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21 条记录 (耗时 0.015 秒)

    FAN
    1.
    发明申请
    FAN 有权
    风扇

    公开(公告)号：US20120301277A1

    公开(公告)日：2012-11-29

    申请号：US13472977

    申请日：2012-05-16

    申请人： Chih-Hsiang CHANG ,  Ding-Wei CHIU ,  Shih-Chou CHEN

    发明人： Chih-Hsiang CHANG ,  Ding-Wei CHIU ,  Shih-Chou CHEN

    IPC分类号： F04D29/66

    CPC分类号： F04D29/281 ,  F04D25/0613 ,  F04D29/30

    摘要： A fan includes a housing, an impeller and at least one position-limiting mechanism. The housing has an accommodating space for receiving the impeller. The impeller has a hub and a plurality of blades surrounding the hub. The position-limiting mechanism is located between the top of the blade and the inner side of the housing, and disposed on the top of the blade or the inner side of the housing.

    摘要翻译： 风扇包括壳体，叶轮和至少一个位置限制机构。 壳体具有容纳叶轮的容置空间。 叶轮具有轮毂和围绕轮毂的多个叶片。 位置限制机构位于叶片的顶部和壳体的内侧之间，并且设置在叶片的顶部或壳体的内侧。

    Fan
    2.
    发明授权
    Fan 有权
    风扇

    公开(公告)号：US09163640B2

    公开(公告)日：2015-10-20

    申请号：US13472977

    申请日：2012-05-16

    申请人： Chih-Hsiang Chang ,  Ding-Wei Chiu ,  Shih-Chou Chen

    发明人： Chih-Hsiang Chang ,  Ding-Wei Chiu ,  Shih-Chou Chen

    IPC分类号： F04D29/66 ,  F04D29/28 ,  F04D25/06 ,  F04D29/30

    CPC分类号： F04D29/281 ,  F04D25/0613 ,  F04D29/30

    摘要： A fan includes a housing, an impeller and at least one position-limiting mechanism. The housing has an accommodating space for receiving the impeller. The impeller has a hub and a plurality of blades surrounding the hub. The position-limiting mechanism is located between the top of the blade and the inner side of the housing, and disposed on the top of the blade or the inner side of the housing.

    摘要翻译： 风扇包括壳体，叶轮和至少一个位置限制机构。 壳体具有容纳叶轮的容置空间。 叶轮具有轮毂和围绕轮毂的多个叶片。 位置限制机构位于叶片的顶部和壳体的内侧之间，并且设置在叶片的顶部或壳体的内侧。

    VOLTAGE-CONTROLLED OSCILLATOR MODULE AND METHOD FOR GENERATING OSCILLATOR SIGNALS
    3.
    发明申请
    VOLTAGE-CONTROLLED OSCILLATOR MODULE AND METHOD FOR GENERATING OSCILLATOR SIGNALS 有权
    电压控制振荡器模块及产生振荡器信号的方法

    公开(公告)号：US20130241661A1

    公开(公告)日：2013-09-19

    申请号：US13558360

    申请日：2012-07-26

    申请人： Chih-Hsiang Chang ,  Nai-Chen Cheng ,  Yu Lee ,  Ching-Yuan Yang

    发明人： Chih-Hsiang Chang ,  Nai-Chen Cheng ,  Yu Lee ,  Ching-Yuan Yang

    IPC分类号： H03B5/12

    CPC分类号： H03B5/1212 ,  H03B5/1228 ,  H03B5/124 ,  H03B5/1243 ,  H03B5/1296 ,  H03B19/14 ,  H03B27/00 ,  H03B2200/004 ,  H03B2200/0078 ,  H03B2201/0208 ,  H03L7/24

    摘要： A voltage-controlled oscillator (VCO) module including a first VCO unit, a second VCO unit, and a matching circuit is provided. The first VCO unit includes a first terminal and a second terminal and generates a first oscillator signal. The second VCO unit is coupled to the first VCO unit and generates a second oscillator signal. The matching circuit is coupled between the first VCO unit and second VCO unit. The matching circuit includes a plurality of inductor modules respectively coupled between the first terminal of the first VCO unit and the second VCO unit, between the first terminal and the second terminal of the first VCO unit, and between the second terminal of the first VCO unit and the second VCO unit. Furthermore, a method for generating oscillator signals is also provided.

    摘要翻译： 提供了包括第一VCO单元，第二VCO单元和匹配电路的压控振荡器（VCO）模块。 第一VCO单元包括第一端子和第二端子，并产生第一振荡器信号。 第二VCO单元耦合到第一VCO单元并产生第二振荡器信号。 匹配电路耦合在第一VCO单元和第二VCO单元之间。 匹配电路包括分别耦合在第一VCO单元的第一端和第二VCO单元之间的多个电感器模块，位于第一VCO单元的第一端子和第二端子之间，并且在第一VCO单元的第二端子之间 和第二个VCO单元。 此外，还提供了一种用于产生振荡器信号的方法。

    FREQUENCY DOUBLER
    4.
    发明申请
    FREQUENCY DOUBLER 有权
    频率双打

    公开(公告)号：US20110175651A1

    公开(公告)日：2011-07-21

    申请号：US12789424

    申请日：2010-05-27

    申请人： Chih-Hsiang CHANG ,  Jung-Mao Lin ,  Ching-Yuan Yang

    发明人： Chih-Hsiang CHANG ,  Jung-Mao Lin ,  Ching-Yuan Yang

    IPC分类号： H03B19/06 ,  H03B19/00

    CPC分类号： H03B19/14

    摘要： A frequency doubler receiving an in-phase oscillating signal and an inverse oscillating signal and generating an output signal oscillating at a multiplied frequency, accordingly. The frequency doubler has a first transistor, a second transistor, a first inductor and a second inductor. A first terminal of the first transistor and a first terminal of the second transistor are at a common voltage. The frequency doubler receives the in-phase oscillating signal and the inverse oscillating signal via control terminals of the first and second transistors. The first and second inductors couple a second terminal of the first transistor and a second terminal of the second transistor to an output terminal of the frequency doubler, respectively. The first and second inductors may be separate inductance devices or, in another case, be implemented by a symmetric inductor.

    摘要翻译： 接收同相振荡信号的倍频器和反相振荡信号，并相应地产生以倍频振荡的输出信号。 倍频器具有第一晶体管，第二晶体管，第一电感器和第二电感器。 第一晶体管的第一端子和第二晶体管的第一端子处于公共电压。 倍频器通过第一和第二晶体管的控制端接收同相振荡信号和反相振荡信号。 第一和第二电感分别将第一晶体管的第二端子和第二晶体管的第二端子耦合到倍频器的输出端子。 第一和第二电感器可以是分离的电感器件，或者在另一种情况下可由对称电感器来实现。

    VOLTAGE CONTROLLED OSCILLATOR
    5.
    发明申请
    VOLTAGE CONTROLLED OSCILLATOR 有权
    电压控制振荡器

    公开(公告)号：US20110018645A1

    公开(公告)日：2011-01-27

    申请号：US12687891

    申请日：2010-01-15

    申请人： Chih-Hsiang Chang ,  Jung-Mao Lin ,  Ching-Yuan Yang

    发明人： Chih-Hsiang Chang ,  Jung-Mao Lin ,  Ching-Yuan Yang

    IPC分类号： H03B7/00 ,  H03B5/12

    CPC分类号： H03B5/1228 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1225 ,  H03B5/1253 ,  H03B5/1271 ,  H03B5/1296

    摘要： A voltage controlled oscillator (VCO) includes a voltage controlled current source (VCCS), a negative resistance circuit (NRC), a first transformer, a second transformer, a first transistor and a second transistor. A current terminal of the VCCS receives a control voltage. First terminals of first and second current paths in the NRC are coupled to a current terminal of the VCCS. Primary sides of the first and the second transformers are respectively coupled to second terminals of the first and the second current paths. Secondary sides of the first and the second transformers are first and second output terminals of the VCO, respectively. First terminals of the first and the second transistor are respectively coupled to the secondary sides of the first and the second transformers. Control terminals of the first and the second transformers are respectively coupled to the primary sides of the first and the second transformers.

    摘要翻译： 压控振荡器（VCO）包括压控电流源（VCCS），负电阻电路（NRC），第一变压器，第二变压器，第一晶体管和第二晶体管。 VCCS的电流端子接收控制电压。 NRC中的第一和第二电流路径的第一端子耦合到VCCS的电流端子。 第一和第二变压器的主侧分别耦合到第一和第二电流路径的第二端。 第一和第二变压器的次级侧分别是VCO的第一和第二输出端。 第一和第二晶体管的第一端分别耦合到第一和第二变压器的次级侧。 第一变压器和第二变压器的控制端子分别与第一变压器和第二变压器的一次侧接合。

    Hybrid Gap-fill Approach for STI Formation
    6.
    发明申请
    Hybrid Gap-fill Approach for STI Formation 审中-公开
    用于STI形成的混合间隙填充方法

    公开(公告)号：US20090127648A1

    公开(公告)日：2009-05-21

    申请号：US11969168

    申请日：2008-01-03

    申请人： Neng-Kuo Chen ,  Chih-Hsiang Chang ,  Cheng-Yuan Tsai ,  Wei-Chung Wang ,  Chun-Te Li

    发明人： Neng-Kuo Chen ,  Chih-Hsiang Chang ,  Cheng-Yuan Tsai ,  Wei-Chung Wang ,  Chun-Te Li

    IPC分类号： H01L23/58 ,  H01L21/762

    CPC分类号： H01L21/76232

    摘要： A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a first deposition step to fill a first dielectric material into the opening using a first deposition method. The first deposition method has a bottom deposition rate substantially greater than a sidewall deposition rate. The method further includes isotropically etching the first dielectric material, wherein at least a bottom portion of the first dielectric material remains after the etching; and performing a second deposition step to fill a remaining portion of the opening with a second dielectric material. The first deposition method may be a high-density plasma chemical vapor deposition. The second deposition method may be a high-aspect ratio process.

    摘要翻译： 提供了形成浅沟槽隔离区域的方法。 该方法包括：提供包括顶表面的半导体衬底; 形成从所述顶表面延伸到所述半导体衬底中的开口; 执行第一沉积步骤以使用第一沉积方法将第一介电材料填充到所述开口中。 第一沉积方法具有基本上大于侧壁沉积速率的底部沉积速率。 该方法还包括各向同性蚀刻第一介电材料，其中在蚀刻之后第一介电材料的至少底部部分保留; 以及执行第二沉积步骤以用第二电介质材料填充所述开口的剩余部分。 第一沉积方法可以是高密度等离子体化学气相沉积。 第二沉积方法可以是高纵横比法。

    Flexible display panel device
    7.
    发明申请
    Flexible display panel device 审中-公开
    灵活的显示面板装置

    公开(公告)号：US20080158498A1

    公开(公告)日：2008-07-03

    申请号：US11976680

    申请日：2007-10-26

    申请人： Chih-Hsiang Chang ,  Hsin-Hung Pan ,  Yung-Hui Yeh

    发明人： Chih-Hsiang Chang ,  Hsin-Hung Pan ,  Yung-Hui Yeh

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/133305

    摘要： A flexible display panel device includes a plastic substrate with a display region and a peripheral region, a plurality of ribs disposed in the peripheral region and/or the display region, a discontinuous buffer layer disposed on the plastic substrate, and an active matrix component layer on a pixel disposed on the discontinuous buffer layer. During the fabrication of the flexible panel, a plastic substrate is first disposed on a carrier substrate for performing device fabrication. After the panel is finished, the plastic substrate is departed from the carrier substrate to form a flexible panel. Through the integration design of the ribs and discontinuous buffer layer, the flexible panel has preferred warp resistance and low stress, thereby enhancing the reliability and life time of the panel.

    摘要翻译： 柔性显示面板装置包括具有显示区域和周边区域的塑料基板，设置在周边区域和/或显示区域中的多个肋，设置在塑料基板上的不连续缓冲层，以及有源矩阵部件层 在设置在不连续缓冲层上的像素上。 在柔性板的制造期间，首先将塑料基板设置在载体基板上以进行装置制造。 在面板完成之后，塑料基板离开载体基板以形成柔性板。 通过肋和不连续缓冲层的一体化设计，柔性板具有优选的经向阻力和低应力，从而增强了面板的可靠性和寿命。

    Method for forming high germanium concentration SiGe stressor
    9.
    发明授权
    Method for forming high germanium concentration SiGe stressor 有权
    形成高锗浓度SiGe应激源的方法

    公开(公告)号：US08623728B2

    公开(公告)日：2014-01-07

    申请号：US12831842

    申请日：2010-07-07

    申请人： Chih-Hao Chang ,  Jeff J. Xu ,  Chien-Hsun Wang ,  Chih Chieh Yeh ,  Chih-Hsiang Chang

    发明人： Chih-Hao Chang ,  Jeff J. Xu ,  Chien-Hsun Wang ,  Chih Chieh Yeh ,  Chih-Hsiang Chang

    IPC分类号： H01L21/336 ,  H01L21/31 ,  H01L21/469 ,  H01L21/00

    CPC分类号： H01L29/785 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/18 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/7848

    摘要： A method for producing a SiGe stressor with high Ge concentration is provided. The method includes providing a semiconductor substrate with a source area, a drain area, and a channel in between; depositing the first SiGe film layer on the source area and/or the drain area; performing a low temperature thermal oxidation, e.g., a high water vapor pressure wet oxidation, to form an oxide layer at the top of the first SiGe layer and to form the second SiGe film layer with high Ge percentage at the bottom of the first SiGe film layer without Ge diffusion into the semiconductor substrate; performing a thermal diffusion to form the SiGe stressor from the second SiGe film layer, wherein the SiGe stressor provides uniaxial compressive strain on the channel; and removing the oxide layer. A Si cap layer can be deposited on the first SiGe film layer prior to performing oxidation.

    摘要翻译： 提供了具有高Ge浓度的SiGe应激源的制造方法。 该方法包括：提供具有源极区域，漏极区域和沟道之间的半导体衬底; 在源极区域和/或漏极区域上沉积第一SiGe膜层; 进行低温热氧化，例如高水蒸气压湿氧化，以在第一SiGe层的顶部形成氧化物层，并在第一SiGe膜的底部形成具有高Ge百分比的第二SiGe膜层 Ge层扩散到半导体衬底中; 执行热扩散以从第二SiGe膜层形成SiGe应力源，其中SiGe应力源在通道上提供单轴压缩应变; 并除去氧化物层。 在进行氧化之前，可以在第一SiGe膜层上淀积Si覆盖层。