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    Vertical integration of CMOS electronics with photonic devices
    8.
    发明授权
    Vertical integration of CMOS electronics with photonic devices 有权
    CMOS电子学与光子器件的垂直整合

    公开(公告)号：US08859394B2

    公开(公告)日：2014-10-14

    申请号：US13745577

    申请日：2013-01-18

    Applicant: Skorpios Technologies, Inc.

    Inventor： John Dallesasse ,  Stephen B. Krasulick ,  Timothy Creazzo ,  Elton Marchena

    IPC: H01L21/762 ,  H01L27/12 ,  H01L27/146

    CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

    Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

    Abstract translation: 制造复合半导体结构的方法包括提供包括多个硅基器件的SOI衬底，提供包括多个光子器件的化合物半导体衬底，以及切割化合物半导体衬底以提供多个光子管芯。 每个管芯包括多个光子器件中的一个或多个。 该方法还包括提供具有基底层和包括多个CMOS器件的器件层的组装衬底，将多个光子管芯安装在组件衬底的预定部分上，以及对准SOI衬底和组件衬底。 该方法还包括将SOI衬底和组件衬底接合以形成复合衬底结构，并从复合衬底结构去除组装衬底的至少基底层。

    HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION
    9.
    发明申请
    HETEROGENEOUS SUBSTRATE BONDING FOR PHOTONIC INTEGRATION 有权

    公开(公告)号：US20230124445A1

    公开(公告)日：2023-04-20

    申请号：US17949022

    申请日：2022-09-20

    Applicant: Skorpios Technologies., Inc.

    Inventor： Stephen B. Krasulick ,  John Dallesasse

    IPC: H01L25/16 ,  H01L25/075 ,  H01L25/00

    Abstract: A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

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