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    Complementary replacement of material
    1.
    发明授权
    Complementary replacement of material 有权
    补充材料更换

    公开(公告)号：US07399709B1

    公开(公告)日：2008-07-15

    申请号：US10256401

    申请日：2002-09-27

    申请人： Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

    发明人： Burn-Jeng Lin ,  Hua-Tai Lin ,  Ru-Gun Liu ,  Tsai-Sheng Gau ,  Bang-Chien Ho

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76808 ,  H01L2221/1026

    摘要： An image reversal method is described that removes the etch resistance requirement from a resist. A high resolution resist pattern comprised of islands, lines, or trenches is formed with a large process window by exposing through one or more masks including phase edge masks and optionally with resolution enhancement techniques. A complementary material replacement (CMR) layer comprised of an organic polymer or material such as fluorosilicate glass which has a lower etch rate than the resist is coated over the resist pattern. CMR and resist layers are etched simultaneously to provide an image reversed pattern in the CMR layer which is etch transferred into a substrate. The method avoids edge roughness like bird's beak defects in the etched pattern and is useful for applications including forming contact holes in dielectric layers, forming polysilicon gates, and forming trenches in a damascene process. It is also valuable for direct write methods where an image reversal scheme is desired.

    摘要翻译： 描述了去除抗蚀剂的耐蚀刻性要求的图像反转方法。 由岛，线或沟槽组成的高分辨率抗蚀剂图案通过暴露于包括相位边缘掩模的一个或多个掩模以及可选地具有分辨率增强技术而由大的工艺窗口形成。 由有机聚合物或诸如氟硅酸盐玻璃的材料组成的互补材料置换（CMR）层被涂覆在抗蚀剂图案上。 同时蚀刻CMR和抗蚀剂层以在CMR层中提供图像反转图案，其被蚀刻转移到衬底中。 该方法避免了像蚀刻图案中的鸟喙缺陷那样的边缘粗糙度，并且可用于包括在电介质层中形成接触孔，形成多晶硅栅极以及在镶嵌工艺中形成沟槽的应用。 对于需要图像反转方案的直接写入方法也是有价值的。

    Method for metal correlated via split for double patterning
    2.
    发明授权
    Method for metal correlated via split for double patterning 有权
    用于双重图案化的金属相互分离的方法

    公开(公告)号：US08381139B2

    公开(公告)日：2013-02-19

    申请号：US13006608

    申请日：2011-01-14

    申请人： Burn Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Wen-Chun Huang

    发明人： Burn Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Wen-Chun Huang

    IPC分类号： G06F17/50

    CPC分类号： H01L22/10 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G06F17/5036 ,  G06F17/5072 ,  G06F17/5081 ,  H01L21/31144 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The embodiments of via mask splitting methods for double patterning technology described enable via patterning to align to a metal layer underneath or overlying to reduce overlay error and to increase via landing. If adjacent vias violate the G0-mask-split-rule for space or pitch (or both) between vias, the mask assignment of end vias are given higher priority to ensure good landing of end vias, since they are at higher risk of mislanding. The metal correlated via mask splitting methods enable better via performance, such as lower via resistance, and higher via yield.

    摘要翻译： 所描述的用于双重图案化技术的通孔掩模分裂方法的实施例使得能够经由图案化以对准下面的金属层或覆盖以减少覆盖误差并增加通过着陆。 如果相邻的通孔违反了通孔之间的空间或间距（或两者）的G0-掩模分割规则，则优先考虑末端通孔的掩模分配，以确保最终通孔的良好着陆，因为它们具有较高的误放置风险。 通过掩模分离方法相关的金属能够实现更好的通过性能，例如较低的通孔电阻和较高的通孔产量。

    Apparatus and method for immersion lithography
    4.
    发明授权
    Apparatus and method for immersion lithography 有权
    浸没式光刻装置及方法

    公开(公告)号：US07091502B2

    公开(公告)日：2006-08-15

    申请号：US10844178

    申请日：2004-05-12

    申请人： Tsai Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Jeng Lin

    发明人： Tsai Sheng Gau ,  Chun-Kuang Chen ,  Ru-Gun Liu ,  Burn Jeng Lin

    IPC分类号： H01L21/027 ,  G03F7/20

    CPC分类号： G03F7/70341

    摘要： An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

    摘要翻译： 用于半导体制造的浸没式光刻系统提供了相对于晶片表面移动的透镜组件，并且包括联接到透镜组件并沿着透镜组件移动的喷嘴和排出组件。 喷嘴和排出组件可以围绕透镜周向地相对设置，或者可以设置围绕透镜的环形环，并且包括多个可选择的交替喷嘴和排水沟。 喷嘴和排出组件可旋转地围绕透镜。 将被图案化的晶片的至少一部分浸入由喷嘴组件提供的液体中，并且通过操纵喷嘴和排出组件来控制流动方向。 可以有利地向外指向流动方向以减少颗粒污染。

    Method for metal correlated via split for double patterning
    5.
    发明授权
    Method for metal correlated via split for double patterning 有权
    用于双重图案化的金属相互分离的方法

    公开(公告)号：US08762899B2

    公开(公告)日：2014-06-24

    申请号：US13743087

    申请日：2013-01-16

    申请人： Burn Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Wen-Chun Huang

    发明人： Burn Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Wen-Chun Huang

    IPC分类号： G06F17/50

    CPC分类号： H01L22/10 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G06F17/5036 ,  G06F17/5072 ,  G06F17/5081 ,  H01L21/31144 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of via patterning mask assignment for a via layer using double patterning technology, the method includes determining, using a processor, if a via of the via layer intercepts an underlying or overlaying metal structure assigned to a first metal mask. If the via intercepts the metal structure assigned to the first metal mask, assigning the via to a first via mask, wherein the first via mask aligns with the first metal mask. Otherwise, assigning the via to a second via mask, wherein the second via mask aligns with a second metal mask different from the first metal mask.

    摘要翻译： 一种通过使用双重图案化技术对通孔层进行图案掩模分配的方法，所述方法包括使用处理器来确定通孔层的通孔是否拦截分配给第一金属掩模的下面或重叠的金属结构。 如果通孔截取分配给第一金属掩模的金属结构，则将通孔分配给第一通孔掩模，其中第一通孔掩模与第一金属掩模对准。 否则，将通孔分配给第二通孔掩模，其中第二通孔掩模与不同于第一金属掩模的第二金属掩模对准。

    Immersion optical projection system
    7.
    发明申请
    Immersion optical projection system 有权
    浸入式光学投影系统

    公开(公告)号：US20050286030A1

    公开(公告)日：2005-12-29

    申请号：US11009505

    申请日：2004-12-10

    申请人： Jen-Chieh Shih ,  Burn-Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Chun-Kuang Chen ,  Chin-Hsiang Lin ,  Horng-Huei Tseng

    发明人： Jen-Chieh Shih ,  Burn-Jeng Lin ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Chun-Kuang Chen ,  Chin-Hsiang Lin ,  Horng-Huei Tseng

    IPC分类号： G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70341

    摘要： An immersion optical projection system for photolithography is provided. A transparent plate is located between a last lens element and the wafer during a usage of the system. The transparent plate has a lens-side surface and a wafer-side surface. The system is adapted to have a layer of lens-side fluid located between the last lens element and the lens-side surface of the transparent plate, e.g., when the last lens element is operably located over the wafer during a photolithography process. The system is also adapted to have a layer of wafer-side fluid located between the wafer-side surface of the transparent plate and the wafer, during a usage of the system. The wafer-side fluid may or may not be fluidly connected to the lens-side fluid. The wafer-side fluid may or may not differ from the lens-side fluid.

    摘要翻译： 提供了一种用于光刻的浸没式光学投影系统。 在使用系统期间，透明板位于最后一个透镜元件和晶片之间。 透明板具有透镜侧表面和晶片侧表面。 该系统适于具有位于最后透镜元件和透明板的透镜侧表面之间的透镜侧流体层，例如当光刻工艺期间最后一个透镜元件可操作地位于晶片上方时。 该系统还适于在系统的使用期间具有位于透明板的晶片侧表面和晶片之间的晶片侧流体层。 晶片侧流体可以或可以不流体地连接到透镜侧流体。 晶片侧流体可以或可以不与透镜侧流体不同。

    Device and method for providing wavelength reduction with a photomask
    8.
    发明授权
    Device and method for providing wavelength reduction with a photomask 有权
    用光掩模提供波长缩小的装置和方法

    公开(公告)号：US08563198B2

    公开(公告)日：2013-10-22

    申请号：US13160231

    申请日：2011-06-14

    申请人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    发明人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC分类号： G03F1/46 ,  G03F1/48

    CPC分类号： G03F1/50 ,  G03F1/46

    摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    摘要翻译： 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK
    9.
    发明申请
    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK 有权
    用光源提供波长减小的装置和方法

    公开(公告)号：US20110244378A1

    公开(公告)日：2011-10-06

    申请号：US13160231

    申请日：2011-06-14

    申请人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    发明人： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC分类号： G03F1/00 ,  G03F7/20

    CPC分类号： G03F1/50 ,  G03F1/46

    摘要： Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    摘要翻译： 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。