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8 条记录 (耗时 0.017 秒)

    Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
    3.
    发明授权
    Method for forming a lightly-doped drain (LDD) structure in a semiconductor device 失效
    在半导体器件中形成轻掺杂漏极（LDD）结构的方法

    公开(公告)号：US4994404A

    公开(公告)日：1991-02-19

    申请号：US399670

    申请日：1989-08-28

    申请人： David Y. Sheng ,  Yasunobu Kosa ,  Andrew J. Urquhart ,  Mark J. Cullen

    发明人： David Y. Sheng ,  Yasunobu Kosa ,  Andrew J. Urquhart ,  Mark J. Cullen

    IPC分类号： H01L21/336

    CPC分类号： H01L29/6659 ,  Y10S438/945

    摘要： A process is disclosed for the formation of an LDD structure in an MOS transistor having a reduced mask count and providing high integrity source/drain junctions. In accordance with one embodiment of the invention an MOS transistor is formed having a gate dielectric overlying an active region of the substrate. A transistor gate is formed in a central portion of the active region and an oxidation layer is formed over the active region and the transistor gate. A lightly-doped source/drain region is formed which is self aligned to the transistor gate. A conformal layer of an oxygen reactive material is formed overlying the transistor gate and the active region. The oxygen reactive material is anisotropically etched in a oxygen plasma reactive ion etch to form a sidewall spacer on the edge the transistor gate. The oxygen reactive ion etch does not penetrate the oxidation layer overlying the active region. A heavily-doped source/drain region is formed which is self aligned to the edge of the sidewall spacer. The sidewall spacer is then removed completing the LDD structure.

    摘要翻译： 公开了一种用于在具有减小的掩模计数并提供高完整性源极/漏极结的MOS晶体管中形成LDD结构的工艺。 根据本发明的一个实施例，形成具有覆盖在衬底的有源区上的栅极电介质的MOS晶体管。 晶体管栅极形成在有源区的中心部分，氧化层形成在有源区和晶体管栅上。 形成与晶体管栅极自对准的轻掺杂源/漏区。 在晶体管栅极和有源区上形成氧反应性材料的共形层。 氧反应性材料在氧等离子体反应离子蚀刻中各向异性蚀刻以在晶体管栅极的边缘上形成侧壁间隔物。 氧反应离子蚀刻不穿透覆盖有源区的氧化层。 形成重掺杂源极/漏极区域，其与侧壁间隔物的边缘自对准。 然后去除侧壁间隔物，完成LDD结构。

    Method of growth-orientation of a crystal on a device using an oriented seed layer
    8.
    发明授权
    Method of growth-orientation of a crystal on a device using an oriented seed layer 失效
    使用定向种子层的器件上的晶体的生长取向的方法

    公开(公告)号：US5264070A

    公开(公告)日：1993-11-23

    申请号：US594498

    申请日：1990-10-09

    申请人： Andrew J. Urquhart ,  Ronald E. Pyle ,  Chi-Ming Hong

    发明人： Andrew J. Urquhart ,  Ronald E. Pyle ,  Chi-Ming Hong

    IPC分类号： C30B25/18 ,  H01L21/20 ,  C30B25/00

    CPC分类号： C30B25/18 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02639

    摘要： Growth-orientation of a crystal on a semiconductor device is achieved by using an oriented seed layer to grow a monocrystalline layer of silicon on an oxide. The oriented seed layer is provided by a regimented layer of silicon precipitates, which are deposited onto a surface of the oxide in a conventional aluminum-silicon deposition process. A film of silicon is deposited onto the oriented seed layer to grow a monocrystalline layer of silicon. The monocrystalline layer of silicon is further coated with an oxide, and a further seed layer is deposited. In this manner, a plurality of monocrystalline layers of silicon can be deposited on and between insulating layers of oxide. The method can be used for the manufacture of silicon-on-oxide transistors, having a low density of crystalline defects.

    摘要翻译： 半导体器件上的晶体的生长取向通过使用定向种子层在氧化物上生长单晶硅层来实现。 取向种子层由硅沉淀物的沉积层提供，其沉积在常规铝硅沉积工艺中的氧化物的表面上。 将硅膜沉积到取向的种子层上以生长硅的单晶层。 硅的单晶层进一步涂覆有氧化物，并沉积另外的种子层。 以这种方式，多个单晶硅层可以沉积在氧化物的绝缘层之间和之间。 该方法可用于制造具有低密度晶体缺陷的硅 - 氧化物晶体管。