公开(公告)号：US07897458B2

公开(公告)日：2011-03-01

申请号：US12076878

申请日：2008-03-25

申请人： Jaegab Lee ,  Jang-Sik Lee ,  Chi Young Lee ,  Byeong Hyeok Sohn

发明人： Jaegab Lee ,  Jang-Sik Lee ,  Chi Young Lee ,  Byeong Hyeok Sohn

IPC分类号： H01L21/336

CPC分类号： H01L29/42324 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/513

摘要： Provided is a method of forming a floating gate, a non-volatile memory device using the same, and a method of fabricating the non-volatile memory device, in which nano-crystals of nano-size whose density and size can be easily adjusted, are synthesized using micelles so as to be used as the floating gate of the non-volatile memory device. The floating gate is fabricated by forming a tunnel oxide film on the semiconductor substrate, coating a gate formation solution on the tunnel oxide film in which the gate formation solution includes micelle templates into which precursors capable of synthesizing metallic salts in nano-structures formed by a self-assembly method are introduced, and arranging the metallic salts on the tunnel oxide film by removing the micelle templates, to thereby form the floating gate.

摘要翻译： 提供了一种形成浮动栅极的方法，使用该浮动栅极的非易失性存储器件，以及制造非易失性存储器件的方法，其中可以容易地调节其密度和尺寸的纳米尺寸纳米晶体， 使用胶束合成以便用作非易失性存储器件的浮动栅极。 通过在半导体衬底上形成隧道氧化膜来制造浮栅，在隧道氧化膜上涂覆栅极形成溶液，其中栅极形成溶液包含胶束模板，其中能够由纳米结构形成的纳米结构中的金属盐合成前体 引入自组装方法，并通过去除胶束模板将金属盐布置在隧道氧化物膜上，从而形成浮栅。

公开(公告)号：US20100276747A1

公开(公告)日：2010-11-04

申请号：US12588871

申请日：2009-10-30

申请人： Jang-Sik Lee ,  Byeong Hyeok Sohn ,  Yong Mu Kim ,  Jeong Hwa Kwon ,  Hyunjung Shin ,  Jaegab Lee

发明人： Jang-Sik Lee ,  Byeong Hyeok Sohn ,  Yong Mu Kim ,  Jeong Hwa Kwon ,  Hyunjung Shin ,  Jaegab Lee

IPC分类号： H01L29/792 ,  H01L29/51 ,  H01L21/31 ,  H01L21/28

CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881

摘要： Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.

摘要翻译： 本发明提供了具有优异的记忆特性的电荷捕获层，形成电荷捕捉层的方法，使用电荷捕获层的非易失性存储器件以及制造非易失性存储器件的方法，其中通过 将具有优异编程特性的纳米颗粒与具有优异擦除特性的纳米颗粒混合使用作为电荷俘获层。 用于纳米颗粒的电荷捕获层在隧道氧化物膜和控制氧化物膜之间不连续地形成，并且包括至少两种不同种类的许多纳米颗粒。

公开(公告)号：US20080237692A1

公开(公告)日：2008-10-02

申请号：US12076878

申请日：2008-03-25

申请人： Jaegab LEE ,  Jang-Sik LEE ,  Chi Young LEE ,  Byeong Hyeok SOHN

发明人： Jaegab LEE ,  Jang-Sik LEE ,  Chi Young LEE ,  Byeong Hyeok SOHN

IPC分类号： H01L29/788 ,  H01L21/28

CPC分类号： H01L29/42324 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/513

摘要： Provided is a method of forming a floating gate, a non-volatile memory device using the same, and a method of fabricating the non-volatile memory device, in which nano-crystals of nano-size whose density and size can be easily adjusted, are synthesized using micelles so as to be used as the floating gate of the non-volatile memory device. The floating gate is fabricated by forming a tunnel oxide film on the semiconductor substrate, coating a gate formation solution on the tunnel oxide film in which the gate formation solution includes micelle templates into which precursors capable of synthesizing metallic salts in nano-structures formed by a self-assembly method are introduced, and arranging the metallic salts on the tunnel oxide film by removing the micelle templates, to thereby form the floating gate.

摘要翻译： 提供了一种形成浮动栅极的方法，使用该浮动栅极的非易失性存储器件，以及制造非易失性存储器件的方法，其中可以容易地调节其密度和尺寸的纳米尺寸的纳米晶体， 使用胶束合成以便用作非易失性存储器件的浮动栅极。 通过在半导体衬底上形成隧道氧化膜来制造浮栅，在隧道氧化膜上涂覆栅极形成溶液，其中栅极形成溶液包含胶束模板，其中能够由纳米结构形成的纳米结构中的金属盐合成前体 引入自组装方法，并通过去除胶束模板将金属盐布置在隧道氧化物膜上，从而形成浮栅。