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公开(公告)号：US08617982B2
公开(公告)日：2013-12-31
申请号：US13251446
申请日：2011-10-03
申请人： Michal Danek , Juwen Gao , Ronald A. Powell , Aaron R. Fellis
发明人： Michal Danek , Juwen Gao , Ronald A. Powell , Aaron R. Fellis
IPC分类号： H01L21/4763
CPC分类号： H01L21/76876 , H01L21/28562 , H01L21/76885 , H01L21/76895 , H01L23/53261 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Certain embodiments pertain to local interconnects formed by subtractive patterning of blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other deposited metal can be grown to relatively large dimensions, which results in increased electrical conductivity due to, e.g., reduced electron scattering at grain boundaries as electrons travel from one grain to the next during conduction.
摘要翻译： 某些实施例涉及由钨或其它导电材料的覆盖层的消减图案形成的局部互连。 钨或其他沉积金属的晶粒尺寸可以生长到相对较大的尺寸，这导致增加的导电性，这是由于例如当电子在传导期间从一个晶粒移动到下一个晶粒时在晶界处的电子散射减小。
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公开(公告)号：US08119527B1
公开(公告)日：2012-02-21
申请号：US12535464
申请日：2009-08-04
IPC分类号： H01L21/44
CPC分类号： H01L21/32136 , C23C16/045 , C23C16/14 , C23C16/56 , H01L21/67161 , H01L21/68764 , H01L21/68771 , H01L21/76865 , H01L21/76877 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods of filling high aspect ratio features provided on partially manufactured semiconductor substrates with tungsten-containing materials are provided. In certain embodiments, the methods include partial filling a high aspect ratio feature with a layer of tungsten-containing materials and selective removal of the partially filled materials from the feature cavity. Substrates processed using these methods have improved step coverage of the tungsten-containing materials filled into the high aspect ratio features and reduced seam sizes.
摘要翻译： 提供了在部分制造的半导体衬底上用含钨材料填充高纵横比特征的方法。 在某些实施方案中，所述方法包括用含钨材料层部分填充高纵横比特征并从特征腔中选择性地去除部分填充的材料。 使用这些方法处理的基板具有改善填充到高纵横比特征中的含钨材料的步骤覆盖率和减小的接缝尺寸。
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公开(公告)号：US20110159690A1
公开(公告)日：2011-06-30
申请号：US13016656
申请日：2011-01-28
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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公开(公告)号：US08435894B2
公开(公告)日：2013-05-07
申请号：US13351970
申请日：2012-01-17
IPC分类号： H01L21/44
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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公开(公告)号：US20120115329A1
公开(公告)日：2012-05-10
申请号：US13351970
申请日：2012-01-17
IPC分类号： H01L21/768
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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6.发明授权公开(公告)号：US07141494B2
公开(公告)日：2006-11-28
申请号：US10649351
申请日：2003-08-26
申请人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
发明人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , Y10S438/902
摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
摘要翻译： 通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。 该方法的每个循环提供了一个或多个钨膜的单层。 该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。
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公开(公告)号：US09034768B2
公开(公告)日：2015-05-19
申请号：US12833823
申请日：2010-07-09
IPC分类号： H01L21/302 , C23F4/00 , C23C16/04 , C23C16/06 , H01L21/768
CPC分类号： C23F4/00 , C23C16/045 , C23C16/06 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.
摘要翻译： 提供了用含钨材料填充高纵横比特征的方法和装置。 该方法包括提供部分制造的半导体衬底并且在衬底表面上沉积含钨层以部分填充一个或多个高纵横比特征。 该方法继续选择性地去除沉积层的一部分，使得在特征开口附近更多的材料在特征内部被移除。 在某些实施方案中，可以在质量传输限制条件下进行移除，在特征内可用蚀刻剂较少，而不是靠近其开口。 在引入处理室之前和/或在室内时，蚀刻剂物质被激活。 在具体实施方案中，活化物质的重组在去除期间基本上受到限制和/或控制，例如在小于约250℃和/或小于约5托下进行操作。
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公开(公告)号：US08124531B2
公开(公告)日：2012-02-28
申请号：US13016656
申请日：2011-01-28
IPC分类号： H01L21/44
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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公开(公告)号：US20130330926A1
公开(公告)日：2013-12-12
申请号：US13888077
申请日：2013-05-06
IPC分类号： H01L21/48
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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公开(公告)号：US20120080793A1
公开(公告)日：2012-04-05
申请号：US13251446
申请日：2011-10-03
申请人： Michal Danek , Juwen Gao , Ronald A. Powell , Aaron R. Fellis
发明人： Michal Danek , Juwen Gao , Ronald A. Powell , Aaron R. Fellis
IPC分类号： H01L23/48 , H01L21/28 , H01L21/768
CPC分类号： H01L21/76876 , H01L21/28562 , H01L21/76885 , H01L21/76895 , H01L23/53261 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Certain embodiments pertain to local interconnects formed by subtractive patterning of blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other deposited metal can be grown to relatively large dimensions, which results in increased electrical conductivity due to, e.g., reduced electron scattering at grain boundaries as electrons travel from one grain to the next during conduction.
摘要翻译： 某些实施例涉及由钨或其它导电材料的覆盖层的消减图案形成的局部互连。 钨或其他沉积金属的晶粒尺寸可以生长到相对较大的尺寸，这导致增加的导电性，这是由于例如当电子在传导期间从一个晶粒移动到下一个晶粒时在晶界处的电子散射减小。
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