorporates a flexible seal assembly having operative and non-operative electrical traces of a uniform vertical height for carrying clamping loads and avoiding signal loss along a signal carrying trace due to compression of the flex seal, minimizing fluid leak paths between two flange surfaces, providing stability in compression, and enabling electrical communication in an environment having an operating fluid.

    摘要翻译: 本发明提供了一种潜水电动传感器组件,其包括柔性密封组件,其具有用于承载夹紧负载的均匀垂直高度的操作和非操作电迹线,并且避免了由于柔性密封件的压缩而沿着信号承载痕迹的信号损失 使两个法兰表面之间的流体泄漏路径最小化,提供压缩稳定性,以及在具有工作流体的环境中实现电通信。