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1.发明申请公开(公告)号：US20140073143A1
公开(公告)日：2014-03-13
申请号：US13612538
申请日：2012-09-12
IPC分类号： C23C16/505 , H01L21/31 , F17D1/00
CPC分类号： C23C16/505 , C23C16/452 , C23C16/45563 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J2237/3321 , H01L21/02274 , H01L21/0262 , H01L21/28556 , Y10T137/6851
摘要： Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
摘要翻译： 公开了与用于处理半导体衬底的硬件和方法相关的实施例。 一个示例性膜沉积反应器包括处理气体分配器，其包括等离子体气体进料入口，该等离子体气体进料入口定位成将等离子体气体供应到膜沉积反应器内的等离子体产生区域;以及前体气体进料入口，其位于将等离子体产生 地区; 绝缘限制容器，其被配置为将所述膜沉积反应器内的等离子体产生区域保持在较低的压力;以及电感耦合等离子体（ICP）线圈，其布置在所述绝缘限制容器的侧壁的一部分周围并且被定位成使得所述侧壁将 来自ICP线圈的等离子体产生区域; 以及基座，被配置为支撑半导体衬底，使得半导体衬底的膜沉积表面暴露于形成在处理气体分配器下游的反应区域。
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公开(公告)号：US07666474B2
公开(公告)日：2010-02-23
申请号：US12116894
申请日：2008-05-07
申请人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
发明人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
CPC分类号： C23C16/32 , C23C16/4554 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L29/4966
摘要： Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.
摘要翻译： 提供了形成金属碳化物膜的方法。 在一些实施例中，将衬底暴露于过渡金属物质和等离子体激发的氩的交替脉冲。 过渡金属物质与碳物质反应以沉积金属碳化物膜。 底物与过渡金属物质同时暴露于碳物质，或者基板在与过渡金属物质的脉冲暂时分离的脉冲中暴露于碳物质。 在一些实施方案中，碳物质和过渡金属物质形成相同前体化合物的一部分，例如金属有机化合物。
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公开(公告)号：USD698904S1
公开(公告)日：2014-02-04
申请号：US29412887
申请日：2012-02-08
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4.发明授权公开(公告)号：US09021985B2
公开(公告)日：2015-05-05
申请号：US13612538
申请日：2012-09-12
IPC分类号： C23C16/505 , C23C16/452 , C23C16/455 , C23C16/507 , H01J37/32
CPC分类号： C23C16/505 , C23C16/452 , C23C16/45563 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J2237/3321 , H01L21/02274 , H01L21/0262 , H01L21/28556 , Y10T137/6851
摘要： Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
摘要翻译： 公开了与用于处理半导体衬底的硬件和方法相关的实施例。 一个示例性膜沉积反应器包括处理气体分配器，其包括等离子体气体进料入口，该等离子体气体进料入口定位成将等离子体气体供应到膜沉积反应器内的等离子体产生区域;以及前体气体进料入口，其位于将等离子体产生 地区; 绝缘限制容器，其被配置为将所述膜沉积反应器内的等离子体产生区域保持在较低的压力;以及电感耦合等离子体（ICP）线圈，其布置在所述绝缘限制容器的侧壁的一部分周围并且被定位成使得所述侧壁将 来自ICP线圈的等离子体产生区域; 以及基座，被配置为支撑半导体衬底，使得半导体衬底的膜沉积表面暴露于形成在处理气体分配器下游的反应区域。
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公开(公告)号：US20090280267A1
公开(公告)日：2009-11-12
申请号：US12116894
申请日：2008-05-07
申请人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
发明人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
CPC分类号： C23C16/32 , C23C16/4554 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L29/4966
摘要： Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.
摘要翻译： 提供了形成金属碳化物膜的方法。 在一些实施例中，将衬底暴露于过渡金属物质和等离子体激发的氩的交替脉冲。 过渡金属物质与碳物质反应以沉积金属碳化物膜。 底物与过渡金属物质同时暴露于碳物质，或者基板在与过渡金属物质的脉冲暂时分离的脉冲中暴露于碳物质。 在一些实施方案中，碳物质和过渡金属物质形成相同前体化合物的一部分，例如金属有机化合物。
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