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    PIEZOELECTRIC CERAMIC COMPOSITION
    2.
    发明申请
    PIEZOELECTRIC CERAMIC COMPOSITION 有权
    压电陶瓷组合物

    公开(公告)号：US20150099085A1

    公开(公告)日：2015-04-09

    申请号：US14123780

    申请日：2012-06-26

    申请人： Kenji Nagareda ,  Atsuhiro Hayashi

    发明人： Kenji Nagareda ,  Atsuhiro Hayashi

    IPC分类号： H01L41/187

    CPC分类号： H01L41/1873 ,  C04B35/495 ,  C04B35/6261 ,  C04B35/62695 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3255 ,  C04B2235/3272 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/40 ,  C04B2235/405 ,  H01L41/0805 ,  H01L41/1878 ,  Y10T29/42 ,  Y10T428/21

    摘要： This invention provides for a piezoelectric ceramic composition having a lead-free alkaline niobate piezoelectric ceramic composition with a favorable piezoelectric property. This invention refers to a piezoelectric ceramic composition 10 that is described as composition formula {Lix(K1-yNay)1-x}(Nb1-zSbz)O3 including the additives of the metallic elements Bi and Fe within the range of the following relational expressions: 0.03≦x≦0.045; 0.5≦y≦0.58; 0.03≦z≦0.045; and 0.006≦v≦w≦0.010 whereof v is the additive amount of Bi (molar ratio), and w is the additive amount of Fe (molar ratio).

    摘要翻译： 本发明提供一种具有良好压电性能的无铅碱铌酸盐压电陶瓷组合物的压电陶瓷组合物。 本发明涉及一种压电陶瓷组合物10，其被描述为组成式{Lix（K1-yNay）1-x}（Nb1-zSbz）O3），其包括在以下关系式的范围内的金属元​​素Bi和Fe的添加剂 ：0.03＆nlE; x＆nlE; 0.045; 0.5＆nlE; y＆nlE; 0.58; 0.03＆nlE; z＆nlE; 0.045; 和0.006＆nlE; v＆nlE; w＆nlE; 0.010其中v是Bi的添加量（摩尔比），w是Fe的添加量（摩尔比）。

    ELECTROMECHANICAL TRANSFORMATION DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    ELECTROMECHANICAL TRANSFORMATION DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    电动转换装置及其制造方法

    公开(公告)号：US20150042210A1

    公开(公告)日：2015-02-12

    申请号：US14114273

    申请日：2012-06-26

    申请人： Kenji Nagareda ,  Yukai Murai ,  Atsuhiro Hayashi ,  Yuichi Maida

    发明人： Kenji Nagareda ,  Yukai Murai ,  Atsuhiro Hayashi ,  Yuichi Maida

    IPC分类号： B06B1/06 ,  H01L41/187 ,  H01L41/29 ,  H01L41/09

    CPC分类号： G01F1/662 ,  B06B1/0644 ,  B06B1/0651 ,  B06B1/067 ,  G01F1/667 ,  H01L41/0825 ,  H01L41/083 ,  H01L41/09 ,  H01L41/1132 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/29 ,  H01L41/313 ,  Y10T29/42

    摘要： An electromechanical transformation device comprises an alkaline niobate piezoelectric ceramic composition and a rigid body adhered onto the major surface of the piezoelectric ceramic composition. The piezoelectric ceramic composition is made of crystal structures such as orthorhombic crystals formed at the side where the temperature is lower than the orthorhombic-to-tetragonal phase transition temperature, tetragonal crystals formed at the side where the temperature is higher than the orthorhombic-to-tetragonal phase transition temperature as well as at the side where the temperature is lower than the tetragonal-to-cubic phase transition temperature, and the cubic crystals formed at the side where the temperature is higher than the tetragonal-to-cubic phase transition temperature. Young's modulus of the rigid body is 60 GPa or more and the volume percent of the piezoelectric ceramic composition existing within a range where the distance from the adhesion point of the piezoelectric ceramic composition and the rigid body is 40% or more.

    摘要翻译： 机电转化装置包括碱性铌酸盐压电陶瓷组合物和粘附在压电陶瓷组合物的主表面上的刚体。 该压电陶瓷组合物由温度低于正交相对转变温度的一侧形成的正交晶体等晶体结构构成，在该温度高于斜方晶相的一侧形成四方晶， 四方相转变温度以及温度低于四方相立方相转变温度的一侧，以及形成于温度高于四方相立方相转变温度的一侧的立方晶体。 刚性体的杨氏模量为60GPa以上，压电陶瓷组合物的体积百分比存在于压电陶瓷组合物和刚性体的粘合点的距离为40％以上的范围内。

    Semiconductor integrated circuit device
    5.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US07323901B2

    公开(公告)日：2008-01-29

    申请号：US11375109

    申请日：2006-03-15

    申请人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

    发明人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

    IPC分类号： H03K19/003

    CPC分类号： H04L25/0278 ,  H03H11/30

    摘要： A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

    摘要翻译： 提供多组电路，每组电路通过与连接到外部端子的电阻元件相关联地使用阻抗控制电路产生阻抗代码，并且每个电路根据这种阻抗代码改变阻抗 。 阻抗控制电路包括阻抗比较器，该阻抗比较器等效于电阻元件和多组电路，并且与多个复制电路中的每一个执行阻抗比较，以形成增加阻抗的向上信号和向下 信号降低阻抗。 提供与多组电路的个体相邻的计数器，从而响应于上升信号和下降信号而产生阻抗代码。

    Semiconductor integrated circuit device
    8.
    发明申请
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US20060158216A1

    公开(公告)日：2006-07-20

    申请号：US11375109

    申请日：2006-03-15

    申请人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

    发明人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

    IPC分类号： H03K19/003

    CPC分类号： H04L25/0278 ,  H03H11/30

    摘要： A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

    摘要翻译： 提供多组电路，每组电路通过与连接到外部端子的电阻元件相关联地使用阻抗控制电路产生阻抗代码，并且每个电路根据这种阻抗代码改变阻抗 。 阻抗控制电路包括阻抗比较器，该阻抗比较器等效于电阻元件和多组电路，并且与多个复制电路中的每一个执行阻抗比较，以形成增加阻抗的向上信号和向下 信号降低阻抗。 提供与多组电路的个体相邻的计数器，从而响应于上升信号和下降信号而产生阻抗代码。

    Semiconductor integrated circuit device
    9.
    发明授权
    Semiconductor integrated circuit device 失效

    公开(公告)号：US07038486B2

    公开(公告)日：2006-05-02

    申请号：US10889037

    申请日：2004-07-13

    申请人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

    发明人： Satoshi Aoyama ,  Atsuhiro Hayashi ,  Yasuhiko Takahashi

    IPC分类号： H03K19/003

    CPC分类号： H04L25/0278 ,  H03H11/30

    摘要： A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

    Semiconductor integrated circuit controlling output impedance and slew rate
    10.
    发明授权
    Semiconductor integrated circuit controlling output impedance and slew rate 有权
    半导体集成电路控制输出阻抗和转换速率

    公开(公告)号：US07443212B2

    公开(公告)日：2008-10-28

    申请号：US11889098

    申请日：2007-08-09

    申请人： Atsuhiro Hayashi ,  Takemi Negishi ,  Hiroshi Toyoshima

    发明人： Atsuhiro Hayashi ,  Takemi Negishi ,  Hiroshi Toyoshima

    IPC分类号： H03B1/00 ,  H03K19/0175

    CPC分类号： H03K19/018557 ,  H03K17/163 ,  H03K17/164 ,  H03K19/0005 ,  H03K19/00384 ,  H03K19/018585

    摘要： The present invention provides a semiconductor integrated circuit that can perform impedance control and slew rate control independently of each other and simplify the structure of a control circuit. An output circuit comprising plural output MOSFETs connected in parallel is used, from among the plural output MOSFETs, the number of output MOSFETS to be turned on is selected by a first control means to control output impedance, and slew rate is controlled by a second control means controlling a drive signal of the output MOSFETs to be turned on.

    摘要翻译： 本发明提供一种半导体集成电路，其可以彼此独立地执行阻抗控制和压摆率控制，并且简化控制电路的结构。 使用包括并联连接的多个输出MOSFET的输出电路，从多个输出MOSFET中，由第一控制装置选择要导通的输出MOSFETS的数量来控制输出阻抗，并且通过第二控制来控制压摆率 意味着控制要导通的输出MOSFET的驱动信号。