Power supply voltage monitoring circuit and electronic circuit including the power supply voltage monitoring circuit
    2.
    发明授权
    Power supply voltage monitoring circuit and electronic circuit including the power supply voltage monitoring circuit 有权
    电源电压监控电路和电子电路包括电源电压监控电路

    公开(公告)号:US08604821B2

    公开(公告)日:2013-12-10

    申请号:US12686684

    申请日:2010-01-13

    IPC分类号: G01R31/40

    CPC分类号: H03K19/0008

    摘要: Provided is a power supply voltage monitoring circuit (50) including: a signal output circuit (1) for outputting a signal voltage (Vsignal) which exhibits a saturation characteristic with respect to an increase in a power supply voltage (VDD); and a signal voltage monitoring circuit (4) for comparing the power supply voltage (VDD) with the signal voltage (Vsignal), and outputting a signal (Vout) indicating that the signal voltage (Vsignal) is normal when there is a predetermined voltage difference. With this configuration, a minimum operating power supply voltage may be reduced in an electronic circuit, and the power supply voltage may be used with efficiency.

    摘要翻译: 提供一种电源电压监视电路(50),包括:信号输出电路(1),用于输出相对于电源电压(VDD)增加而呈现饱和特性的信号电压(Vsignal); 以及用于将电源电压(VDD)与信号电压(Vsignal)进行比较的信号电压监视电路(4),并且当存在预定的电压差时,输出指示信号电压(Vsignal)为正常的信号(Vout) 。 利用这种配置,可以在电子电路中降低最小工作电源电压,并且可以有效地使用电源电压。

    Temperature sensor device
    3.
    发明授权
    Temperature sensor device 有权
    温度传感器装置

    公开(公告)号:US08547163B2

    公开(公告)日:2013-10-01

    申请号:US13345064

    申请日:2012-01-06

    IPC分类号: H01L35/00

    CPC分类号: G01K7/01

    摘要: Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit.

    摘要翻译: 提供了可在较低电压下操作的温度传感器装置。 温度传感器装置基于用于产生PN结的正向电压的正向电压发生器的输出电压来检测温度。 正向电压发生器包括电平转换电压产生电路,并且基于PN结的正向电压和电平转换电压产生电路的电压来给出温度传感器装置的输出电压。

    Temperature detection device
    4.
    发明授权
    Temperature detection device 有权
    温度检测装置

    公开(公告)号:US08531234B2

    公开(公告)日:2013-09-10

    申请号:US13236043

    申请日:2011-09-19

    IPC分类号: H03K17/78

    CPC分类号: G01K7/01 G01K7/32 G01K2215/00

    摘要: Provided is a temperature detection device capable of attaining low current consumption at no expense of detection speed at around a temperature to be detected. The temperature detection device includes a control circuit for outputting a control signal for controlling ON/OFF of such internal circuits as a reference voltage circuit and a comparator. In the control circuit, in order to increase the detection speed at around the temperature to be detected, an oscillation frequency of an oscillation circuit has positive temperature characteristics. Further, the control circuit includes a waveform shaping circuit so as to optimize the waveform of the control signal for controlling ON of the internal circuits, to thereby attain low current consumption.

    摘要翻译: 提供一种温度检测装置,其能够在大约待检测温度的情况下以不牺牲检测速度获得低电流消耗。 温度检测装置包括用于输出用于控制诸如参考电压电路和比较器的内部电路的ON / OFF的控制信号的控制电路。 在控制电路中,为了提高检测温度附近的检测速度,振荡电路的振荡频率具有正温度特性。 此外,控制电路包括波形整形电路,以优化用于控制内部电路的接通的控制信号的波形,从而实现低电流消耗。

    Overheat protection circuit and power supply integrated circuit
    5.
    发明授权
    Overheat protection circuit and power supply integrated circuit 有权
    过热保护电路和电源集成电路

    公开(公告)号:US08451571B2

    公开(公告)日:2013-05-28

    申请号:US12790070

    申请日:2010-05-28

    IPC分类号: H02H3/00

    CPC分类号: G05F1/569

    摘要: Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.

    摘要翻译: 提供了一种具有高检测精度的过热保护电路的电源集成电路。 过热保护电路包括:电流产生电路,包括:第一金属氧化物半导体(MOS)晶体管,其包括彼此连接的栅极端子和漏极端子,所述第一MOS晶体管在弱反转区域中工作; 第二MOS晶体管,包括连接到第一MOS晶体管的栅极端子的栅极端子,第二MOS晶体管具有与第一MOS晶体管相同的导电类型并且在弱反转区域中操作; 以及连接到所述第二MOS晶体管的源极端子的第一电阻元件; 以及比较器,用于比较具有正温度特性的参考电压和具有负温度特性的温度电压,其基于由电流产生电路产生的电流获得。

    VOLTAGE DETECTION CIRCUIT
    7.
    发明申请
    VOLTAGE DETECTION CIRCUIT 审中-公开
    电压检测电路

    公开(公告)号:US20100176874A1

    公开(公告)日:2010-07-15

    申请号:US12686640

    申请日:2010-01-13

    IPC分类号: G05F1/10

    摘要: Provided is a voltage detection circuit having a small circuit scale. A P-type metal oxide semiconductor (PMOS) transistor (11) has an absolute value (Vtp) of its threshold voltage, which is equal to a minimum operating voltage. If a power supply voltage (VDD) becomes higher than the minimum operating voltage, the PMOS transistor (11) is turned ON to allow a current to flow therethrough. As a result, based on the current, an output voltage (Vout) is generated across a capacitor (15).

    摘要翻译: 提供具有小电路规模的电压检测电路。 P型金属氧化物半导体(PMOS)晶体管(11)的阈值电压的绝对值(Vtp)等于最小工作电压。 如果电源电压(VDD)变得高于最小工作电压,则PMOS晶体管(11)导通以允许电流流过。 结果,基于电流,跨越电容器(15)产生输出电压(Vout)。

    Temperature detection circuit
    8.
    发明申请
    Temperature detection circuit 有权
    温度检测电路

    公开(公告)号:US20100156507A1

    公开(公告)日:2010-06-24

    申请号:US12653536

    申请日:2009-12-15

    IPC分类号: G01K7/00

    CPC分类号: G01K7/01 G01K3/005

    摘要: Provided is a temperature detection circuit capable of preventing malfunction, which may occur when power is turned on. A switch circuit for giving such a potential that a comparator detects a low temperature is provided at an output terminal of a temperature sensor circuit. A switch circuit for giving such a potential that the comparator detects a low temperature is provided at an output terminal of a reference voltage circuit. When the power is turned on, each of the switch circuits is set by a switch control circuit such that the comparator detects a low temperature.

    摘要翻译: 提供了能够防止在接通电源时可能发生的故障的温度检测电路。 在温度传感器电路的输出端设置有用于给出比较器检测到低温的电位的开关电路。 在基准电压电路的输出端提供用于给出比较器检测到低温的电位的开关电路。 当电源接通时,每个开关电路由开关控制电路设置,使得比较器检测到低温。

    TEST MODE SETTING CIRCUIT
    10.
    发明申请
    TEST MODE SETTING CIRCUIT 审中-公开
    测试模式设置电路

    公开(公告)号:US20120131402A1

    公开(公告)日:2012-05-24

    申请号:US13289548

    申请日:2011-11-04

    IPC分类号: G06F11/267

    CPC分类号: G01R31/31701

    摘要: Provided is a test mode setting circuit with a smaller number of terminals. A detector having a low threshold voltage and a detector having a high threshold voltage are provided to a test terminal for controlling a test mode of a semiconductor device, and the detector having the low threshold voltage releases a reset of a logic circuit while the detector having the high threshold voltage controls switching of the test mode. This configuration uses the test terminal, a reset terminal, and test mode control terminals in common between a normal state and a test state, thus reducing a large number of the terminals.

    摘要翻译: 提供了具有较少数量的终端的测试模式设置电路。 具有低阈值电压的检测器和具有高阈值电压的检测器被提供给用于控制半导体器件的测试模式的测试端子,并且具有低阈值电压的检测器释放逻辑电路的复位,同时检测器具有 高阈值电压控制测试模式的切换。 该配置在正常状态和测试状态之间使用测试终端,复位终端和测试模式控制终端,从而减少了大量的终端。