公开(公告)号：US4969018A

公开(公告)日：1990-11-06

申请号：US626807

申请日：1984-07-02

申请人： Mark A. Reed

发明人： Mark A. Reed

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/06 ,  H01L29/15 ,  H01L29/32 ,  H01L29/66 ,  H01L29/68 ,  H01L29/76 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

CPC分类号： B82Y10/00 ,  H01L29/151 ,  H01L29/158 ,  H01L29/32 ,  H01L29/7606 ,  Y10S977/94

摘要： A new kind of electronic logic circuit, wherein potential wells (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely quantized. This means that, when the bias between the wells is adjusted to align energy levels of the two wells, tunneling will occur very rapidly, whereas when the energy levels are not aligned, tunneling will be greatly reduced. In particular, the wells are optimized to have sharp enough resonant tunneling peaks that the change in potential caused by the difference between the number of carriers stored between two adjacent tunnel wells is itself enough to permit or preclude resonant tunneling. Thus, a tremendous variety of logic functions, including all primitive Boolean functions can be embodied in this logic.

摘要翻译： 一种新型的电子逻辑电路，其中势阱（例如，AlGaAs晶格中的GaAs岛）被制成足够小以使得阱内的载流子的能级离散量化。 这意味着当孔之间的偏压被调整以对准两个井的能量水平时，隧穿将非常迅速地发生，而当能量水平不对准时，隧道效应将大大降低。 特别地，井被优化以具有足够的谐振隧道峰值，由两个相邻隧道井之间存储的载流子之间的差异引起的电位变化本身足以允许或排除谐振隧穿。 因此，包括所有原始布尔函数在内的各种各样的逻辑功能可以体现在这个逻辑中。

公开(公告)号：US5648294A

公开(公告)日：1997-07-15

申请号：US473796

申请日：1995-06-07

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L21/285 ,  H01L21/306 ,  H01L21/331 ,  H01L21/335 ,  H01L21/338 ,  H01L29/737 ,  H01L29/778 ,  H01L29/812 ,  H01L21/20

CPC分类号： H01L29/66863 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/7371 ,  H01L29/7783 ,  H01L29/812 ,  Y10S438/97

摘要： Heterojunction bipolar transistors (130) with bases (138) including an etch stop element are disclosed. The preferred embodiment devices have Al.sub.z Ga.sub.1-z As emitters (140) and GaAs collectors (136) and bases (138) with In.sub.y Ga.sub.1-y As added to the bases (138) to stop chloride plasma etches.

摘要翻译： 公开了具有包括蚀刻停止元件的基底（138）的异质结双极晶体管（130）。 优选实施例的器件具有添加到碱（138）中的In y Ga 1-y As以停止氯化物等离子体蚀刻的Al z Ga 1-z As发射体（140）和GaAs收集器（136）和碱（138）。