-
1.
公开(公告)号:US11901692B2
公开(公告)日:2024-02-13
申请号:US17541933
申请日:2021-12-03
CPC分类号: H01S5/022 , G02B6/13 , H01S5/0202 , H01S5/028
摘要: A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer; and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.
-
公开(公告)号:US20230124445A1
公开(公告)日:2023-04-20
申请号:US17949022
申请日:2022-09-20
IPC分类号: H01L25/16 , H01L25/075 , H01L25/00
摘要: A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.
-
-
公开(公告)号:US20200152615A1
公开(公告)日:2020-05-14
申请号:US16452212
申请日:2019-06-25
IPC分类号: H01L25/16 , H01L25/00 , H01S5/022 , H01S5/10 , H01L25/075 , G02B6/136 , G02B6/12 , G02B6/122
摘要: A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.
-
公开(公告)号:US10330871B2
公开(公告)日:2019-06-25
申请号:US14996001
申请日:2016-01-14
摘要: A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.
-
公开(公告)号:US20190170944A1
公开(公告)日:2019-06-06
申请号:US16171132
申请日:2018-10-25
IPC分类号: G02B6/30
摘要: A device is provided for optical mode spot size conversion to optically couple a semiconductor waveguide with an optical fiber. The device includes a waveguide comprising a waveguide taper region, which comprises a shoulder portion and a ridge portion above the shoulder portion. The ridge portion has a width that tapers to meet a width of the shoulder portion. The waveguide taper region comprises a first material. The device also has a mode converter coupled to the waveguide. The mode converter includes a plurality of stages, and each of the plurality of stages tapers in a direction similar to a direction of taper of the waveguide taper region. The mode converter is made of a second material different from the first material.
-
公开(公告)号:US10200131B2
公开(公告)日:2019-02-05
申请号:US15947555
申请日:2018-04-06
IPC分类号: H04B10/00 , H04B10/556 , H04B10/50 , H04L27/20 , H04J14/02 , H04B10/564 , H04B10/079 , H04J14/00
摘要: A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.
-
公开(公告)号:US09960854B2
公开(公告)日:2018-05-01
申请号:US15274714
申请日:2016-09-23
IPC分类号: H04B10/00 , H04B10/556 , H04L27/20 , H04B10/079 , H04B10/564 , H04J14/02 , H04B10/50 , H04J14/00
CPC分类号: H04B10/5561 , H04B10/07955 , H04B10/5053 , H04B10/564 , H04J14/0227 , H04L27/2096
摘要: A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.
-
公开(公告)号:US09923105B2
公开(公告)日:2018-03-20
申请号:US14509975
申请日:2014-10-08
发明人: Stephen B. Krasulick , John Dallesasse , Amit Mizrahi , Timothy Creazzo , Elton Marchena , John Y. Spann
IPC分类号: H01L31/0232 , H01S5/022 , H01S5/026 , H01S5/30 , H01S5/02
CPC分类号: H01L31/02327 , G02B6/423 , H01S5/0207 , H01S5/021 , H01S5/0217 , H01S5/0218 , H01S5/0224 , H01S5/02248 , H01S5/02252 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/026 , H01S5/3013 , H01S2301/176
摘要: A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon.
-
公开(公告)号:US09917417B2
公开(公告)日:2018-03-13
申请号:US15285042
申请日:2016-10-04
CPC分类号: H01S5/068 , H01S5/021 , H01S5/02284 , H01S5/0268 , H01S5/4012 , H01S5/4087
摘要: A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.
-
-
-
-
-
-
-
-
-