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    SYSTEMS AND METHODS FOR ION BEAM ETCHING
    2.
    发明申请
    SYSTEMS AND METHODS FOR ION BEAM ETCHING 审中-公开

    公开(公告)号：US20170140953A1

    公开(公告)日：2017-05-18

    申请号：US12244683

    申请日：2008-10-02

    申请人： Hari Hegde

    发明人： Hari Hegde

    IPC分类号： H01L21/306 ,  C23F1/08 ,  B44C1/22

    CPC分类号： H01L21/67063 ,  H01J27/18 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/3151

    摘要： An ion system for use in an etching system for etching at least a wafer using a gas. The ion system may include an ion chamber for containing charged particles generated from the gas. The ion system may also include a magnetic device surrounding at least a portion of the ion chamber. The magnetic device may affect the distribution of the charged particles in the ion chamber. The ion system may also include a grid assembly disposed between the ion chamber and the wafer when the wafer is etched. The charged particles may be provided through the grid assembly to etch the wafer when the wafer is etched.

    DEPOSITION SYSTEMS AND METHODS
    3.
    发明申请
    DEPOSITION SYSTEMS AND METHODS 审中-公开
    沉积系统和方法

    公开(公告)号：US20100096254A1

    公开(公告)日：2010-04-22

    申请号：US12571160

    申请日：2009-09-30

    申请人： Hari Hegde

    发明人： Hari Hegde

    IPC分类号： C23C14/35

    CPC分类号： C23C14/46 ,  C23C14/35 ,  H01J37/3402 ,  H01J37/3452

    摘要： A system for depositing material on a substrate using plasma and a target. The target may include the material and/or a second material. The system may include a plasma source for providing the plasma. The system may also include a chamber for containing the substrate, the plasma, and the target during deposition of the material on the substrate. The system may also include a first magnet disposed above the chamber or disposed below the chamber for influencing distribution of the plasma inside the chamber. At least one of a bottom surface of the magnet and a top surface of the magnet is at an angle with respect to an imaginary axis of the plasma source. A circular cross section of the plasma source is symmetrical with respect to the imaginary axis of the plasma source. The angle is greater than 0 degree and less than 90 degrees.

    摘要翻译： 一种用于使用等离子体和靶材在衬底上沉积材料的系统。 靶材可以包括材料和/或第二材料。 该系统可以包括用于提供等离子体的等离子体源。 该系统还可以包括用于在材料沉积在衬底上时容纳衬底，等离子体和靶的腔室。 该系统还可以包括设置在室上方或设置在室下方的第一磁体，用于影响室内的等离子体的分布。 磁体的底表面和磁体的顶表面中的至少一个相对于等离子体源的虚轴具有一定角度。 等离子体源的圆形横截面相对于等离子体源的假想轴对称。 角度大于0度且小于90度。

    Grid assemblies for use in ion beam etching systems and methods of utilizing the grid assemblies
    5.
    发明授权
    Grid assemblies for use in ion beam etching systems and methods of utilizing the grid assemblies 有权
    用于离子束蚀刻系统的栅格组件和利用栅格组件的方法

    公开(公告)号：US08703001B1

    公开(公告)日：2014-04-22

    申请号：US12244681

    申请日：2008-10-02

    申请人： Hari Hegde

    发明人： Hari Hegde

    IPC分类号： G01L21/30 ,  G01R31/00 ,  B44C1/22

    CPC分类号： H01J27/024 ,  H01J37/08 ,  H01J37/3053 ,  H01J37/32422 ,  H01J2237/03 ,  H01J2237/334

    摘要： A grid assembly for use in an etching system for etching at least a wafer. The grid assembly may include a first grid member, a second grid member, and a third grid member. When the grid assembly is used in etching the wafer, the first grid member may be electrically grounded, the second grid member may be electrically negative relative to the first grid member, and the third grid member may be electrically positive relative to the first grid member. The second grid member may be disposed between the first grid member and the third grid member. The first grid member may be thicker than at least one of the second grid member and the third grid member.

    摘要翻译： 一种用于蚀刻系统中的栅格组件，用于至少蚀刻晶片。 栅格组件可以包括第一栅格部件，第二栅极部件和第三栅极部件。 当栅极组件用于蚀刻晶片时，第一栅极元件可以电接地，第二栅极元件可相对于第一栅极元件电气负极，并且第三栅极元件可相对于第一栅极元件 。 第二格栅构件可以设置在第一格栅构件和第三格栅构件之间。 第一格栅构件可以比第二格栅构件和第三格栅构件中的至少一个更厚。