公开(公告)号：US06649936B1

公开(公告)日：2003-11-18

申请号：US09526150

申请日：2000-03-15

申请人： Chae Gee Sung ,  Jo Gyoo Chul ,  Makoto Sasaki ,  Kazuyuki Arai

发明人： Chae Gee Sung ,  Jo Gyoo Chul ,  Makoto Sasaki ,  Kazuyuki Arai

IPC分类号： H01L310392

CPC分类号： H01L27/124 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/66757

摘要： A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.

摘要翻译： 源极线直接连接到由薄膜晶体管衬底中的氧化铟锌构成的源极端子。 栅极线直接连接到由氧化铟锌构成的栅极端子。 或者，用于切换多个像素电极的薄膜晶体管的漏极直接连接到由氧化铟锌构成的像素电极。 这些配置不需要对于传统的薄膜晶体管衬底是必需的钝化膜，并且所得到的薄膜晶体管衬底可以通过减少数量的制造步骤来制造。

公开(公告)号：US06533965B1

公开(公告)日：2003-03-18

申请号：US09718982

申请日：2000-11-22

申请人： Makoto Sasaki ,  Chae Gee Sung ,  Kazuyuki Arai

发明人： Makoto Sasaki ,  Chae Gee Sung ,  Kazuyuki Arai

IPC分类号： H01B108

CPC分类号： C23C14/5806 ,  C03C17/2453 ,  C03C17/253 ,  C03C2217/211 ,  C03C2217/215 ,  C03C2217/216 ,  C03C2217/23 ,  C23C14/086 ,  C23C14/3414 ,  C23C30/00 ,  G02F1/13439 ,  H01B1/08

摘要： A transparent electrically conductive oxide film is composed of a compound oxide containing indium oxide, tin oxide, and zinc oxide and includes a connecting section, in which the tin content is higher than the zinc content at least in connecting section, and at least the connection section has crystallinity. Alternatively, in the transparent electrically conductive oxide film, the atomic percentage of zinc to the total of zinc, indium, and tin is in the range of about 1 at % through about 9 at %, the atomic ratio of tin to zinc is about 1 or more, the atomic percentage of tin to the total of zinc, indium, and tin is about 20 at % or less, and at least a portion thereof has crystallinity. An electronic apparatus provided with such a transparent electrically conductive oxide film as at least a portion of the electric circuit thereof, a target for forming a transparent electrically conductive oxide film, and a method for fabricating a substrate provided with a transparent electrically conductive oxide film are also disclosed.

摘要翻译： 透明导电氧化物膜由包含氧化铟，氧化锡和氧化锌的复合氧化物组成，并且包括至少在连接部分中锡含量高于锌含量的连接部分，并且至少连接 截面具有结晶度。 或者，在透明导电氧化物膜中，锌与锌，铟和锡的总量的原子百分比在约1at％至约9at％的范围内，锡与锌的原子比为约1 以上，锡与锌，铟和锡的合计的原子百分比为约20原子％以下，其至少一部分具有结晶性。 一种具有至少一部分电路的透明导电氧化膜的电子设备，形成透明导电氧化物膜的靶，以及具有透明导电氧化膜的基板的制造方法， 也披露。

公开(公告)号：US5311164A

公开(公告)日：1994-05-10

申请号：US959033

申请日：1992-10-08

申请人： Fujio Ikeda ,  Kazuyuki Arai

发明人： Fujio Ikeda ,  Kazuyuki Arai

IPC分类号： H02H5/04 ,  H01H37/76 ,  H01T1/14 ,  H01T4/12 ,  H02H9/04 ,  H02H9/06 ,  H05K1/02 ,  H05K3/34 ,  H01H83/00

CPC分类号： H02H9/042 ,  H05K1/0201 ,  H05K1/0257 ,  H01H2037/763 ,  H01H37/761 ,  H05K1/0259 ,  H05K1/026 ,  H05K2201/10181 ,  H05K2201/10583 ,  H05K2203/176 ,  H05K3/3442

摘要： A MELF (Metal Electrode Face Bonding Device) surge absorbing element which can be connected across a pair of input lines of an electronic device. The surge absorbing element is secured in electrical contact with the input lines by a conductive heat releasable adhering means, e.g., a solder. A spring is positioned in biased relationship against the surge absorbing element. When the surge absorbing element is subjected to overvoltages or overcurrents continuously across the input lines, the surge absorbing element heats up, which, in turn, heats the adhering means. When the temperature reaches a predetermined value, the adhering means releases its securement of the surge absorbing element, e.g., the solder melts, and no longer holds the element. When this occurs, the bias of the spring means positioned against the now unsecured surge absorbing element serves to move the element away from and out of electrical contact with the adhering means and, in turn, the input lines. This prevents further heating of the surge absorbing element.

摘要翻译： 一种可以连接在电子设备的一对输入线上的MELF（金属电极面接合装置）浪涌吸收元件。 浪涌吸收元件通过导电的可热释放的粘合装置（例如焊料）固定成与输入线电接触。 弹簧被定位成与浪涌吸收元件偏置的关系。 当浪涌吸收元件在输入线上连续地经受过电压或过电流时，浪涌吸收元件加热，这进而加热粘附装置。 当温度达到预定值时，粘附装置释放其浪涌吸收元件的固定，例如焊料熔化，并且不再保持元件。 当这种情况发生时，弹簧装置的偏置抵靠当前不安全的浪涌吸收元件的位置用于使元件远离和脱离与粘附装置的电接触，并且反过来使输入线移动。 这防止喘振吸收元件的进一步加热。

公开(公告)号：US5682687A

公开(公告)日：1997-11-04

申请号：US448103

申请日：1995-05-23

申请人： Kazuyuki Arai

发明人： Kazuyuki Arai

IPC分类号： A43B3/26 ,  A43B3/30 ,  A43B3/28

CPC分类号： A43B3/30 ,  A43B3/26

摘要： Stretchable shoes capable of being fixed without causing any stretch of the shoes once adjustment of a size thereof depending on a wearer is completed. Velcro-type hook and loop fasteners are arranged on a heel, so that a size of the shoes may be kept fixed once adjustment of the size is carried out, because engagement between the fasteners exhibits rigidity to a degree sufficient to substantially prevent release of the engagement. Also, the stretchable shoes permit adjustment of a size of the shoes to be readily accomplished by merely loosening a single countersunk screw kept tightened.

摘要翻译： 一旦可以根据使用者的尺寸进行调整，能够固定而不引起任何拉伸的鞋子的可拉伸鞋。 魔术贴式钩环紧固件布置在脚后跟上，使得一旦调整尺寸就可以保持固定鞋的尺寸，因为紧固件之间的接合呈现刚度达到足以基本上防止 订婚。 此外，可拉伸鞋允许通过仅松动保持紧固的单个埋头螺钉来调节鞋子的尺寸以容易地实现。

公开(公告)号：US06852998B2

公开(公告)日：2005-02-08

申请号：US10385377

申请日：2003-03-07

申请人： Chae Gee Sung ,  Jo Gyoo Chul ,  Makoto Sasaki ,  Kazuyuki Arai

发明人： Chae Gee Sung ,  Jo Gyoo Chul ,  Makoto Sasaki ,  Kazuyuki Arai

IPC分类号： G09F9/30 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/12

CPC分类号： H01L27/124 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/66757

摘要： A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.

摘要翻译： 源极线直接连接到由薄膜晶体管衬底中的氧化铟锌构成的源极端子。 栅极线直接连接到由氧化铟锌构成的栅极端子。 或者，用于切换多个像素电极的薄膜晶体管的漏极直接连接到由氧化铟锌构成的像素电极。 这些配置不需要对于传统的薄膜晶体管衬底是必需的钝化膜，并且所得到的薄膜晶体管衬底可以通过减少数量的制造步骤来制造。

公开(公告)号：US5198791A

公开(公告)日：1993-03-30

申请号：US829420

申请日：1992-02-03

申请人： Takashi Shibayama ,  Kazuyuki Arai ,  Fujio Ikeda

发明人： Takashi Shibayama ,  Kazuyuki Arai ,  Fujio Ikeda

IPC分类号： H02H9/06 ,  H01H37/76 ,  H01H85/36 ,  H01T1/14 ,  H01T4/12 ,  H02H9/04

CPC分类号： H01H85/36 ,  H01T1/14 ,  H01T4/12 ,  H02H9/042 ,  H01H2037/762 ,  H01H2037/768 ,  H01H37/761

摘要： The surge absorber having a surge absorbing element, and first and second wire means for electrically connecting the surge absorbing element across the input lines of an electronic device. The first and second wire means are connected to the surge absorber by conductive heat releasable means, for example, a low melting point solder. The second wire means includes a spring loaded member such that, on release of the first or second wire means by the first or second heat releasable means, respectively, by melting of the solder due to heat generated by the surge absorbing element, the surge absorbing element moves away from the first or second wire means. The surge absorber prevents an abnormal heating of the surge absorbing element when continuous overvoltages or overcurrents pass therethrough.

摘要翻译： 浪涌吸收器具有浪涌吸收元件，以及用于将电涌吸收元件跨过电子设备的输入线电连接的第一和第二电线装置。 第一和第二导线装置通过导电的可热释放装置例如低熔点焊料连接到浪涌吸收器。 第二导线装置包括弹簧加载构件，使得在分别由第一或第二可热释放装置释放第一或第二导线装置时，通过由浪涌吸收元件产生的热而熔化焊料，浪涌吸收 元件远离第一或第二线装置移动。 当连续过电压或过电流通过时，浪涌吸收器防止浪涌吸收元件的异常加热。