公开(公告)号：US07985297B2

公开(公告)日：2011-07-26

申请号：US12500141

申请日：2009-07-09

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

IPC分类号： H01L21/02

CPC分类号： C11D11/0052 ,  C11D7/08 ,  C11D7/28 ,  C11D7/3209

摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

摘要翻译： 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。

公开(公告)号：US20100009883A1

公开(公告)日：2010-01-14

申请号：US12500141

申请日：2009-07-09

申请人： Jung-Dae PARK ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

发明人： Jung-Dae PARK ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

IPC分类号： C11D3/20

CPC分类号： C11D11/0052 ,  C11D7/08 ,  C11D7/28 ,  C11D7/3209

摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

摘要翻译： 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。

公开(公告)号：US20080000502A1

公开(公告)日：2008-01-03

申请号：US11757179

申请日：2007-06-01

申请人： Jung-Dae PARK ,  Seung-Ki CHAE ,  Bo-Yong LEE ,  Myoung-Ok HAN ,  Jun-Hee LEE ,  Se-Yeon KIM

发明人： Jung-Dae PARK ,  Seung-Ki CHAE ,  Bo-Yong LEE ,  Myoung-Ok HAN ,  Jun-Hee LEE ,  Se-Yeon KIM

IPC分类号： B08B7/00 ,  C11D3/02 ,  C11D7/32 ,  C11D17/00

CPC分类号： C11D7/06 ,  C11D3/2044 ,  C11D7/261 ,  C11D11/0047 ,  G01R3/00

摘要： A composition for cleaning a probe card that may be a part of a semiconductor probe system and a method of cleaning the probe card using the composition is provided. In one embodiment, the composition includes a basic compound, an alcohol compound, and water. The composition for cleaning the probe card may prevent the probe card from being worn away or corroded, and may effectively remove impurities such as aluminum, aluminum oxide, or organic impurities from the probe card.

摘要翻译： 提供了用于清洁可能是半导体探针系统的一部分的探针卡的组合物和使用该组合物清洁探针卡的方法。 在一个实施方案中，组合物包括碱性化合物，醇化合物和水。 用于清洁探针卡的组合物可以防止探针卡被磨损或腐蚀，并且可以有效地从探针卡中去除诸如铝，氧化铝或有机杂质的杂质。

公开(公告)号：US6159646A

公开(公告)日：2000-12-12

申请号：US148160

申请日：1998-09-04

申请人： Mi-sook Jeon ,  Chun-deuk Lee ,  Bo-yong Lee

发明人： Mi-sook Jeon ,  Chun-deuk Lee ,  Bo-yong Lee

IPC分类号： C11D7/26 ,  C11D7/50 ,  G03F7/16 ,  G03F7/30 ,  G03F7/42 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/168 ,  G03F7/3021 ,  G03F7/422

摘要： A thinner composition for removing photoresist, a rework method for wafers, and a method of manufacturing semiconductor devices are provided. The thinner composition is applied for removing excess photoresist coated on the edge side or back side of wafer. The thinner may be a mixture of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP), and .tau.-butyro lactone (GBL), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP). The rework process is carried out, using the above thinner compositions, on the wafers having excess coated photoresist due to an etching failure. The method of manufacturing semiconductor devices includes a rinsing step for removing the excess coated photoresist on the edge side or back side of wafer by using the above thinner compositions.

摘要翻译： 提供了用于去除光致抗蚀剂的较薄组合物，晶片的返工方法以及半导体器件的制造方法。 施加较薄的组合物以除去涂覆在晶片的边缘侧或背面的多余的光刻胶。 稀释剂可以是乳酸乙酯（EL），乙基-3-乙氧基丙酸酯（EEP）和叔丁内酯（GBL）的混合物，或乳酸乙酯（EL）和乙酸3-乙氧基丙酸酯 EEP）或乳酸乙酯（EL）和乙基-3-乙氧基丙酸酯（EEP）的混合物。 使用上述更薄的组合物，由于蚀刻失败，在具有过量涂覆的光致抗蚀剂的晶片上进行返工过程。 制造半导体器件的方法包括通过使用上述更薄组合物去除晶片的边缘侧或背面上的多余的涂覆光致抗蚀剂的漂洗步骤。

公开(公告)号：US06655042B2

公开(公告)日：2003-12-02

申请号：US10060021

申请日：2002-01-29

申请人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

发明人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

IPC分类号： F26B300

CPC分类号： H01L21/67034

摘要： A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

摘要翻译： 提供了用于干燥半导体衬底的干燥系统。 所述干燥系统包括：用于容纳蒸汽分配器和流体浴的室，所述流体浴设置在所述室的下部，所述分配器设置在所述室的上部，用于分配用于干燥所述基板的蒸气; 以及流体流动系统，用于将流体流供应到所述流体浴中，以清洁和干燥所述基底并从所述流体浴排出所述流体，其中所述腔室包括设置在所述上​​部的多个排气口，用于排出蒸气。