利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.016 秒)

    Pivoting shield assembly for hat
    1.
    发明授权
    Pivoting shield assembly for hat 有权

    公开(公告)号：US11617408B2

    公开(公告)日：2023-04-04

    申请号：US17316831

    申请日：2021-05-11

    申请人： Chien-Hung Lu

    发明人： Chien-Hung Lu

    IPC分类号： A42B3/22

    摘要： A pivoting shield assembly for hats is revealed. The pivoting shield assembly includes mounting slots arranged at two sides of a hat, a pivot base mounted to each mounting slot, a first connecting rod and a second connecting rod each of which having one end pivotally connected to the pivot base and the other end pivotally mounted to a shield, and a pathway groove disposed on an inner side of the first connecting rod. The pivot base includes an elastic locking piece which is mounted and moveable in the pathway groove correspondingly. Thereby lifting up and pulling down of the shield are more precise and having different stages. The pivoting shield assembly for hats is practical.

    Ultraviolet blocking layer
    2.
    发明授权
    Ultraviolet blocking layer 有权
    紫外阻挡层

    公开(公告)号：US07157331B2

    公开(公告)日：2007-01-02

    申请号：US10858352

    申请日：2004-06-01

    申请人： Chien Hung Lu ,  Chin Ta Su

    发明人： Chien Hung Lu ,  Chin Ta Su

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/44 ,  H01L31/0288 ,  H01L29/80 ,  H01L29/76

    CPC分类号： H01L31/02164

    摘要： Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic radiation generated by a plasma process, which may otherwise damage a semiconductor can be blocked from one or more layers below an ultraviolet blocking layer.

    摘要翻译： 公开了关于阻挡来自半导体的紫外线电磁辐射的方法和装置。 紫外电磁辐射，例如由等离子体处理产生的紫外线电磁辐射，否则可能会损坏半导体，可以从紫外线阻挡层下方的一层或多层阻挡。

    Ultraviolet blocking layer
    4.
    发明申请
    Ultraviolet blocking layer 有权
    紫外阻挡层

    公开(公告)号：US20050275105A1

    公开(公告)日：2005-12-15

    申请号：US10858352

    申请日：2004-06-01

    申请人： Chien Hung Lu ,  Chin Ta Su

    发明人： Chien Hung Lu ,  Chin Ta Su

    IPC分类号： C30B1/00 ,  H01L23/552 ,  H01L31/0216

    CPC分类号： H01L31/02164

    摘要： Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic radiation generated by a plasma process, which may otherwise damage a semiconductor can be blocked from one or more layers below an ultraviolet blocking layer.

    摘要翻译： 公开了关于阻挡来自半导体的紫外线电磁辐射的方法和装置。 紫外电磁辐射，例如由等离子体处理产生的紫外线电磁辐射，否则可能会损坏半导体，可以从紫外线阻挡层下方的一层或多层阻挡。

    Method of filling intervals and fabricating shallow trench isolation structures
    5.
    发明授权
    Method of filling intervals and fabricating shallow trench isolation structures 有权
    填充间隔和制造浅沟槽隔离结构的方法

    公开(公告)号：US06855617B1

    公开(公告)日：2005-02-15

    申请号：US10707083

    申请日：2003-11-20

    申请人： Chien-Hung Lu ,  Chin-Ta Su ,  Kuang-Chao Chen

    发明人： Chien-Hung Lu ,  Chin-Ta Su ,  Kuang-Chao Chen

    IPC分类号： H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/76224

    摘要： A method of filling intervals between protruding structures is provided. A substrate with a plurality of protruding structures thereon is provided. The protruding structures are distributed over the substrate such that intervals are formed between adjacent protruding structures. A first dielectric layer is formed over the substrate so that the dielectric material fills the intervals between the protruding structures and covers the protruding structures as well. The first dielectric layer has a plurality of apertures therein located at a level above a top section of the protruding structures. A chemical/mechanical polishing operation is performed to remove a portion of the dielectric layer and expose the apertures to form a plurality of openings. An anisotropic etching operation is performed to increase the width of these openings. Finally, a second dielectric layer is formed over the first dielectric layer to fill the openings completely.

    摘要翻译： 提供了一种在突出结构之间填充间隔的方法。 提供其上具有多个突出结构的基板。 突出结构分布在基板上，使得在相邻突出结构之间形成间隔。 第一电介质层形成在衬底上，使得介电材料填充突出结构之间的间隔并且也覆盖突出结构。 第一电介质层具有位于突出结构的顶部的上方的多个孔。 执行化学/机械抛光操作以去除电介质层的一部分并暴露孔以形成多个开口。 进行各向异性蚀刻操作以增加这些开口的宽度。 最后，在第一介电层上形成第二电介质层，以完全填充开口。

    Headwear with a protective shield
    6.
    发明授权
    Headwear with a protective shield 有权

    公开(公告)号：US11805839B2

    公开(公告)日：2023-11-07

    申请号：US17585578

    申请日：2022-01-27

    申请人： Chien-Hung Lu

    发明人： Chien-Hung Lu

    IPC分类号： A42B3/22 ,  A42B1/0184

    CPC分类号： A42B3/222 ,  A42B1/0184

    摘要： A headwear includes a hat having two connection portions formed to two opposite sides of the hat. Two connectors are respectively connected to the two connection portions of the hat by two respective first end parts thereof. Two first arms are respectively and pivotably connected between two respective second end parts of the two connectors and a protective shield. Two second arms are respectively and pivotably connected between two respective second end parts of the two connectors and the protective shield. The first and second arms form a link mechanism to smoothly pivot the protective shield between its operation position and its folded position relative to the hat.

    HDPCVD process and method for improving uniformity of film thickness
    7.
    发明授权
    HDPCVD process and method for improving uniformity of film thickness 有权
    HDPCVD工艺和提高膜厚均匀性的方法

    公开(公告)号：US07235496B2

    公开(公告)日：2007-06-26

    申请号：US10711512

    申请日：2004-09-23

    申请人： Chien-Hung Lu ,  Chin-Ta Su

    发明人： Chien-Hung Lu ,  Chin-Ta Su

    IPC分类号： H01L21/31

    CPC分类号： C23C16/50 ,  C23C16/4584

    摘要： A high density plasma chemical vapor deposition (HDPCVD) process is disclosed. First, a first deposition step is performed on a wafer. Then, the wafer is rotated with an angle. A second deposition step is performed for completing the deposition. By the rotation of the wafer, the thin film is formed with a desired uniformity.

    摘要翻译： 公开了一种高密度等离子体化学气相沉积（HDPCVD）工艺。 首先，在晶片上进行第一沉积步骤。 然后，晶片以一定角度旋转。 执行第二沉积步骤以完成沉积。 通过晶片的旋转，以期望的均匀性形成薄膜。

    TIMING CONTROL CIRCUIT AND METHOD
    8.
    发明申请
    TIMING CONTROL CIRCUIT AND METHOD 审中-公开
    时序控制电路及方法

    公开(公告)号：US20060284663A1

    公开(公告)日：2006-12-21

    申请号：US11160232

    申请日：2005-06-15

    申请人： Chien-Hung Lu ,  Yi-Chiang Lai ,  Ho-Ming Su

    发明人： Chien-Hung Lu ,  Yi-Chiang Lai ,  Ho-Ming Su

    IPC分类号： H03H11/26

    CPC分类号： H03H11/26

    摘要： A timing control circuit and a timing control method are provided. The circuit and method is for outputting a plurality of latch pulses in a TFT-LCD to avoid a rewriting phenomenon. The timing control circuit is characterized in that among the latch pulses, except for the first latch pulse, each latch pulse synchronizes with or follows behind a previous latch pulse corresponding thereto, and at least one latch pulse falls behind a previous latch pulse corresponding thereto.

    摘要翻译： 提供了一种定时控制电路和定时控制方法。 该电路和方法用于在TFT-LCD中输出多个锁存脉冲以避免重写现象。 定时控制电路的特征在于，在锁存脉冲之外，除了第一锁存脉冲之外，每个锁存脉冲与对应于其的先前锁存脉冲同步或跟随，并且至少一个锁存脉冲落在与之对应的先前锁存脉冲之后。

    HDPCVD PROCESS AND METHOD FOR IMPROVING UNIFORMITY OF FILM THICKNESS
    10.
    发明申请
    HDPCVD PROCESS AND METHOD FOR IMPROVING UNIFORMITY OF FILM THICKNESS 有权
    HDPCVD方法和改善膜厚度均匀性的方法

    公开(公告)号：US20060063390A1

    公开(公告)日：2006-03-23

    申请号：US10711512

    申请日：2004-09-23

    申请人： Chien-Hung Lu ,  Chin-Ta Su

    发明人： Chien-Hung Lu ,  Chin-Ta Su

    IPC分类号： H01L21/469

    CPC分类号： C23C16/50 ,  C23C16/4584

    摘要： A high density plasma chemical vapor deposition (HDPCVD) process is disclosed. First, a first deposition step is performed on a wafer. Then, the wafer is rotated with an angle. A second deposition step is performed for completing the deposition. By the rotation of the wafer, the thin film is formed with a desired uniformity.

    摘要翻译： 公开了一种高密度等离子体化学气相沉积（HDPCVD）工艺。 首先，在晶片上进行第一沉积步骤。 然后，晶片以一定角度旋转。 执行第二沉积步骤以完成沉积。 通过晶片的旋转，以期望的均匀性形成薄膜。