公开(公告)号：US4330796A

公开(公告)日：1982-05-18

申请号：US116686

申请日：1980-01-30

Applicant: Constantine N. Anagnostopoulos ,  Teh-Hsuang Lee ,  Bruce C. Burkey ,  James P. Lavine

Inventor： Constantine N. Anagnostopoulos ,  Teh-Hsuang Lee ,  Bruce C. Burkey ,  James P. Lavine

IPC: H01L27/148 ,  H04N5/3728 ,  H04N5/376 ,  H04N5/378 ,  H04N3/14

CPC classification number: H04N3/1537 ,  H01L27/14831 ,  Y10S358/906

Abstract: In accordance with the present invention, a conventional area image sensor of the interline transfer type is so configured as to be readable in blocks of adjacent photosite rows, thereby enabling the modified sensor to be read out at fast frame rates. The resulting sensor, although designed for block readout, can be produced using conventional manufacturing processes.

Abstract translation: 根据本发明，行间传输类型的常规区域图像传感器被配置为在相邻的光子行的块中是可读的，从而能够以快速帧速率读出修改的传感器。 所得到的传感器虽然设计用于块读出，但可以使用传统的制造工艺来生产。

公开(公告)号：US5448089A

公开(公告)日：1995-09-05

申请号：US219758

申请日：1994-03-29

Applicant: Edmund K. Banghart ,  Edward T. Nelson ,  William F. DesJardin ,  James P. Lavine ,  Bruce C. Burkey

Inventor： Edmund K. Banghart ,  Edward T. Nelson ,  William F. DesJardin ,  James P. Lavine ,  Bruce C. Burkey

IPC: H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H01L29/10 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

CPC classification number: H01L29/1062 ,  H01L27/14831

Abstract: A charge-coupled device having an improved charge-transfer efficiency over a broad temperature range. The device comprises a substrate of semiconductor material of one conductivity type; a first buried channel formed in the substrate and of a conductivity type opposite to that of the substrate; a second buried channel of a conductivity type opposite to that of the substrate formed in the same region of the substrate as the first buried channel and having a greater depth of penetration into the substrate than the first buried channel; compensated regions formed at intervals in the buried channels providing a means for containing individual packets of charge and shaped for inducing a narrow channel effect and for producing a fringing electric field in a direction of charge transfer in uncompensated buried channel regions; electrode gates associated with each pair of adjoining compensated and uncompensated regions in the device; and means for clocking the electrodes for causing a string of charge packets to be transferred through the device.

Abstract translation: 一种电荷耦合器件，其在宽温度范围内具有改善的电荷转移效率。 该器件包括一种导电类型的半导体材料的衬底; 形成在所述基板中并且与所述基板相反的导电类型的第一埋入通道; 导电类型的第二掩埋沟道，其形成在与所述第一掩埋沟道相同的衬底区域中，并且比所述第一掩埋沟道具有比所述衬底更大的穿透深度; 在掩埋沟道中间隔地形成的补偿区域提供了一种用于容纳单独的电荷包并且被成形为用于诱导窄通道效应并用于在未补偿的掩埋沟道区域中的电荷转移方向上产生边缘电场的装置; 与设备中的每对相邻补偿和未补偿区域相关联的电极门; 以及用于使电极计时以使一串电荷包通过该装置传送的装置。

公开(公告)号：US5264945A

公开(公告)日：1993-11-23

申请号：US777860

申请日：1991-10-16

Applicant: Ram Kannegundla ,  Bruce C. Burkey

Inventor： Ram Kannegundla ,  Bruce C. Burkey

IPC: H04N1/193 ,  H04N5/335 ,  H04N5/372 ,  H04N3/14

CPC classification number: H04N1/193 ,  H04N3/1593 ,  H04N5/335

Abstract: A plurality of linear image sensors of a contact array scanner are read out at relatively low sensor pixel rates using only a limited number of expensive digital components. For a contact array scanner having sensors with both forward and reverse readouts, outputs are selected and read together in parallel from successive pairs of forward sensor readouts. Individual outputs from each of the forward readout pairs are sequentially sampled and held and the samples from each of the forward readout pairs are digitized. Outputs are also selected and read together in parallel from successive pairs of reverse sensor readouts. Individual outputs from each of the reverse readout pairs are sequentially sampled and held and the samples from each of the reverse readout pairs are digitized. Digitized samples from successive ones of the forward readout pairs are written into alternate ones of two pairs of first in first out digital memories and digitized samples from the reverse readout pairs are written into alternate ones of two pairs of last in first out memories. Finally, the contents of each pair of first in first out memories and the contents of each pair of last in first out memories are read out while the next pairs of digitized samples are being written into the other sets of first in first out and last in first out digital memories.

Abstract translation: 接触阵列扫描器的多个线性图像传感器仅使用有限数量的昂贵的数字部件以相对低的传感器像素速率读出。 对于具有正向和反向读出的传感器的接触阵列扫描器，从连续的正向传感器读出对中选择并并行地读出输出。 来自每个正向读出对的各个输出被依次采样和保持，并且来自每个正向读出对的采样被数字化。 输出也从连续的反向传感器读数对中并行选择和读出。 来自每个反向读出对的单个输出被顺序采样和保持，并且来自每个反向读出对的样本被数字化。 来自连续的正向读出对的数字化采样被写入两对先进先出的数字存储器中的交替的样本，并且来自反向读出对的数字化样本被写入两对最后一个先出存储器中的替代的样本。 最后，读出每一对先进先出存储器的内容和每对最后一个先出存储器的内容，同时将下一对数字化样本写入其他先进先出的最后一组 先出数字记忆。

公开(公告)号：US4613895A

公开(公告)日：1986-09-23

申请号：US959830

申请日：1978-11-13

Applicant: Bruce C. Burkey ,  Roger S. VanHeyningen ,  Richard A. Spaulding ,  Edward L. Wolf

Inventor： Bruce C. Burkey ,  Roger S. VanHeyningen ,  Richard A. Spaulding ,  Edward L. Wolf

IPC: H01L27/148 ,  H01L29/10 ,  H04N9/04

CPC classification number: H01L27/148 ,  H01L27/14868 ,  H01L29/1062 ,  H04N9/045

Abstract: An image sensing element in a solid state imaging device is provided with a plurality of superposed channels disposed at respective distances from a light receiving surface of the device, each of such channels having a different characteristic spectral response due to the differential absorption of light by a semiconductor. By so disposing the channels, the device becomes a color imaging sensor having optimized resolution. The top channel, i.e. the channel nearest the surface of the device, may be either a "surface" channel or a "buried" channel, the lower channel(s) being buried channels. Depending upon the design of the element, either electrons or holes may be accumulated as photocharges in respective superposed channels. The color photocharges generated in respective channels of such an image sensing element are simultaneously moved in a plurality of superposed channels by a multiple superposed channel signal handling device such as a multiple channel charge coupled device (CCD), thus the solid state imaging device does not require special timing networks to correct for phase differences between color signals which result from a common point within an image.

Abstract translation: 固态成像装置中的图像感测元件设置有多个重叠通道，该多个叠加通道设置在与器件的光接收表面相距的距离处，由于光的差别吸收，每个这样的通道具有不同的特征光谱响应 半导体。 通过这样设置通道，该设备成为具有优化分辨率的彩色成像传感器。 顶部通道，即最靠近设备表面的通道，可以是“表面”通道或“埋入”通道，下通道是埋入通道。 根据元件的设计，电子或空穴可以在相应叠加通道中作为光电荷累积。 在这种图像感测元件的各个通道中产生的彩色光电荷通过诸如多通道电荷耦合器件（CCD）的多重重叠通道信号处理装置在多个重叠通道中同时移动，因此固态成像器件不 需要特殊的定时网络来校正由图像中的公共点产生的颜色信号之间的相位差。

公开(公告)号：US4255760A

公开(公告)日：1981-03-10

申请号：US79736

申请日：1979-09-28

Applicant: Peter M. Zeitzoff ,  Teh-Hsuang Lee ,  Bruce C. Burkey ,  Rajinder P. Khosla ,  Thomas M. Kelly

Inventor： Peter M. Zeitzoff ,  Teh-Hsuang Lee ,  Bruce C. Burkey ,  Rajinder P. Khosla ,  Thomas M. Kelly

IPC: H01L27/148 ,  H01L29/10 ,  H04N9/04

CPC classification number: H01L27/14887 ,  H01L27/14825 ,  H01L27/14868 ,  H01L29/1062

Abstract: A multiple, superposed-channel, solid-state, color image sensor of the "parallel transfer" type includes a plurality of superposed generally "ladder shaped" channels in a semiconductor substrate. One "side rail" of the ladder shape provides the channel structure for a multiple, superposed-channel signal handling device, such as a charge coupled shift register. The "rungs" of the ladder shape provide a plurality of multiple, superposed-channel color image sensing sites, and the other "side rail" of the ladder shape provides a plurality of superposed "anti-bloom" drains, one drain per channel. Electrical contact to a buried channel is provided by a V-groove etching technique. A V-groove extending from the surface of the device into the buried channel provides physical access to the buried channel. A conductor, in ohmic contact with the channel, extends from the bottom of the V-groove to the surface of the device to provide electrical contact with the buried channel.

Abstract translation: “并行转印”型的多重重叠通道固体彩色图像传感器包括在半导体衬底中的多个重叠的大体上“梯形”通道。 梯形形状的一个“侧轨”为多重重叠通道信号处理装置（例如电荷耦合移位寄存器）提供通道结构。 梯形的“梯级”提供多个多个重叠通道的彩色图像感测位置，梯形的另一个“侧轨”提供多个叠加的“防绽放”排水口，每个通道一个排水口。 通过V槽蚀刻技术提供与埋入通道的电接触。 从器件表面延伸到埋入通道中的V形沟槽提供对埋入通道的物理接触。 与沟道欧姆接触的导体从V形槽的底部延伸到器件的表面以提供与掩埋沟道的电接触。

公开(公告)号：US5051832A

公开(公告)日：1991-09-24

申请号：US478857

申请日：1990-02-12

Applicant: David L. Losee ,  Bruce C. Burkey ,  Teh-Hsuang Lee

Inventor： David L. Losee ,  Bruce C. Burkey ,  Teh-Hsuang Lee

IPC: H01L27/148 ,  H04N5/343 ,  H04N5/345 ,  H04N5/3728 ,  H04N5/376

CPC classification number: H04N3/1537 ,  H01L27/14831

Abstract: An interline transfer type area image sensor is described which can selectively operate in either an interlaced or non-interlaced read-out mode. The sensor includes a plurality of vertical CCD shift registers. Each shift register has an ion implanted shift transfer barrier or storage regions such that only one layer of gate electrode is required by each voltage clock, and a structure for selectively applying voltages to the clock lines for alternate rows of one or both of the vertical shift register electrodes.

Abstract translation: 描述了可以选择性地以隔行扫描或非隔行扫描模式操作的行间传送类型区域图像传感器。 传感器包括多个垂直CCD移位寄存器。 每个移位寄存器具有离子注入的移位传递势垒或存储区域，使得每个电压时钟仅需要一层栅电极，以及用于选择性地向时钟线施加电压的结构，用于垂直位移中的一个或两者的交替行 寄存电极。

公开(公告)号：US5130774A

公开(公告)日：1992-07-14

申请号：US551963

申请日：1990-07-12

Applicant: Eric G. Stevens ,  Teh-Hsuang Lee ,  Bruce C. Burkey

Inventor： Eric G. Stevens ,  Teh-Hsuang Lee ,  Bruce C. Burkey

IPC: H04L27/14 ,  H01L27/148

CPC classification number: H01L27/14887 ,  H01L27/14806

Abstract: A solid-state image sensor includes a substrate of a semiconductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs are in the substrate at the surface. Each CCD includes a channel region of the opposite conductivity type in the substrate and a plurality of conductive gates extending across and insulated from the channel region. The conductive gates extend laterally across the channel regions of all of the CCDs and divide the channel regions into a plurality of phases and pixels. A drain region of the opposite conductivity type is in the substrate at the surface and extends along the channel region of at least one of the CCDs. A separate overflow channel region of the opposite conductivity type is in the substrate at said surface and extends from each of the CCD channel region phases to the adjacent drain region. A separate overflow barrier region of the one conductivity type is in the substrate and extends across an overflow channel region between the CCD channel region and the drain to control the flow of charge carriers from each phase of the CCD channel region to the drain. Each of the CCDs may have a separate drain region or two adjacent CCDs may share a common drain region. A CCD barrier region extends across the channel region in each phase. The CCD barrier region contains the same impurity concentration as the overflow-barrier region of its respective phase and may be connected to the overflow-barrier region.

Abstract translation: 固态图像传感器包括具有表面的一种导电类型的半导体材料的衬底。 多个间隔开的平行CCD位于表面的基板中。 每个CCD包括在衬底中具有相反导电类型的沟道区域和延伸跨过沟道区域并且与沟道区域绝缘的多个导电栅极。 导电栅极跨越所有CCD的沟道区域横向延伸，并将沟道区域分成多个相位和像素。 相反导电类型的漏区在表面处于衬底中并且沿着至少一个CCD的沟道区延伸。 相反导电类型的单独的溢流通道区域位于所述表面处的衬底中，并且从每个CCD沟道区域相位延伸到相邻的漏极区域。 一个导电类型的单独的溢出屏障区域在衬底中并且延伸穿过CCD沟道区域和漏极之间的溢出沟道区域，以控制电荷载流子从CCD沟道区域的每个相位到漏极的流动。 每个CCD可以具有单独的漏极区域，或者两个相邻的CCD可以共享共同的漏极区域。 CCD屏障区域延伸穿过每个相位中的沟道区域。 CCD屏障区域包含与其各自相位的溢出阻挡区域相同的杂质浓度，并且可以连接到溢出阻挡区域。

公开(公告)号：US5122850A

公开(公告)日：1992-06-16

申请号：US644163

申请日：1991-01-22

Applicant: Bruce C. Burkey

Inventor： Bruce C. Burkey

IPC: H01L27/148

CPC classification number: H01L27/14887 ,  H01L27/14831

Abstract: An interline area image sensor structure with particular doping arrangements which provides an effective antiblooming control and, when a voltage signal is applied to each transfer gate, all the charge collected in a photodiode will be depleted and transferred to an interline CCD.

Abstract translation: 具有特定掺杂装置的线间区域图像传感器结构，其提供有效的防护控制，并且当向每个传输门施加电压信号时，在光电二极管中收集的所有电荷将被耗尽并传输到行间CCD。