公开(公告)号：US20130220806A1

公开(公告)日：2013-08-29

申请号：US13883539

申请日：2011-11-02

申请人： Toru Iwaya ,  Hirobumi Muto ,  Hisayuki Takasu ,  Atsushi Kamino ,  Asako Kaneko

发明人： Toru Iwaya ,  Hirobumi Muto ,  Hisayuki Takasu ,  Atsushi Kamino ,  Asako Kaneko

IPC分类号： H01J37/20 ,  H01J37/30 ,  H01J37/305

CPC分类号： H01J37/3053 ,  H01J37/20 ,  H01J37/3005 ,  H01J37/3007 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/26

摘要： An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

摘要翻译： 本发明的离子铣削装置设置有倾斜台（8），其设置在真空室（15）中并具有平行于与离子束正交的第一轴线的倾斜轴线，驱动机构（9,51 ），其具有旋转轴线和平行于与所述第一轴线正交的第二轴线的倾斜轴线，并且使样本（3）旋转或倾斜;以及切换单元，其能够在所述样本之间切换所述离子束的状态 在倾斜台倾斜时旋转或摆动，并且在倾斜台进入直到状态并且样品摆动的同时施加离子束的状态。 因此，实现了能够在相同的真空室中对样品进行横截面加工和平坦处理的离子铣削装置。

公开(公告)号：US09355817B2

公开(公告)日：2016-05-31

申请号：US13988506

申请日：2011-11-21

申请人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

发明人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

IPC分类号： C23C14/34 ,  H01J37/305 ,  H01J37/20

CPC分类号： H01J37/3053 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/20207 ,  H01J2237/2802 ,  H01J2237/31745

摘要： The sample 3 is tilted/oscillated with respect to the optical axis (Z-axis) of the ion beam 2 to repeat tilt and tilt/restoration of a processing target surface 3a of the sample 3 between a surface state in which the processing target surface 3a of the sample 3 faces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surface 3a on the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surface 3 on the mask side, so that the processing target surface 3a is irradiated with the ion beam 2 at a low angle, and projections/recesses 63 derived from a void 61 or a dissimilar material 62 are suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.

摘要翻译： 样品3相对于离子束2的光轴（Z轴）倾斜/振荡，以在样品3的处理目标表面3a之间重叠倾斜和倾斜/恢复处理目标表面 样品3的3a面向倾斜轴方向（Y轴方向）和倾斜表面状态，其中样品台侧的处理对象表面3a的一部分在倾斜轴线方向（Y轴方向）上突出于倾斜轴方向 处理对象面3的掩模侧的一部分，使得处理对象面3a以低角度照射离子束2，抑制从空隙61或异种材料62得到的突起/凹部63。 因此，在横截面试样的制造中，可以抑制从空隙或异种材料得到的突起/凹部的产生，从而制造适于观察/分析的试样截面。

公开(公告)号：US08552407B2

公开(公告)日：2013-10-08

申请号：US13386980

申请日：2010-07-14

申请人： Asako Kaneko ,  Hirobumi Muto ,  Atsushi Kamino

发明人： Asako Kaneko ,  Hirobumi Muto ,  Atsushi Kamino

IPC分类号： G01N1/32

CPC分类号： H01J37/09 ,  G01N1/286 ,  H01J37/20 ,  H01J37/305 ,  H01J37/31

摘要： Disclosed is a shield (8, 10) disposed between an ion source (1) of an ion milling device and a sample (7) so as to be in contact with the sample. The shield is characterized by having a circular shape having an opening at the center, and by being capable of rotating about an axis (11) extending through the opening. Further, a groove is provided in the ion source-side surface of an end portion of the shield, and an inclined surface is provided on an end portion of the shield. Thus, an ion milling device having a shield, wherein the maximum number of machining operations can be increased, and the position of the shield can be accurately adjusted.

摘要翻译： 公开了设置在离子铣削装置的离子源（1）和样品（7）之间以与样品接触的屏蔽（8,10）。 该屏蔽的特征在于具有在中心具有开口的圆形形状，并且能够绕延伸穿过开口的轴线（11）旋转。 此外，在屏蔽的端部的离子源侧表面设置有槽，并且在屏蔽的端部设置有倾斜面。 因此，具有屏蔽件的离子铣削装置，其中可以增加最大数量的加工操作，并且可以精确地调节护罩的位置。

公开(公告)号：US20120126146A1

公开(公告)日：2012-05-24

申请号：US13386980

申请日：2010-07-14

申请人： Asako Kaneko ,  Hirobumi Muto ,  Atsushi Kamino

发明人： Asako Kaneko ,  Hirobumi Muto ,  Atsushi Kamino

IPC分类号： G21K5/00 ,  G21F3/00

CPC分类号： H01J37/09 ,  G01N1/286 ,  H01J37/20 ,  H01J37/305 ,  H01J37/31

摘要： Disclosed is a shield (8, 10) disposed between an ion source (1) of an ion milling device and a sample (7) so as to be in contact with the sample. The shield is characterized by having a circular shape having an opening at the center, and by being capable of rotating about an axis (11) extending through the opening. Further, a groove is provided in the ion source-side surface of an end portion of the shield, and an inclined surface is provided on an end portion of the shield. Thus, an ion milling device having a shield, wherein the maximum number of machining operations can be increased, and the position of the shield can be accurately adjusted.

摘要翻译： 公开了设置在离子铣削装置的离子源（1）和样品（7）之间以与样品接触的屏蔽（8,10）。 该屏蔽的特征在于具有在中心具有开口的圆形形状，并且能够绕延伸穿过开口的轴线（11）旋转。 此外，在屏蔽的端部的离子源侧表面设置有槽，并且在屏蔽的端部设置有倾斜面。 因此，具有屏蔽件的离子铣削装置，其中可以增加最大数量的加工操作，并且可以精确地调节护罩的位置。

公开(公告)号：US20130240353A1

公开(公告)日：2013-09-19

申请号：US13988506

申请日：2011-11-21

申请人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

发明人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

IPC分类号： H01J37/305

CPC分类号： H01J37/3053 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/20207 ,  H01J2237/2802 ,  H01J2237/31745

摘要： The sample 3 is tilted/oscillated with respect to the optical axis (Z-axis) of the ion beam 2 to repeat tilt and tilt/restoration of a processing target surface 3a of the sample 3 between a surface state in which the processing target surface 3a of the sample 3 faces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surface 3a on the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surface 3 on the mask side, so that the processing target surface 3a is irradiated with the ion beam 2 at a low angle, and projections/recesses 63 derived from a void 61 or a dissimilar material 62 are suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.

摘要翻译： 样品3相对于离子束2的光轴（Z轴）倾斜/振荡，以在样品3的处理目标表面3a之间重叠倾斜和倾斜/恢复处理目标表面 样品3的3a面向倾斜轴方向（Y轴方向）和倾斜表面状态，其中样品台侧的处理对象表面3a的一部分在倾斜轴线方向（Y轴方向）上突出于倾斜轴方向 处理对象面3的掩模侧的一部分，使得处理对象面3a以低角度照射离子束2，抑制从空隙61或异种材料62得到的突起/凹部63。 因此，在横截面试样的制造中，可以抑制从空隙或异种材料得到的突起/凹部的产生，从而制造适于观察/分析的试样截面。