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    ACOUSTIC SENSOR AND FABRICATION METHOD THEREOF
    3.
    发明申请
    ACOUSTIC SENSOR AND FABRICATION METHOD THEREOF 有权
    声学传感器及其制造方法

    公开(公告)号：US20130100779A1

    公开(公告)日：2013-04-25

    申请号：US13557108

    申请日：2012-07-24

    申请人： Jae Woo LEE ,  Chang Han Je ,  Woo Seok Yang ,  Jong Dae Kim

    发明人： Jae Woo LEE ,  Chang Han Je ,  Woo Seok Yang ,  Jong Dae Kim

    IPC分类号： H04R17/00 ,  H04R31/00

    CPC分类号： H04R19/005 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/15151 ,  H04R19/04 ,  H04R31/00 ,  Y10T29/49005 ,  H01L2924/00014

    摘要： A method for fabricating an acoustic sensor according to an exemplary embodiment of the present disclosure includes: forming an acoustic sensor unit by forming a lower electrode on an upper portion of a substrate, forming etching holes on the lower electrode, forming a sacrifice layer on an upper portion of the lower electrode, and coupling a diaphragm to an upper portion of the sacrifice layer; coupling a lower portion of the substrate of the acoustic sensor unit to a printed circuit board on which a sound pressure input hole is formed so as to expose the lower portion of the substrate of the acoustic sensor unit to the outside through the sound pressure input hole; attaching a cover covering the acoustic sensor unit on the printed circuit board; etching the substrate of the acoustic sensor unit to form an acoustic chamber; and removing the sacrifice layer.

    摘要翻译： 根据本公开的示例性实施例的用于制造声学传感器的方法包括：通过在基板的上部形成下电极来形成声传感器单元，在下电极上形成蚀刻孔，在其上形成牺牲层 下部电极的上部，并且将隔膜连接到牺牲层的上部; 将声学传感器单元的基板的下部耦合到其上形成有声压输入孔的印刷电路板，以便通过声压输入孔将声学传感器单元的基板的下部暴露于外部 ; 将覆盖所述声学传感器单元的盖附着在所述印刷电路板上; 蚀刻声学传感器单元的基板以形成声学室; 并去除牺牲层。

    ACOUSTIC SENSOR AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    ACOUSTIC SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    声学传感器及其制造方法

    公开(公告)号：US20120098076A1

    公开(公告)日：2012-04-26

    申请号：US13012489

    申请日：2011-01-24

    申请人： Jaewoo LEE ,  Chang Han Je ,  Woo Seok Yang ,  Jongdae Kim

    发明人： Jaewoo LEE ,  Chang Han Je ,  Woo Seok Yang ,  Jongdae Kim

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： H04R31/00 ,  H04R19/005 ,  H04R19/02

    摘要： Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on a middle region of the bottom, the convex portion including a second hole on an edge region of the bottom; diaphragms facing the concave portion of the lower electrode, with a vibration space therebetween; diaphragm supporters provided on the lower electrode at a side of the diaphragm and having a top surface having the same height as the diaphragm; and an acoustic chamber provided in a space between the bottom portion and the sidewall portions below the lower electrode.

    摘要翻译： 提供了一种声学传感器。 声学传感器包括：基底，其包括侧壁部分和从侧壁部分的底部延伸的底部部分; 固定在所述基板上的下部电极，具有凹部和凸部，所述凹部包括在所述底部的中间区域的第一孔，所述凸部包括在所述底部的边缘区域上的第二孔; 隔膜面向下电极的凹部，其间具有振动空间; 隔膜支撑体设置在隔膜侧面的下电极上，具有与隔膜相同高度的顶表面; 以及设置在下部电极下方的底部和侧壁部之间的空间中的声学室。

    VERTICAL ACCELEROMETER
    5.
    发明申请
    VERTICAL ACCELEROMETER 有权
    垂直加速度计

    公开(公告)号：US20110138913A1

    公开(公告)日：2011-06-16

    申请号：US12783789

    申请日：2010-05-20

    申请人： Chang Han JE

    发明人： Chang Han JE

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125

    摘要： Provided is a vertical accelerometer for measuring acceleration applied perpendicular to a substrate to increase sensitivity thereof. The vertical accelerometer includes a substrate, and a plurality of unit vertical accelerometers, each having a detection mass disposed on the substrate to be rotated by acceleration applied perpendicular to the substrate, and a detection electrode formed at the detection mass. Here, the unit vertical accelerometers are provided to be in contact with the detection electrodes to detect the acceleration through variation in capacitance due to variation in area in which the contacted detection electrodes overlaps each other.

    摘要翻译： 提供了一种用于测量垂直于衬底施加的加速度以增加其灵敏度的垂直加速度计。 垂直加速度计包括基板和多个单元垂直加速度计，每个单元垂直加速度计具有设置在基板上的检测质量，以通过垂直于基板施加的加速度旋转，以及形成在检测质量处的检测电极。 这里，单位垂直加速度计被设置为与检测电极接触，以通过由于接触的检测电极彼此重叠的面积的变化而发生的电容变化来检测加速度。

    METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE
    6.
    发明申请
    METHOD OF FABRICATING MICRO-VERTICAL STRUCTURE 失效
    微观结构的制作方法

    公开(公告)号：US20100009514A1

    公开(公告)日：2010-01-14

    申请号：US12417114

    申请日：2009-04-02

    申请人： Myung Lae LEE ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

    发明人： Myung Lae LEE ,  Jong Hyun Lee ,  Sung Sik Yun ,  Dae Hun Jeong ,  Gunn Hwang ,  Chang Auck Choi ,  Chang Han Je ,  Jae Yong An

    IPC分类号： H01L21/306

    CPC分类号： B81C1/00619 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133

    摘要： A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

    摘要翻译： 提供一种制造微垂直结构的方法。 该方法包括通过插入绝缘层图案和空腔将第二晶体硅（Si）衬底接合到第一晶体Si衬底上，使用沿[111]晶体的深反应离子蚀刻（DRIE）工艺蚀刻第二晶体Si衬底 垂直于第二晶体Si衬底，并且使用结晶湿蚀刻工艺蚀刻第二晶体Si衬底的蚀刻垂直表面，以改善蚀刻垂直表面的表面粗糙度和平坦度。 结果，蚀刻的垂直表面上没有形成形态缺陷。 此外，由于绝缘层图案，在蚀刻终点处不发生基脚。 此外，微垂直结构不会浮在空气中，而是固定在第一晶体Si衬底上，从而有助于后续工艺。

    BIDIRECTIONAL READOUT CIRCUIT FOR DETECTING DIRECTION AND AMPLITUDE OF CAPACITIVE MEMS ACCELEROMETERS
    7.
    发明申请
    BIDIRECTIONAL READOUT CIRCUIT FOR DETECTING DIRECTION AND AMPLITUDE OF CAPACITIVE MEMS ACCELEROMETERS 有权
    用于检测电容式MEMS加速度计的方向和幅度的双向读出电路

    公开(公告)号：US20090056448A1

    公开(公告)日：2009-03-05

    申请号：US12168025

    申请日：2008-07-03

    申请人： Sung Sik LEE ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik LEE ,  Ji Man Park ,  Myung Lae Lee ,  Sung Hae Jung ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P13/04

    摘要： There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.

    摘要翻译： 提供了一种用于检测在电容式微机电系统（MEMS）加速度计处感测的振荡的方向和振幅的双向读出电路，双向读出电路通过使用高分辨率电容 - 电容将电容式MEMS加速度计的电容变化转换为时变量 时间转换技术，并且通过使用时间 - 数字转换（TDC）技术输出时间变化量作为振荡的方向和振幅，从而不仅检测振荡的振幅，而且检测其方向，这是能够 被应用于各种MEMS传感器。

    Micro piezoresistive pressure sensor and manufacturing method thereof
    8.
    发明授权
    Micro piezoresistive pressure sensor and manufacturing method thereof 有权
    微压阻式压力传感器及其制造方法

    公开(公告)号：US08261617B2

    公开(公告)日：2012-09-11

    申请号：US12745745

    申请日：2008-04-21

    申请人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    发明人： Chang Auck Choi ,  Chang Han Je ,  Gunn Hwang ,  Youn Tae Kim ,  Sung Hae Jung ,  Myung Lae Lee ,  Sung Sik Lee ,  Seok Hwan Moon

    IPC分类号： G01L9/06 ,  B23P17/04

    CPC分类号： G01L9/0042 ,  Y10T29/42 ,  Y10T29/49

    摘要： A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

    摘要翻译： 提供一种微型半导体型压力传感器及其制造方法。 微型半导体型压力传感器通过蚀刻衬底的空腔形成区域以形成多个沟槽来实现，通过热氧化工艺氧化多个沟槽以形成空腔形成氧化物层，形成膜 在形成空腔的氧化物层和衬底的上部上形成一层形成材料层，在膜形成材料层中形成多个蚀刻孔，通过多个蚀刻孔去除腔形成氧化物层，以形成埋入腔 在所述基板中，在所述膜形成材料层的上部形成膜增强层，以形成用于封闭所述空腔的膜，并且在所述膜的上部形成由压阻材料制成的敏感膜。

    CAPACITIVE ACCELEROMETER
    9.
    发明申请
    CAPACITIVE ACCELEROMETER 有权
    电容式加速度计

    公开(公告)号：US20100050771A1

    公开(公告)日：2010-03-04

    申请号：US12517068

    申请日：2007-12-05

    申请人： Chang-Han Je ,  Gunn Hwang ,  Sung-Hae Jung ,  Myung-Lae Lee ,  Chang-Auck Choi

    发明人： Chang-Han Je ,  Gunn Hwang ,  Sung-Hae Jung ,  Myung-Lae Lee ,  Chang-Auck Choi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125 ,  G01P15/0802

    摘要： A conventional capacitive accelerometer has a limitation in reducing a distance between a sensing electrode and a reference electrode, and requires a complex process and a separate method of correcting a clearance difference caused by a process error. However, the capacitive accelerometer of the present invention has high sensitivity, can be simply manufactured by maintaining a very narrow distance between a reference electrode and a sensing electrode, and can make it unnecessary to individually correct each manufactured accelerometer by removing or drastically reducing a functional difference due to a process error.

    摘要翻译： 常规的电容加速度计在减小感测电极和参考电极之间的距离方面具有局限性，并且需要一种复杂的过程和用于校正由过程误差引起的间隙差异的单独方法。 然而，本发明的电容加速度计具有高的灵敏度，可以通过在参考电极和感测电极之间保持非常窄的距离来简单地制造，并且可以使得不需要通过去除或大幅度地减少功能性来单独校正每个制造的加速度计 差异由于过程错误。

    VERTICAL ACCELERATION MEASURING APPARATUS
    10.
    发明申请
    VERTICAL ACCELERATION MEASURING APPARATUS 审中-公开
    垂直加速度测量装置

    公开(公告)号：US20090308160A1

    公开(公告)日：2009-12-17

    申请号：US12355644

    申请日：2009-01-16

    申请人： Chang Han Je ,  Chang Kyu Kim ,  Chang Auck Choi

    发明人： Chang Han Je ,  Chang Kyu Kim ,  Chang Auck Choi

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125

    摘要： Provided is a vertical acceleration measuring apparatus including a substrate; a plumb that is separated from the substrate to operate; a plurality of movable electrode plates that are formed at an upper end of the plumb in a predetermined direction; a movable electrode plate supporting portion that is formed at the upper end of the plumb and supports the movable electrode plates; a fixed body that is formed at an upper end of the substrate; a fixed electrode plate supporting portion that is coupled to the fixed body adjacent to the upper end of the plumb; a plurality of fixed electrode plates that are supported by the fixed electrode plate supporting portion and arranged to face the movable electrode plates in parallel; and a connection spring that connects the fixed body and the movable electrode plate supporting portion.

    摘要翻译： 提供一种包括基板的垂直加速度测量装置; 与基板分离的铅垂操作; 多个可动电极板，其沿预定方向形成在铅垂的上端; 可动电极板支撑部分，其形成在铅垂的上端并支撑可动电极板; 形成在所述基板的上端的固定体; 固定电极板支撑部，其与所述固定体联接，所述固定体邻近所述铅垂的上端; 多个固定电极板，由固定电极板支撑部支撑并平行地面对可动电极板; 以及连接固定体和可动电极板支撑部的连接弹簧。