公开(公告)号：US20080277730A1

公开(公告)日：2008-11-13

申请号：US11745044

申请日：2007-05-07

申请人： Manoj Mehrotra ,  Antonio L.P Rotondaro ,  Puneet Kohli

发明人： Manoj Mehrotra ,  Antonio L.P Rotondaro ,  Puneet Kohli

IPC分类号： H01L21/44 ,  H01L29/76

CPC分类号： H01L21/76832 ,  H01L21/76825 ,  H01L21/76828 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： There is presented a method of forming a semiconductor device. The method comprises forming gate structures including forming gate electrodes over a semiconductor substrate and forming spacers adjacent the gate electrodes. Source/drains are formed adjacent the gate structures, and a laminated stress layer is formed over the gate structure and the semiconductor substrate. The formation of the laminated stress layer includes cycling a deposition process to form a first stress layer over the gate structures and the semiconductor substrate and at least a second stress layer over the first stress layer. After the laminated layer is formed, it is subjected to an anneal process conducted at a temperature of about 900° C. or greater.

摘要翻译： 提出了形成半导体器件的方法。 该方法包括形成栅极结构，包括在半导体衬底上形成栅电极并在栅电极附近形成间隔物。 在栅极结构附近形成源极/漏极，并且在栅极结构和半导体衬底上形成层压应力层。 层压应力层的形成包括循环沉积工艺以在栅极结构和半导体衬底之上形成第一应力层，并且在第一应力层上形成至少第二应力层。 在层压层形成之后，进行在约900℃以上的温度下进行的退火处理。

公开(公告)号：US20100237442A1

公开(公告)日：2010-09-23

申请号：US12407007

申请日：2009-03-19

申请人： ZHENGWEN LI ,  ANTONIO L.P. ROTONDARO ,  MARK R. VISOKAY

发明人： ZHENGWEN LI ,  ANTONIO L.P. ROTONDARO ,  MARK R. VISOKAY

IPC分类号： H01L29/78 ,  H01L21/31

CPC分类号： H01L29/517 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/76224 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/518

摘要： A shallow trench isolation structure is formed in a semiconductor substrate adjacent to an active semiconductor region. A selective self-assembling oxygen barrier layer is formed on the surface of the shallow trench isolation structure that includes a dielectric oxide material. The formation of the selective self-assembling oxygen barrier layer is selective in that it is not formed on the surface the active semiconductor region having a semiconductor surface. The selective self-assembling oxygen barrier layer is a self-assembled monomer layer of a chemical which is a derivative of alkylsilanes including at least one alkylene moiety. The silicon containing portion of the chemical forms polysiloxane, which is bonded to surface silanol groups via Si—O—Si bonds. The monolayer of the chemical is the selective self-assembling oxygen barrier layer that prevents diffusion of oxygen to a high dielectric constant material layer that is subsequently deposited as a gate dielectric.

摘要翻译： 在与有源半导体区域相邻的半导体衬底中形成浅沟槽隔离结构。 在包括电介质氧化物材料的浅沟槽隔离结构的表面上形成选择性自组装氧阻挡层。 选择性自组装氧阻挡层的形成是选择性的，因为它不在具有半导体表面的有源半导体区域的表面上形成。 选择性自组装氧阻挡层是化学品的自组装单体层，其是包括至少一个亚烷基部分的烷基硅烷的衍生物。 化学式的含硅部分形成聚硅氧烷，其通过Si-O-Si键与表面硅烷醇基团键合。 化学品的单层是选择性自组装氧阻挡层，其防止氧扩散到随后沉积为栅极电介质的高介电常数材料层。

公开(公告)号：US20090227117A1

公开(公告)日：2009-09-10

申请号：US12421036

申请日：2009-04-09

申请人： Antonio L.P. Rotondaro ,  Luigi Colombo ,  Mark R. Visokay ,  Rajesh Khamankar ,  Douglas E. Mercer

发明人： Antonio L.P. Rotondaro ,  Luigi Colombo ,  Mark R. Visokay ,  Rajesh Khamankar ,  Douglas E. Mercer

IPC分类号： H01L21/31

CPC分类号： H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/517 ,  H01L29/518

摘要： A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.

摘要翻译： 一种MOSFET结构，包括在栅极材料沉积之前具有栅极电介质的氮化处理的硅酸盐栅极电介质。