MULTI-WAFER ROTATING DISC REACTOR WITH INERTIAL PLANETARY DRIVE
    2.
    发明申请
    MULTI-WAFER ROTATING DISC REACTOR WITH INERTIAL PLANETARY DRIVE 有权
    多波段旋转盘反应器与惯性行星传动

    公开(公告)号:US20110300297A1

    公开(公告)日:2011-12-08

    申请号:US13153679

    申请日:2011-06-06

    IPC分类号: C23C16/458 B05C13/02

    摘要: Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween.

    摘要翻译: 用于在反应器中移动晶片的晶片载体和方法。 晶片载体可以包括具有多个隔室和多个晶片平台的压板。 压板被构造成围绕第一轴线旋转。 每个晶片平台与隔室中的一个相关联并且被构造成相对于相应的隔室围绕相应的第二轴线旋转。 压板和晶片平台以不同的角速度旋转以在它们之间产生行星运动。 该方法可以包括围绕第一旋转轴旋转压板。 该方法还包括旋转承载在压板上的多个晶片平台中的每一个,并且以相对于第二旋转轴线的速度运送晶片,并以与该压板相对的角速度不同以在其间产生行星运动。

    Multi-wafer rotating disc reactor with inertial planetary drive
    3.
    发明授权
    Multi-wafer rotating disc reactor with inertial planetary drive 有权
    具有惯性行星驱动器的多晶圆旋转盘式反应堆

    公开(公告)号:US09230846B2

    公开(公告)日:2016-01-05

    申请号:US13153679

    申请日:2011-06-06

    摘要: Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween.

    摘要翻译: 用于在反应器中移动晶片的晶片载体和方法。 晶片载体可以包括具有多个隔室和多个晶片平台的压板。 压板被构造成围绕第一轴线旋转。 每个晶片平台与隔室中的一个相关联并且被构造成相对于相应的隔室围绕相应的第二轴线旋转。 压板和晶片平台以不同的角速度旋转以在它们之间产生行星运动。 该方法可以包括围绕第一旋转轴旋转压板。 该方法还包括旋转承载在压板上的多个晶片平台中的每一个,并且以相对于第二旋转轴线的速度运送晶片,并以与该压板相对的角速度不同以在其间产生行星运动。

    APPARATUS AND METHODS FOR MANAGING THE TEMPERATURE OF A SUBSTRATE IN A HIGH VACUUM PROCESSING SYSTEM
    4.
    发明申请
    APPARATUS AND METHODS FOR MANAGING THE TEMPERATURE OF A SUBSTRATE IN A HIGH VACUUM PROCESSING SYSTEM 审中-公开
    用于管理高真空处理系统中的基板的温度的装置和方法

    公开(公告)号:US20070283709A1

    公开(公告)日:2007-12-13

    申请号:US11423361

    申请日:2006-06-09

    IPC分类号: F25B21/02 F25D23/12

    摘要: Apparatus and methods for improving the control of the temperature of a supported member, such as a substrate, in high vacuum processing systems, such as ion beam etch (IBE) systems. The apparatus includes thermoelectric devices that transfer heat from a support member supporting the supported member to a liquid-cooled heat exchange member to regulate the temperature of the support member. The method includes cooling the support member with thermoelectric devices that transfer the heat to the liquid-cooled heat exchange member.

    摘要翻译: 用于改进在诸如离子束蚀刻(IBE)系统的高真空处理系统中的诸如衬底的被支撑构件的温度控制的装置和方法。 该装置包括将热量从支撑支撑部件的支撑部件传递到液体冷却热交换部件以调节支撑部件的温度的热电装置。 该方法包括用将热量转移到液冷的热交换构件的热电装置来冷却支撑构件。